1348 TRANSISTOR Search Results

Contextual Info: 19-1348; Rev 0; 4/98 Precision Shunt Regulators with Reset in SOT23-3 _Features ♦ 100µA to 50mA Shunt Current Range _Applications _Ordering Information ♦ Low Cost ♦ 3-Pin SOT23 Package

68HC11

Abstract: MAX633 MAX6330 MAX6331 transistor ekaa
Contextual Info: 19-1348; Rev 0; 4/98 Precision Shunt Regulators with Reset in SOT23-3 _Features ♦ 100µA to 50mA Shunt Current Range _Applications _Ordering Information ♦ Low Cost ♦ 3-Pin SOT23 Package

SR latch

Abstract: s-r latch VOLTAGE REGULATOR 230V inverter circuit diagram LT3587 power amplifer circuit diagram pwm inverter output filter schematic
Contextual Info: DEMO CIRCUIT 1348A QUICK START GUIDE LT3587EUD LT3587EUD High Voltage Monolithic Inverter and Dual Boost DESCRIPTION Demonstration Circuit 1348 is a single chip solution for applications requiring two positive and one negative high voltage supplies. The input

transistor ekaa

Abstract: 68HC11 MAX633 MAX6330 MAX6331
Contextual Info: 19-1348; Rev 1; 12/05 Precision Shunt Regulators with Reset in SOT23-3 _Features The MAX6330/MAX6331 combine a precision shunt regulator with a power-on reset function in a single SOT23-3 package. They offer a low-cost method of

1008CS-220XMBC

Abstract: ABA SURFACE MOUNT ABA-51563 ABA-52563 ABA-53563 AbA Transistor
Contextual Info: Agilent ABA-51563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1348 GND 2 Input Introduction Agilent Technologies’ ABA-51563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT-363 surface mount plastic package. Providing a

Contextual Info: 19-1348; Rev 1; 12/05 Precision Shunt Regulators with Reset in SOT23-3 _Features The MAX6330/MAX6331 combine a precision shunt regulator with a power-on reset function in a single SOT23-3 package. They offer a low-cost method of

AbA Transistor

Abstract: rf choke 1008CS-220XMBC ABA-51563 ABA-52563 ABA-53563 ABA SURFACE MOUNT
Contextual Info: ABA-51563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1348 Output & Vcc AHx GND 1 GND 2 Input Introduction Avago Technologies’ ABA-51563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT-363 surface mount plastic package. Providing

G3 SOT23-3

Abstract: si MARK SOT23-3 TS120S AX6330
Contextual Info: 19-1348; Rev0; 4/98 Precision Shunt R egulators w ith Reset in SOT23- 3 The M AX6330/M AX6331 co m b in e a p re cisio n shunt reg u la to r w ith a pow er-on reset fu nctio n in a single SOT23-3 p a cka g e . They offer a low -cost m ethod of operating sm all m icro p ro ce sso r pP -based system s

1348 transistor

Abstract: MPS-A12
Contextual Info: Silicon 21 Darlington Transistor M P S-A 12 The General Electric MPS-A12 is a Silicon Planar Epitaxial Passivated NPN Darlington Transistor is designed for preamp­ lifier input applications where high impedance is a requirement. SYMBOL Collector to Emitter

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

ferroxcube for ferrite beads 56-590-65

Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B
Contextual Info: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l­ tiplier applications in m ilitary and mobile FM equipment. •

FR180

Abstract: BFR180
Contextual Info: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

CEFF640

Abstract: PF202
Contextual Info: CEFF640 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V , 9.8A , RDS ON =180mΩ @VGS=10V Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability. TO-220F package. G G D S S TO-220F

CBC 184 transistor

Abstract: CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

ULA1U

Abstract: digilin ULA2G ULA1G
Contextual Info: A R R A Y S : TH E U LA PRODUCT DATA S U M M A R Y - ULA DIGILIN ARRAYS A rray Type Gate Count ULA1G 100 ULA1L 150 ULA2G 160 1.9 ULA1U 280 3.4 676 741 14 to 40 ULA2L 340 200.0 715 1205 14 to 40 ULA2M 500 0.4 1184 968 14 to 40 14 to 40 Gate Power jjW No. o f Active

DSB010

Abstract: DSD010 DSC010 2sa1571 2SK1375 DSA010 CAPACITOR MICROPHONE 2SC4146 2SC4047 2SC4066
Contextual Info: Ordering number: EN 5324A No.5324A SAßiYO Notification of the Designation of Maintenance and Obsolete Discrete Devices Affected Products : Products listed below Thank you for your continued use of SANYO semiconductor products. This notice announces the designation of maintenance and obsolete SANYO semiconductor products. Please make

Contextual Info: A Product Line of Diodes Incorporated ZXTP4003Z 100V PNP LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1

Diodes Incorporated 17-33

Contextual Info: A Product Line of Diodes Incorporated ZXTP4003Z 100V PNP LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1

optocouplers

Abstract: high speed solid state relay 8 channel optocouplers IGBT Gate Drive Optocoupler analog input optocoupler IGBT Gate Drive high speed "solid state relay" optocoupler drive relay 630 optocoupler high speed logic to logic optocoupler
Contextual Info: Whal H EW LETT O ptocouplers D ata Sheet Index • Single Channel, High Speed Optocouplers. 1-16 • High CMR, High Speed Optocouplers. 1-33

Contextual Info: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc

Contextual Info: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1

D 1414 transistor

Abstract: HCPL 454 optocoupler 630 HCNW4506 OPTOCOUPLER 6N137 hcpl 8200 optocoupler a 4504 A 7860 Optocoupler HSSR-8060 2601 optocoupler
Contextual Info: Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number Package Prop VDE Insulation CTR CMR – V/µs (VCM) 300 400 Delay VIORM UL = 1 min. Page mil mil If tPHL tPLH Min. Max. 1000 10000 15000 DIP SO8 DIP mA µs (max.) % % (10 V) (1.5 kV) (1.5 kV) 630 Vp 1414 Vp 2500 V 5000 V No.

delay line ms-19

Abstract: D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor
Contextual Info: q i Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number 300 mil DIP 6N135 HCPL-0500 HCNW135 / 6N136 HCPL-0501 HCNW136 / HCPL-4502I1] HCPL-0452M1 HCNW4502I1! / HCPL-4503H] HCPL-0453I1! HCNW450311! / HCPL-4504I1] HCPL-045411! HCNW450411!