Untitled
Abstract: No abstract text available
Text: VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode
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VS-MURD620CTPbF
O-252AA)
2002/95/EC
J-STD-020,
VS-MURD620CTPbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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SiZ900DT
2002/95/EC
SiZ900DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a
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SiZ904DT
2002/95/EC
SiZ904DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VS-6CWH02FNPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode
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VS-6CWH02FNPbF
O-252AA)
2002/95/EC
J-STD-020,
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BAS86-M Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86-M
AEC-Q101
2002/95/EC
2002/96/EC
OD-80
11-Mar-11
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BAT86
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
BAT86
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Untitled
Abstract: No abstract text available
Text: VSKDS409/150 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • • • • • • 175 °C TJ operation Low forward voltage drop High frequency operation Low thermal resistance Compliant to RoHS Directive 2002/95/EC
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VSKDS409/150
2002/95/EC
VSKDS409/150
11-Mar-11
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V15X5ZT
Abstract: No abstract text available
Text: V5X5Z, V15X5Z Z-Foil Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Chip Resistors for Use in Hybrid Circuits with TCR of 0.05 ppm/°C, Tolerance to 0.005 %, and Load Life Stability of ± 0.01 % for 10 000 h FIGURE 1 - TRIMMING CHIP RESISTORS
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V15X5Z
V15X5Z
27-Apr-11
V15X5ZT
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311E-15
Abstract: 8082 8-PIN
Text: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V
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SiZ916DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
311E-15
8082 8-PIN
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Untitled
Abstract: No abstract text available
Text: V5X5P, V15X5P, V15X10P Vishay Foil Resistors Bulk Metal Foil Technology Discrete Chips with TCR of 2 ppm/°C, Tolerance to 0.005 %, and Load Life Stability of ± 0.01 % for 10 000 h for use in Hybrid Circuits FIGURE 1 - TRIMMING CHIP RESISTORS V5X5P Trim Points
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V15X5P,
V15X10P
V15X5P
V15X5P
V15X10P
27-Apr-2011
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Untitled
Abstract: No abstract text available
Text: BAS86-M Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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Original
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PDF
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BAS86-M
AEC-Q101
2002/95/EC
2002/96/EC
OD-80
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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PDF
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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VS-HFA04SD60
Abstract: VS-HFA04SD60SPbF
Text: VS-HFA04SD60SPbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES 2, 4 1 N/C D-PAK TO-252AA • • • • • • • • 3 Anode Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating temperature
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VS-HFA04SD60SPbF
2002/95/EC
J-STD-020,
O-252AA)
18-Jul-08
VS-HFA04SD60
VS-HFA04SD60SPbF
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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SiZ900DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V
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SiZ920DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ902DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a 0.0064 at VGS = 10 V 16a 0.0083 at VGS = 4.5 V
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SiZ902DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Y4033
Abstract: V15X5ZT
Text: V5X5Z, V15X5Z Z-Foil Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Chip Resistors for Use in Hybrid Circuits with TCR of 0.05 ppm/°C, Tolerance to 0.005 %, and Load Life Stability of ± 0.01 % for 10 000 h FIGURE 1 - TRIMMING CHIP RESISTORS
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V15X5Z
22-Feb-10
Y4033
V15X5ZT
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V 28a 13.5 nC
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SiZ900DT
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a
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SiZ904DT
2002/95/EC
SiZ904DT-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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Original
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SiZ900DT
2002/95/EC
SiZ900DT-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-6CWH02FNPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode
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Original
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PDF
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VS-6CWH02FNPbF
O-252AA)
2002/95/EC
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating: 250 W High overload capability up to 4 times nominal power see energy curve Easy mounting Low thermal radiation of the case
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2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: RPS 250 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating: 250 W High overload capability up to 4 times nominal power see energy curve Easy mounting Low thermal radiation of the case
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2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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SiZ900DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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