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    136 8PIN Search Results

    136 8PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2766T1A-E2-AY Renesas Electronics Corporation Nch Single Power Mosfet 30V 130A 0.88Mohm 8Pin HVSON (6051) Visit Renesas Electronics Corporation
    UPA2812T1L-E2-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -30A 4.8Mohm 8Pin HVSON (3333) Visit Renesas Electronics Corporation
    UPA2764T1A-E2-AY Renesas Electronics Corporation Nch Single Power Mosfet 30V 130A 1.10Mohm 8Pin HVSON (6051) Visit Renesas Electronics Corporation
    UPA2739T1A-E2-AY Renesas Electronics Corporation Pch Single Power Mosfet -30V -85A 2.8Mohm 8Pin HVSON (6051) Visit Renesas Electronics Corporation
    UPA2813T1L-E2-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -27A 6.2Mohm 8Pin HVSON (3333) Visit Renesas Electronics Corporation

    136 8PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IQEXO-3C

    Abstract: iqpxo X708A X704A X701A KSS-EXO-3C/16.384 8640AN 8640BN 8640CN S601A
    Text: PROGRAMMABLE OSCILLATORS - Section Contents Stock Programmable Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 IQEXO-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138


    Original     		IQPXO-8600 IQEXO-3C iqpxo X708A X704A X701A KSS-EXO-3C/16.384 8640AN 8640BN 8640CN S601A PDF

    S-0141

    Abstract: 277h S-5412 a 1515 beau W236ACPX-1 W21ACPX-2
    Text: 1232-2012.qxp:QuarkCatalogTempNew 9/7/12 5:24 PM Page 1232 INTERCONNECT TEST & MEASUREMENT 13 Special Purpose Relays and Sockets Traffic Flash Transfer Relays — 21/136 Series Voltage Sensing Relays — 236 Series 168986 RoHS H Meets NEMA TS2 Standards


    Original     		136-62T3A1 E43641 SK-SQB11-DS SK-CIR11-DS SK-REC22-PW SK-REC28-PW 11-Pin SK-TRF12-BFW-1 SK-TRF12E-BFW-1 S-0141 277h S-5412 a 1515 beau W236ACPX-1 W21ACPX-2 PDF

    GGX5

    Abstract: nimh spice model charge LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS LT5503
    Text: Final Electrical Specifications LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control


    Original     		LTC4403-1/LTC4403-2 ANSI-136) LTC4403-1) LTC4403-2) 800MHz Fi92cm2 LTC3200 100mA LTC3401 LTC3402 GGX5 nimh spice model charge LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS LT5503 PDF

    cellular phone amplifier power control transistor

    Abstract: mobile rf power amplifier transistor nd1 marking code RF AMPLIFIER FOR 10MHz LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS RF schottky diode 900mhz Diplexer
    Text: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)


    Original     		LTC4403-1/LTC4403-2 ANSI-136) LTC4403-1) LTC4403-2) 300MHz 20dBm LT5515 LT5516 800MHz cellular phone amplifier power control transistor mobile rf power amplifier transistor nd1 marking code RF AMPLIFIER FOR 10MHz LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS RF schottky diode 900mhz Diplexer PDF

    LT5503

    Abstract: No abstract text available
    Text: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)


    Original     		LTC4402-1/LTC4402-2 ANSI-136) LTC4402-1) LTC4402-2) 300MHz 450kHz 92cm2 LTC3200 100mA LTC3401 LT5503 PDF

    LT5503

    Abstract: No abstract text available
    Text: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)


    Original     		LTC4403-1/LTC4403-2 ANSI-136) LTC4403-1) LTC4403-2) 300MHz i20dBm LT5515 20dBm LT5516 800MHz LT5503 PDF

    LTC4402-1

    Abstract: LTC4402-1EMS8 LTC4402-2 LTC4402-2EMS LTC4402-X nimh spice model charge nd1 marking code 900mhz Diplexer phase shifter DC-3GHz LTC5507
    Text: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)


