1328MM2 Search Results

W3E16M72S-XBX

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of

Contextual Info: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

WEDPN16M72V-XBX

Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
Contextual Info: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)

Contextual Info: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive

Contextual Info: WEDPND16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM Preliminary* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 40% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n 2.5V ±0.2V core power supply

W3E16M72S-XBX

Abstract: W3E32M72S-XBX
Contextual Info: W3E16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM FEATURES „ DDR SDRAM Rate = 200, 250, 266 „ Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ BENEFITS 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)

AS4DDR16M72PBG

Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
Contextual Info: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count

Diodes Incorporated 17-33

Abstract: CKE 2009 cke02 RING TERM M6 2,5mm2
Contextual Info: PreLIMINARY Information L9D125G80BG4 2.5 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

Contextual Info: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

WEDPN16M72V-XB2X

Contextual Info: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive

AS4DDR16M72PBG

Abstract: AS4DDR32M72PBG W3E16M72S-XBX
Contextual Info: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count

Contextual Info: WEDPND16M72S-XBX White Electronic Designs 16Mx72 DDR SDRAM Advanced* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 40% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs 16Mx72 Synchronous DRAM WEDPN16M72V-XBX Preliminary* FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

W3E16M72S-XBX

Abstract: class sstl
Contextual Info: W3E16M72S-XBX 16Mx72 DDR SDRAM Preliminary* FEATURES BENEFITS ! High Frequency = 200, 250, 266MHz ! 40% SPACE SAVINGS ! Package: ! Reduced part count ! Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm ! 2.5V ±0.2V core power supply • 34% I/O Reduction

WEDPN8M72V-XB2X

Contextual Info: White Electronic Designs WEDPN8M72V-XB2X 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ± 0.3V power supply Fully Synchronous; all signals registered on positive

Contextual Info: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

WEDPN8M72V-XBX

Contextual Info: WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm ! Single 3.3V ±0.3V power supply ! Fully Synchronous; all signals registered on positive edge of system clock cycle

WEDPN16M72V-XB2X

Contextual Info: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive

16M x 16 DDR TSOP-66

Abstract: tsop 66 WEDPND16M72S-XBX WEDPND8M72S-XBX TSOP 66 Package
Contextual Info: 8M/16M x 72 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPND8M72S-XBX WEDPND16M72S-XBX VA N CE DDR SDRAM Speed = 266, 250, 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V Bidirectional data strobe DQS per byte

DM 321

Abstract: DDR pinout AS4DDR32M72PBG
Contextual Info: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count

Contextual Info: W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES BENEFITS  DDR SDRAM Rate = 200, 250, 266  40% SPACE SAVINGS  Package:  Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm  Reduced I/O count  2.5V ±0.2V core power supply