Si7414DN SPICE Device Model
Abstract: SI7414DN
Text: SPICE Device Model Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7414DN
18-Jul-08
Si7414DN SPICE Device Model
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195D
Abstract: No abstract text available
Text: 195D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Conformal Coated FEATURES • 8 mm, 12 mm Tape Packaging to EIA-481-1 reeling per IEC 286-3. 7’ 178 mm standard 13" (330 mm) available • US and European case sizes available PERFORMANCE CHARACTERISTICS
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EIA-481-1
08-Apr-05
195D
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572D
Abstract: No abstract text available
Text: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • P case offers single-sided lead Pb -free terminations • Wraparound lead (Pb)-free terminations: Q, S, A, B and T • • P case top P case
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EIA-481-1
08-Apr-05
572D
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60175
Abstract: SI5944DU
Text: Si5944DU New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES rDS(on) (W) ID (A) 0.112 at VGS = 10 V 6a 0.171 at VGS = 4.5 V 4.9 Qg (Typ) 2 2 nC 2.2 PowerPAKr ChipFETr Dual D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5944DU
Si5944DU-T1
08-Apr-05
60175
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Si4447DY
Abstract: 60178 w188
Text: Si4447DY New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –40 40 rDS(on) (W) ID (A) 0.054 at VGS = –10 V –4.5 0.072 at VGS = –4.5 V D TrenchFETr Power MOSFET D 100 % Rg Tested D UIS Tested Qg (Typ) –3.9 COMPLIANT
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Si4447DY
08-Apr-05
60178
w188
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TSOP381
Abstract: TSOP38130 TSOP38133 TSOP38136 TSOP38137 TSOP38138 TSOP38140 TSOP38156
Text: TSOP381. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP381. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP381.
D-74025
13-Feb-06
TSOP381
TSOP38130
TSOP38133
TSOP38136
TSOP38137
TSOP38138
TSOP38140
TSOP38156
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Si4559ADY
Abstract: MOSFET 719
Text: SPICE Device Model Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4559ADY
S-60180Rev.
13-Feb-06
MOSFET 719
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Si7458DP
Abstract: No abstract text available
Text: SPICE Device Model Si7458DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7458DP
18-Jul-08
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S6018
Abstract: SI4559ADY
Text: SPICE Device Model Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4559ADY
18-Jul-08
S6018
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Si7434DP
Abstract: No abstract text available
Text: SPICE Device Model Si7434DP Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7434DP
18-Jul-08
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Si6562DQ SPICE Device Model
Abstract: Si6562DQ
Text: SPICE Device Model Si6562DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6562DQ
18-Jul-08
Si6562DQ SPICE Device Model
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Si7446BDP
Abstract: No abstract text available
Text: SPICE Device Model Si7446BDP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7446BDP
18-Jul-08
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Si5402BDC
Abstract: No abstract text available
Text: SPICE Device Model Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5402BDC
18-Jul-08
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Si5406DC
Abstract: No abstract text available
Text: SPICE Device Model Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5406DC
18-Jul-08
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Si7402DN
Abstract: V537
Text: SPICE Device Model Si7402DN Vishay Siliconix Dual N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7402DN
18-Jul-08
V537
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Si6933DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6933DQ
18-Jul-08
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Si6966DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6966DQ
18-Jul-08
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Si7802DN
Abstract: No abstract text available
Text: SPICE Device Model Si7802DN Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7802DN
18-Jul-08
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Si6955ADQ
Abstract: No abstract text available
Text: SPICE Device Model Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6955ADQ
18-Jul-08
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17105-3608
Abstract: tyco 17105-3608 342185-1
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT AMP 1471-9 REV 31MAR2000 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. - ,— 2 1 LOC G DIST REV IS IO N S 02 LTR DESCRIPTION R1 DATE 13FEB06 REV PER ECR—0 6 —001 930 1 WIRE SIZE
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31MAR2000
13FEB06
6-342185-BY
02DEC05
17105-3608
tyco 17105-3608
342185-1
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OF IC 7270
Abstract: No abstract text available
Text: 4 AMP 1471 - 9 REV 31MAR2000 3 2 LOC R E V IS IO N S D IS T AD 00 DESCRIPTIO N N' +.002 E C O —0 5 —7 4 8 1 13FEB06 MB JO if D C REF X — S E C T IO N FINISH OVER BRIGHT TIN A FINISH GOLD INDICATED LEAD O VER OVER OVER .0 0 0 0 5 0 AREA: NICKEL. .0 0 0 0 1 5
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31MAR2000
13FEB06
OF IC 7270
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 — LOC ALL RIGHTS RESERVED. G DIST R EVIS IO N S 02 LTR G2 D DESCRIPTION DATE REV PER ECR —06 —001 9 30 1 WIRE INSULATION 2\ SUPERSEDED 13FEB06
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13FEB06
07AUG03
30AUG05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC A L L RIGHTS RESERVED. R E V IS IO N S DIST 16 CE LTR A DESCRIPTIO N DATE DWN 13FEB06 NEW RELEASE APVD JWD JB ! A MAXIMUM INSERTION LOSS IS 0.5dB PLUS CABLE
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13FEB06
1300nm
50/125um
31MAR2000
07MAR06
us040969
1\bin\6588930-c
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Untitled
Abstract: No abstract text available
Text: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FOR A LL CO P Y R IG H T B Y TYCO E LE C TR O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A TIO N . S T UD AMP 1 4 7 1 -9 REV 3 1 M A R 2 0 0 0 1 2 LOC G D IS T R E V IS IO N S 02 LTR
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13FEB06
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