131072WORDS Search Results

Contextual Info: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

32PIN

Abstract: CXK5V81000ATM TSOP032-P-0820-A
Contextual Info: CXK5V81000ATM -85LLX/10LLX 131072-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized

CXK5T81000AM

Abstract: CXK5T81000ATM CXK5T81000AYM L01r
Contextual Info: CXK5T81000ATM/AYM/AM -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by

BP-119

Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21, 1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

Contextual Info: MITSUBISHI LSI* M H 12908T N A-85,-10,-12,-IS 1 0 4 « 5 7 e -B IT < 1 3 1 0 7 2 -« » 0 R D BY S -B IT C M 0 S STATIC RAM MODULE DESCRIPTION The M H 12908T N A is a 1048576-bits CMOS static RAM module organized as 131072-words by 8-bits. It consists of four industry standard 32K x 8 static RAMs and one

CXK581020AJ

Abstract: CXK581020AJ-25 32PIN CXK581020AJ-20 CXK58102QAJ scu32
Contextual Info: SONY CXK581020AJ 131072-words x 8-bits High Speed CMOS Static RAM Description The CXK581020AJ is a high speed CM O S static 32 pin S O J Plastic RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply. The CXK581020AJ is suitable for use in high

sony 5v

Abstract: "Pin compatible" SONY 32PIN CXK581120AJ-12 CXK581120AJ-15 Sony CMOS Sony
Contextual Info: SONY CXK581120AJ 131072-wards x 8-bits High Speed CMOS Static RAM - 12/15 Preliminary Description The CXK581120AJ is a high speed 1M bit CMOS static RAM organized as 131072 words by 8 bits. It operates at 12ns/15ns access time from a single 5V power supply, utilizing center-ground/power pin

HM67S36130

Abstract: HM67S36130BP-7 SA10 SA11 SA12 SA13 SA15 SA16 Hitachi DSA00189 SA933
Contextual Info: HM67S36130 シリ−ズ 131,072-words x 36-bits Synchronous Fast Static RAM ADJ-203-243B Z Rev. 2.0 ’98. 6. 24 特長 l 3.3V ± 5%動作 l 入出力は LVCMOS コンパチブルです。 l 同期式動作です。 l セルフタイムレイトライト機能があります。

HM67S18258BP

Abstract: BS 2G 210 HM67S36130 HM67S36130BP-7 SA10 SA11 SA12 SA13 SA15 SA16
Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM ADE-203-659A Z Product Preview Rev. 1 Feb. 21, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

Contextual Info: HM67S36130 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-659B(Z) Product Preview Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

HM67S36130

Abstract: HM67S36130BP-7 SA10 SA11 SA12 SA13 SA15 SA16 Hitachi DSA0015
Contextual Info: HM67S36130 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-659B(Z) Product Preview, Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

P0820A

Contextual Info: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)

Contextual Info: MITSUBISHI LSIs MH12808TNA-85, -10, -12, -15 1048576-BIT 131072-W0RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M H12808TN A is a 1048576-bits CMOS static RAM module organized as 131072-words by 8-bits. It consists of four industry standard 32K x 8 static RAMs and one

Hitachi CS 45 EM

Contextual Info: HM678127UH Series Under development 131072-words x 8-bits High Speed Static Access Memory Features Pin A rrangem ent • 131072-w ords x 8-bits organization • D irectly T TL com patible input and output • C h o ice o f 5.0 V o r 3.3 V p o w er su p p lie s for

Contextual Info: HM678127UH Series Under development 13 10 72 -w o rd s x 8 -b its High S p eed S tatic A ccess M em ory Features Pin Arrangement • 131072-words x 8-bits organization • Directly TTL compatible input and output • C hoice o f 5.0 V or 3.3 V pow er supplies for

Contextual Info: HM678127UH Series Under development 131072-words x 8-bits High Speed Static Access Memory Features Pin Arrangement • 131072-words x 8-bits organization • Directly TTL compatible input and output • Choice of 5.0 V or 3.3 V power supplies for output buffers

Contextual Info: MH12908TNA-85,-10,-12,-15/ MH12908TNA-85H.-10H,-12H,-15H 1048576-BIT 131Q72-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The MH 12908TNA is a 1 0 4 8 5 7 6 -bits CMOS static RAM module organized as 131072-words by 8 -b its. It consists of four industry standard 32K x 8 static RAMs and one

Contextual Info: MITSUBISHI LSIs M H 1 2 9 0 8 T N A -8 S , - 1 0 , - 1 2 , - I S 1 0 4 8 5 7 6 - B IT 1 3 1 0 7 2 -W 0 R D BY 8 -B IT CMOS STATIC RAM MODULE DESCRIPTION The M H 12908T N A is a 1048576-bits CMOS static RAM module organized as 131072-words by 8-bits. It consists

CXK581020A

Abstract: CXK581020AJ-25 SCU032-P-C400-A
Contextual Info: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.

32PIN

Abstract: CXK5T81000ATN CXK5T81000AYN tHZ11
Contextual Info: CXK5T81000ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by

Contextual Info: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 O L L X /1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T81 OOOATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and

Contextual Info: MITSUBISHI LSIs M H 1 2 9 0 8 T N A - 8 5 , - 1 0 , - 1 2 , - 1 5 1 0 4 8 5 7 6 -B IT 1 3 1 0 7 2 -W 0 R D BY 8 -B IT C M 0 S STATIC RAM PIN CONFIGURATION (TOP VIEW) A ig a * i a— M H I2 9 0 8 T N A [I EE ADCRLSi IN PU TS FEATURES A 5 Ad P o w e r s u p p ' y c u r r en :