1461 TRANSISTOR Search Results

1461 transistor

Abstract: 1461 TELEDYNE 1461
Contextual Info: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output

TELEDYNE 1461

Abstract: TELEDYNE+1461
Contextual Info: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to

LMH6321TS-EVAL

Abstract: 1461 transistor AN-1461 LM321 LM8261 LMH6321 an-1461 national
Contextual Info: National Semiconductor Application Note 1461 November 2006 General Description characterization. Both boards have identical circuit configurations and are designed for either inverting or non-inverting gain. The evaluation board schematic is shown in Figure 1. The

LMH6321

Abstract: LM8261 AN-1461 LM321 LMH6321TS-EVAL 2019.0002
Contextual Info: National Semiconductor Application Note 1461 June 2006 General Description characterization. Both boards have identical circuit configurations and are designed for either inverting or non-inverting gain. The LMH6321MR-EVAL for the 8-Pin PSOP type package

1461 smd

Abstract: D1207 MSK1461 MSK1461B MSK1461E
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. HIGH SPEED/VOLTAGE OP AMP 1461 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown Large Gain-Bandwidth Product

RFP12N18

Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
Contextual Info: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds

A19 SMD transistor

Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown

vmos fet

Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions

MAX4526

Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Contextual Info: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and

I2C and SPI/QSPI/MICROWIRE

Abstract: MAX4526 MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Contextual Info: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and

Contextual Info: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions

Contextual Info: 19-1461; Rev 0; 4/99 Se ria lly Cont rolle d, Clic k le ss Audio/Vide o Sw it c he s The MAX4562/MAX4563 serial-interfac e c ontrolled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and

MAX4526

Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Contextual Info: 19-1461; Rev 0; 4/99 概要 _ 特長 _ MAX4562/MAX4563はマルチメディアアプリケー ションに最適のシリアルインタフェース制御スイッチ です。各デバイスは、オン抵抗 RON 30Ω(max)、RON

Contextual Info: MIL-PRF-3 8 5 3 4 C ERTIFIED M .S.KEN NED Y C ORP. 1461 HIGH SPEED/V OLT A GE OP A MP 4 7 0 7 D e y Road Liv erpool, N. Y . 1 3 0 8 8 3 1 5 7 0 1-6 7 5 1 FE A T URES: Ex tremely F ast - 5 0 0 v/µS W ide Supply Range ± 1 5 V to ± 4 5 V V M OS Output, No Secondary Breakdo w n

74HC9046

Abstract: 74hct4050 74HC273 CMOS TTL Logic Family Specifications 74hc245 74HCT297 74hc154 application 74hct133 74hc297 application notes 74HC7014 74HCT299
Contextual Info: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 INTEGRATED CIRCUITS DATA SHEET Package outline drawings January 1996 File under Integrated Circuits, IC06 Philips Semiconductors

TDA2050

Abstract: TDA2050 pin layout tda 1040 application tda2050 TDA2050 audio circuit Tda 2050
Contextual Info: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■

sk1461

Abstract: sk 100 transistor
Contextual Info: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input

tda2050

Contextual Info: TDA2050 32 W hi-fi audio power amplifier Features • High output power 50 W music power IEC 268.3 rules ■ High operating supply voltage (50 V) ■ Single or split supply operations ■ Very low distortion ■ Short-circuit protection (OUT to GND) ■

ah30 diode

Abstract: AH34 mosfet ak24 diode thermistor M33 irf7832 ISL62882 n34 transistor w8 mosfet transistor c36 Burndy y34 lug specifications
Contextual Info: ISL62882EVAL2Z User Guide Application Note April 9, 2009 AN1461.0 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5

fairchild AG33

Abstract: K30 mosfet rPGA-989 transistor r14 ah16 MPCh1040LR36 r33 ah16 burndy Y35 ONSEMI diode a30 K34 mosfet K26 mosfet
Contextual Info: ISL62882EVAL2Z User Guide Application Note July 13, 2009 AN1461.1 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5

IS955

Abstract: marking Y24 2SA1461 2SC3734 marking 2 AW
Contextual Info: NEC / ELECTRON DEVICE j SILICON TRANSISTOR / _ _ . _ . _ . 2SA1461 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed Switching: t stg = 110 ns 2.8 ± 0.2 • High Gain Bandwidth Product : f j = 5 1 0 M H z

j139

Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Contextual Info: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

482 transistor

Abstract: transistor f 482
Contextual Info: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing