a1357
Abstract: No abstract text available
Text: BBS3002 Ordering number : ENA1357A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BBS3002 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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Original
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ENA1357A
BBS3002
13200pF
PW10s,
--30V,
A1357-4/4
a1357
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PDF
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A1907
Abstract: TF-680
Text: BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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Original
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BMS3003
ENA1907
13200pF
PW10s,
A1907-5/5
A1907
TF-680
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET http://onsemi.com –60V, –100A, 5.8mΩ, TO-263-2L/TO-263 Features • • ON-resistance RDS on 1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) • TO-263 4V drive Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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ENA1357C
BBS3002
O-263-2L/TO-263
13200pF
O-263
PW10s,
--30V,
--60A
L100H,
A1357-6/6
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PDF
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a1357
Abstract: No abstract text available
Text: BBS3002 Ordering number : ENA1357B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BBS3002 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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Original
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BBS3002
ENA1357B
13200pF
A1357-7/7
a1357
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PDF
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Untitled
Abstract: No abstract text available
Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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Original
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BMS3003
ENA1907A
13200pF
A1907-7/7
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) -4V drive Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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ENA1907B
BMS3003
O-220F-3SG
13200pF
A1907-5/5
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PDF
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A1907
Abstract: TO-220F-3SG
Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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Original
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ENA1907A
BMS3003
13200pF
PW10s,
--36V,
A1907-7/7
A1907
TO-220F-3SG
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PDF
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a1357
Abstract: BBS3002-DL-1E BS3002 A1357-3 TO-263-2L
Text: BBS3002 Ordering number : ENA1357B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BBS3002 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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Original
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ENA1357B
BBS3002
13200pF
PW10s,
--30V,
A1357-7/7
a1357
BBS3002-DL-1E
BS3002
A1357-3
TO-263-2L
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PDF
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