149 VARIABLE CAPACITANCE DIODE Search Results

149 VARIABLE CAPACITANCE DIODE Result Highlights (5)

Part	Manufacturer	Description
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC355DD7LQ224KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

149 VARIABLE CAPACITANCE DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
diode MARKING CODE P9 Abstract: BB159 marking code p9 Text: LESHAN RADIO COMPANY, LTD. UHF variable capacitance diode BB 149 DESCRIPTION The BB149 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct	Original	BB149 OD323 BB159 diode MARKING CODE P9 marking code p9	PDF
Design with PIN diode limiter alpha Abstract: pin diode limiter 3 ghz 1 watt st 4606 microwave limiter passive low pass filter at 60 ghz CLA4603 CMB7602 4606 chip Alpha Industries pin diodes Text: Limiter Diodes CLA Series Features Low Loss 4 kW Coarse Limiters 210 4 240 200 Watt Midrange Limiters 10 mW Clean–Up Limiters Description Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design through epitaxy to the finished device, are specifically	Original	CLA4603 CLA4606, CLA4607 Design with PIN diode limiter alpha pin diode limiter 3 ghz 1 watt st 4606 microwave limiter passive low pass filter at 60 ghz CMB7602 4606 chip Alpha Industries pin diodes	PDF
Untitled Abstract: No abstract text available Text: BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C	Original	BAS16HT1 OD-323	PDF
Untitled Abstract: No abstract text available Text: BAT54HT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where	Original	BAT54HT1	PDF
mallory 150 series Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	Inte153 MRF20030R mallory 150 series	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030	PDF
BD136 Abstract: MJD47 MRF20030R Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030R/D MRF20030R BD136 MJD47 MRF20030R	PDF
Motorola 946 Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this	Original	MRF20030R/D MRF20030R Motorola 946 MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier	Original	MRF20030R/D MRF20030R	PDF
STP4119 Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices	Original	SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a	PDF
1SV149 Abstract: No abstract text available Text: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation	OCR Scan	1SV149 1SV149	PDF
1SV149 Abstract: No abstract text available Text: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V	OCR Scan	1SV149 1SV149	PDF
BA102 diode Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A Text: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï	OCR Scan	Tamb25Â BA102 BA102 diode BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A	PDF

pj 69 diode Abstract: varicap 1sv149 varicap diodes 1SV101 equivalent Text: 6. DIODES FOR USE AT HIGHFREQUENCIES 2 E quivalent C ircuit Figure 6.2 show s a varicap diode expressed by its equivalent circuit. 6.1 V ariable C apacitance D iode V ariable capacitance diodes are g enerally called varicap diodes. R ectifiers and sw itching diodes use	OCR Scan		PDF
CS 5609 Abstract: 1sv149 st 9618 1SV149-C SB 8712 Text: 1SV 149 TOSHIBA SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C iy/C 8V = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V a 5 5 MAX. CHARACTERISTIC Reverse Voltage	OCR Scan	1SV149 CS 5609 1sv149 st 9618 1SV149-C SB 8712	PDF
rohm mtbf Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861	PDF
zt158 Abstract: BD 149 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	IS22I MRF20030 zt158 BD 149 transistor	PDF
DBT134 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this	OCR Scan	MRF20030R/D DBT134	PDF
tda 2038 Abstract: TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960 Text: Philips Semiconductors Selection guide Alphanumerical index ALPHANUMERICAL INDEX PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; l2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; l2C-bus 44 50 83C654 CMOS single-chip 8-blt microcontroller; l2C-bus	OCR Scan	80C528; 83C528 80C652; 83C652 83C654 83CE654 84C44X; 84C64X; 84C84X 87C528 tda 2038 TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960	PDF
LM349 Abstract: LM1149 lm148j883 LM348 ci lm 741 Lm 1297 KE4393 op amp ic 741 LM op amp amplifier LM 741 Text: LM148/LM149 Series Quad 741 Op Amp LM148/LM248/LM348 Quad 741 Op Amps LM149/LM349 Wide Band Decompensated Av (min = 5) General Description Features The LM148 series is a true quad 741. It consists of tour independent, high gain, internally compensated, low power	OCR Scan	148/LM149/LM248/LM348/LM349 LM148/LM149 LM148/LM248/LM348 LM149/LM349 LM148 KE4393, P1087E, 1N914 LM148/LM149/LM248/LM348/LM349 LM148, LM349 LM1149 lm148j883 LM348 ci lm 741 Lm 1297 KE4393 op amp ic 741 LM op amp amplifier LM 741	PDF
TDA2658 Abstract: BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide Text: Philips Semiconductors Selection guide Functional index PAGE TUNING/TUNER Tuning SAB6456; SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler 1347 SAB8726 Sensitive 2.6 GHz divide-by-2 prescaler 1353 TOA8725T Antenna signal processor 3785	OCR Scan	SAB6456; SAB6456T SAB8726 OA8725T TSA5511 TSA5512 TSA5514 TSA5515T TSA5520; TSA5521 TDA2658 BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide	PDF
bd135 equivalent Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006	PDF
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3	PDF

149 VARIABLE CAPACITANCE DIODE Search Results

149 VARIABLE CAPACITANCE DIODE Result Highlights (5)

149 VARIABLE CAPACITANCE DIODE Datasheets Context Search

diode MARKING CODE P9

Design with PIN diode limiter alpha

Untitled

Untitled

mallory 150 series

BD135

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

BD136

Motorola 946

Untitled

STP4119

1SV149

1SV149

BA102 diode

pj 69 diode

CS 5609

rohm mtbf

zt158

DBT134

tda 2038

LM349

TDA2658

bd135 equivalent

bd136 equivalent