    Original     		LTC4402-1/LTC4402-2 ANSI-136) LTC4402-1) LTC4402-2) 300MHz 450kHz 92cm2 LTC3200 100mA LTC3401 LTC4402-1 LTC4402-1EMS8 LTC4402-2 LTC4402-2EMS LTC4402-X nimh spice model charge nd1 marking code 900mhz Diplexer phase shifter DC-3GHz LTC5507 PDF

    25C80

    Abstract: JRC 2100 8 pin ST7FLiteUS5 DALI BASIC SO U435 MOROCCO AN2326 HE10 JRc 1431 A STX-RLINK pin out 02800E
    Text: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C


    Original     		DIP16 25C80 JRC 2100 8 pin ST7FLiteUS5 DALI BASIC SO U435 MOROCCO AN2326 HE10 JRc 1431 A STX-RLINK pin out 02800E PDF

    JRC 2100 8 pin

    Abstract: JRC 2100 bs 1600 pir sensor Pinout Diagram for IC ne555 electronic watchdog application using NE555 IC 16 PIN PIR SENSOR IC PINOUT ST7DALI-EVAL kit NE555 applications and pins configurations DIP8-300 Datasheet of ic ne555
    Text: ST7LITEUS2 ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers Features • ■ Memories – 1 Kbytes single-voltage Flash Program memory with readout protection, ICP and IAP 10 K write/erase cycles guaranteed data retention: 20 years at 55 °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		VL31B1G63E-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63E 512Mx8 240-pin 240-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B5663A-K0/K9/F8/E7S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5663A is a 256Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		VL31B5663A-K0/K9/F8/E7S 256Mx72 240-PIN VL31B5663A 128Mx8 240-pin 240-pin, PDF

    DDR3-1066

    Abstract: K4B2G0846D-HCK0 240-PIN DDR3-1333 PC3-10600 PC3-12800 samsung DDR3 SDRAM 2GB
    Text: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		VL31B1K63A-K0/K9/F8S 1Gx72 240-PIN VL31B1K63A 256Mx8 240-pin 240-pin, PC3-12800YP DDR3-1066 K4B2G0846D-HCK0 DDR3-1333 PC3-10600 PC3-12800 samsung DDR3 SDRAM 2GB PDF

    DDR3 timing diagram

    Abstract: 240-PIN DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D K4B2G0846D-HCK0
    Text: Product Specifications PART NO.: VL31B1G63E-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM VLP ECC UNBUFFERED DIMM 240-PIN Description The VL31B1G63E is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		VL31B1G63E-K0/K9/F8/E7S 1Gx72 240-PIN VL31B1G63E 512Mx8 240-pin 240-pin, DDR3 timing diagram DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K4B2G0846D K4B2G0846D-HCK0 PDF

    240-PIN

    Abstract: DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 samsung K9 DDR3 timing diagram
    Text: Product Specifications PART NO.: VL31B5663A-K0/K9/F8/E7S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B5663A is a 256Mx72 DDR3 SDRAM high density UDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		VL31B5663A-K0/K9/F8/E7S 256Mx72 240-PIN VL31B5663A 128Mx8 240-pin 240-pin, DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 samsung K9 DDR3 timing diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL31B1K63A-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC UNBUFFERED DIMM 240-PIN Description The VL31B1K63A is a 1Gx72 DDR3 SDRAM high density UDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 240-pin dual in-line memory module and is intended for mounting into an edge


    Original     		VL31B1K63A-K0/K9/F8S 1Gx72 240-PIN VL31B1K63A 256Mx8 240-pin 240-pin, PC3-12800/-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICs TV M54487FP 1.0GHz 1/128. 1/136 2-MODULUS HIGH SPEED PRESCALER DESCRIPTION The M54487FP is a semiconductor integrated circuit with ECL circuitry and includes built-in, dual-modulus frequency PIN CONFIGURATION (TOP VIEW) POWER SUPPLY Vcc ^


