DPAD50
Abstract: SSTDPAD100 dpad1
Text: DPAD/SSTDPAD Series Dual Low-Leakage Pico-Amp Diodes DPAD1 DPAD5 DPAD50 SSTDPAD5 SSTDPAD100 Product Summary Part Number IR Max pA DPAD1 –1 DPAD5/SSTDPAD5 –5 DPAD50 –50 SSTDPAD100 –100 Features Benefits Applications D Ultralow Leakage: DPAD1 <1 pA
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Original
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DPAD50
SSTDPAD100
SSTDPAD5/SSTDPAD100
S-52424--Rev.
14-Apr-97
DPAD50
SSTDPAD100
dpad1
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PDF
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2N4858A
Abstract: 2N4856A 4857A 2N4857A Siliconix JFET Duals
Text: 2N4856A/4857A/4858A N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A –4 to –10 –40 50 25 5 4 2N4857A –2 to –6 –40 20 40 5 4 2N4858A –0.8 to –4 –40
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Original
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2N4856A/4857A/4858A
2N4856A
2N4857A
2N4858A
2N4856A
S-52424--Rev.
14-Apr-97
2N4858A
4857A
2N4857A
Siliconix JFET Duals
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PDF
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TN2010T
Abstract: No abstract text available
Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
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Original
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TN2010T
O-236
OT-23)
S-52426--Rev.
14-Apr-97
TN2010T
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PDF
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2410l
Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410
Text: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features
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Original
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ND2406L/2410L,
BSS129
ND2406L
ND2410L
O-226AA
O-226AA)
S-52426--Rev.
14-Apr-97
2410l
ND2406
ND2410L
BSS129
ND2406L
2410* mosfet
nd2410
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PDF
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TN2010T
Abstract: Marking Code For TN2010 R1 MARKING CODE
Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
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Original
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TN2010T
O-236
OT-23)
18-Jul-08
TN2010T
Marking Code For
TN2010
R1 MARKING CODE
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PDF
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2N3819 equivalent
Abstract: transistor 2N3819 2N3819
Text: 2N3819 N-Channel JFET Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 Features Benefits Applications D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation
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Original
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2N3819
2N3819
S-52424--Rev.
14-Apr-97
2N3819 equivalent
transistor 2N3819
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PDF
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2N5432
Abstract: 2N5434 5433 2N5433
Text: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D
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Original
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2N5432/5433/5434
2N5432
2N5433
2N5434
2N5432
Descri10
S-52424--Rev.
2N5434
5433
2N5433
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PDF
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Untitled
Abstract: No abstract text available
Text: VCR2N/4N/7N JFET Voltage-Controlled Resistors Product Summary Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 Features Benefits Applications D Continuous Voltage-Controlled Resistance
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Original
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S-52424--Rev.
14-Apr-97
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PDF
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J108
Abstract: SST108 sot-23 JFET J109 J110 SST109 SST110
Text: J/SST108 Series N-Channel JFETs J108 J109 J110 SST108 SST109 SST110 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 –3 to –10 8 20 4 J/SST109 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 Features
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Original
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J/SST108
SST108
SST109
SST110
J/SST108
J/SST109
J/SST110
J108
SST108
sot-23 JFET
J109
J110
SST109
SST110
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PDF
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U401
Abstract: U406 SST404 SST406 U404
Text: SST/U401 Series Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) U401 –0.5 to –2.5 –40 1 –2 5 SST/U404 –0.5 to –2.5 –40 1
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Original
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SST/U401
SST404
SST406
SST/U404
SST/U406
S-52424--Rev.
14-Apr-97
U401
U406
SST404
SST406
U404
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PDF
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BS250
Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Text: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T
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Original
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TP0610L/T,
VP0610L/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
BS250
mosfet bs250
VP0610T
TP0610L
TP0610T
VP0610L
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PDF
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Untitled
Abstract: No abstract text available
Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V
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Original
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TN0201L/0401L,
VN0300L/M
TN0201L
TN0401L
VN0300L
VN0300M
O-226AA)
S-52426--Rev.
14-Apr-97
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PDF
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Siliconix J310
Abstract: SST310 Siliconix N-Channel JFETs U309 J308 J309 J310 SST308 SST309 U310
Text: J/SST/U308 Series N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 J309 –1 to –4 –25 8 12 –25 10 12 J310 –2 to –6.5 –25 8 24
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Original
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J/SST/U308
SST308
SST309
SST310
S-52424--Rev.
14-Apr-97
Siliconix J310
SST310
Siliconix N-Channel JFETs
U309
J308
J309
J310
SST308
SST309
U310
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PDF
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741J
Abstract: No abstract text available
Text: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4
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OCR Scan
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J/SST/U308
SST308
SST309
SST310
S-52424--Rev.
14-Apr-97
S-52424--
741J
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PDF
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TN0200T
Abstract: No abstract text available
Text: Tem ic TN0200T/TS Semiconductors N-Channel Enhancement-Mode MOSFET Product Summary I d A r DS(on) (Q ) TN0200T TN0200TS 0.4 @ VGs = 4.5 V 0.73 1.2 0.5 @ Vos = 2.5 V 0.65 1.1 V d s (V ) 20 Features Benefits • • • • • • • • • • Low On-Resistance: 0.29 Q
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OCR Scan
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TN0200T/TS
TN0200T
TN0200TS
O-236
S-52426--Rev.
14-Apr-97
TN0200T
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PDF
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CR390
Abstract: No abstract text available
Text: Tem ic CR160 Series S e m i c o n d u c t o r s Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 Product Summary T y p ip mA M in P o v (V) Part Number Typ Ip (mA) Min P o v (V) CR160 1.60 100 CR300 3.00 100
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OCR Scan
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CR160
CR220
CR300
CR390
CR180
CR240
CR330
CR430
CR200
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PDF
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High-Speed Analog N-Channel DMOS FETs -TO-72
Abstract: sd5000 sd5000 series 51850
Text: T em ic SD5000/5400 Series Semiconductors N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary P a rt N um ber V BR DS M in (V ) VGS(th) M a x (V) rDscon) M a x (Q ) Crss M a x (p F ) tON M a x (ns) SD5000I 20 1.5 70 @ VGs = 5 V
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OCR Scan
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
High-Speed Analog N-Channel DMOS FETs -TO-72
sd5000
sd5000 series
51850
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PDF
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GR-1217-CORE
Abstract: No abstract text available
Text: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . 2 R E L E A S E D FO R P U B LIC A T IO N L0C ALL RIGHTS R ESER VED . CO PYRIG H T REVISION S D IS T H D E S C R IP T IO N REVISED PER E C O - 1 1 - 0 0 5 0 3 3 A RK HMR 29M AR1 D D A A A A a fl — A xxxx R h nI A T
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OCR Scan
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-10x2
27jum
14APR97
GR-1217-CORE
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PDF
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TN2010
Abstract: No abstract text available
Text: Temic TN2010T S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) rDS(on) 200 Max (Q) 11 Features V G S< th)(V ) ID (A) 0.8 to 3.0 0,12 Benefits Low On-Resistance: 9.5 Q Secondary Breakdown Free: 220 V
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OCR Scan
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TN2010T
2010T
S-52426--
14-Apr-97
TN2010
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic VQ3001J/3001P S e m i c o n d u c t o r s N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS M in (V ) r o s i » ) M a x (fi) V e s o u ) (V ) I d (A ) N -Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Chan nel -3 0 2 @ V Gs = - 1 2 V
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OCR Scan
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VQ3001J/3001P
S-52426--
14-Apr-97
S-52426--Rev.
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic DPAD/SSTDPAD Series S e m i c o n d u c t o r s Dual Low-Leakage Pico-Amp Diodes DPAD1 DPAD5 DPAD50 SSTDPAD5 SSTDPAD100 Product Summary Part Number I r Max pA DPAD I -1 DPAD5/SSTDPAD5 -5 DPAD50 -5 0 SST D PA D Î00 -1 0 0 Features Benefits Applications
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OCR Scan
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DPAD50
SSTDPAD100
DPAD5/DPAD50
SSTDPAD5/SSTDPAD100
S-52424--
14-Apr-97
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PDF
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52426
Abstract: No abstract text available
Text: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M
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OCR Scan
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TN0601L,
VN0606L/M,
VN66AFD
TN0601L
VN0606L
VN0606M
VN66AFD
O-237
O-226AA,
O-237)
52426
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PDF
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4856a
Abstract: 2n4856a 2N485
Text: Tem ic 2N4856A/4857A/4858A S e m i c o n d u c t ors N-Channel JFETs Product Summary Part Number VQS off 2N4856A - 4 to - 10 -4 0 50 25 5 4 2N4857A - 2 to - 6 -4 0 20 40 5 4 2N 4858A -0 .8 to - 4 -4 0 8 60 5 4 (V) loss Min (mA) V(BR)GSS Min (V) Features iDSjon) Max
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OCR Scan
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2N4856A/4857A/4858A
2N4856A
2N4857A
S-52424--
l4-Apr-97
S-52424--Rev.
14-Apr-97
4856a
2N485
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PDF
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DD510
Abstract: 211DE SD211 SOT-143 D5
Text: Tem ic SD211DE/SST211 Series S e m i c o n d u c t o r s N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VcS(th) Max (V) SD2UDE 30 1.5 45 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V 0.5 2 SD215DE
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OCR Scan
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SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST21I
SST213
SST215
SST211
DD510
211DE
SD211
SOT-143 D5
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PDF
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