    OCR Scan     		M54487FP M54487FP 1000pF PDF

    PB595CX

    Abstract: MPB595CX NEC SIP 8pin upb595 PB595GR mPB595 TB-427 PB595
    Text: r sec w a m w n s. DATA SHEET Preliminary BIPOLAR DIGITAL INTEGRATED CIRCUIT /¿PB595 / 1 GHz DIVIDE-BY-128/136 LOW POWER PR ESC A LER The fiPB595 is a two-modulus prescaler for T V , CATV and V T R , which adopts NEC's original pulse swallowing method, it is high sensitivity and low power prescaler.


    OCR Scan     		uPB595 DIVIDE-BY-128/136 fiPB595 /iPD1700 CuPB595CX /iPB595HA) PB595GR) PB595GR S8GM-50-225B-1 PB595CX MPB595CX NEC SIP 8pin upb595 PB595GR mPB595 TB-427 PB595 PDF

    PD1712

    Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
    Text: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich


    OCR Scan     		bM27Mm DIVIDE-BY-128/136 UPB568, UPB568HA iPB568C, PB568HA jjPB568G jjPD1700 /JPD1709, PD1711, PD1712 NEC SIP 8pin JPB568G UPB568HA P8HA-254B PDF

    upb568

    Abstract: No abstract text available
    Text: Jb „ i 'I 1991 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER UPB568, UPB568HA T he iP B 5 6 8 C , the *iP B 5 6 8 H A and the mPB568G »re tw o-m odulus prescaleres for T V , C A T V and V T R , w h ic h adoptes NEC's original pulse swallowing m ethod, they are high sensitivity and low power prescaleres.


    OCR Scan     		DIVIDE-BY-128/136 UPB568, UPB568HA mPB568G PB568C) J/PB568G) upb568 PDF

    tms 374

    Abstract: 3131 tms 374 chip
    Text: TMS 3126, 3127, 3128, 3129, 3130, 3131, 3132 LC. NC DUAL 96-, 100-, 128-, 132-, 133-, 136-, 144-BIT STATIC SHIFT REGISTERS MOS LSI B U L L E T IN • DC to 2 .5 -M H z Operation • Static Configuration • Single T TL -C o m p atib le Clock N O . D L -S 7 5 1 2 2 6 3 , M A Y


    OCR Scan     		144-BIT to-99 tms 374 3131 tms 374 chip PDF

    3126 "pin compatible"

    Abstract: tms 374 tms 374 chip 3129 3127 nc
    Text: MO S LSI T M S 3126, 3127. 3128. 3129. 3130. 3132 NC DUAL 96-, 100-, 128-, 132-, 133-, 133-, 136-, 144-BIT STATIC SHIFT R E G IS T E R S O C T O B E R 1977 • D C to 2.5-MHz Operation • Static Configuration • Single TTl-Com patibte Clock 8-PIN D U A L -IN -L IN E P A C K A G E


    OCR Scan     		144-BIT 3126 "pin compatible" tms 374 tms 374 chip 3129 3127 nc PDF

    Untitled

    Abstract: No abstract text available
    Text: TM S 3126, 3127, 3128, 3129, 3130, 3131, 3132 LC. NC D U A L 96-, 100-, 128-, 132-, 133-, 136-, 144-BIT STATIC S H IFT R EG ISTER S M OS LSI B U L L E T I N N O . D L -S 7 5 1 2 2 6 3 , M A Y 1 9 7 5 D C to 2 .5 -M H z Operation TO -99 H E R M E T IC A L L Y S E A LE D PACKAGE


    OCR Scan     		144-BIT PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF

    Untitled

    Abstract: No abstract text available
    Text: P hilips Sem iconductors Product specification W ide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm • 11 MHz bandwidth


    OCR Scan     		135/CNW 136/CNW CNW4502 CNW136, E90700 BS415 BS7002 BS6301 PDF