131/131-6 WJ 64 Search Results

62792

Abstract: 300/SCR 131- 6 WJ 66
Contextual Info: uuU RA66 / SMRA66 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - THREE STAGES: 37.0 dB TYP. LOW NOISE: <3.5 dB (TYP.) MEDIUM OUTPUT LEVEL: > +15.5 dBm (TYP.) HIGH REVERSE ISOLATION: >50 dB (TYP) Outline Drawings

transistor 13000

Contextual Info: u u U A29-1 / SMA29-1 w 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 Specifications 0.200 (5.08) I I I Characteristics Frequency (Min.)

J 6920

Abstract: J 6920 FET 188 053
Contextual Info: uuU PA48 / SMPA48 1.0 TO 4.0 GHz TO-8B2 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH OUTPUT LEVEL: +24.0 dBm (TYP.) HIGH GAIN: 16.0 dB (TYR) GaAs FET AMPLIFIER Outline Drawings PA48 Specifications’1

wj-CA36-1

Abstract: WJ-A36 131- 6 WJ 67
Contextual Info: uuU A36-1 / SMA36-1 100 to 2300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 16.2 dB TYP. LOW VSWR: <1.6:1 (TYP.) MEDIUM OUTPUT LEVEL: +12.0 dBm (TYP.) Outline Drawings A36-1 0 200 (5.06} Specifications*

transistor UN 4215

Abstract: 421-5 MAG WJA8 WJ-A87 ATIC 107 443-1 MAG BC 170c transistor 10516
Contextual Info: U j J A 8 7 / S M A 8 7 10 to 400 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +17.5 dBm TYP. HIGH THIRD ORDER I.P.: +33 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A87 Specifications

WJA43

Abstract: SM 4108 w-ja43
Contextual Info: uuU A43 / SMA43 100 to 3200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 100-3200 MHz EXCELLENT GAIN BLOCK: 11.5 dB TYR MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) Outline Drawings A 43 Specifications* 0.200 (5.08)

EUPEC TT

Abstract: powerblock TT 131 N 1200 EUPEC powerblock tt 131 tt 25 n powerblock powerblock tt 60 N EUPEC TT 131 N 12 tt131 EUPEC powerblock tt EUPEC tt 25 N 12 powerblock TT 60 N 1200
Contextual Info: EUPEC blE 3 4 0 3 2 ^ 7 OO d l D T Ö ^IT J> lUPEC TT 131 N, TD 131 N, DT131 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: EUPEC blE » • 34032^7 OGOICHÖ 'ìlT « U P E C TT 131 N, TD 131 N, DT131 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600, 800 1000, 1200 1400 V V V Vrsm = Vrrm + 100 V Itrmsm Itavm 220 131 140 3600 3200

bc 206 transistor

Abstract: Transistor BC 227 TRANSISTOR BC 187 TRANSISTOR C460
Contextual Info: uuU PA38 / SMPA38 200 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2400 MHz TYP. HIGH OUTPUT LEVEL: +23.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) HIGH THIRD ORDER INTERCEPT POINT: +34 dBm (TYP.)

Contextual Info: uuJ L42 / SML42 50 TO 4000 MHz THIN FILM LIMITER MODULE ♦ AVAILABLE IN SURFACE MOUNT ♦ VERY WIDE BANDWIDTH ♦ GOOD SUPPRESSION OF EVEN ORDER HARMONICS ♦ LOW INSERTION LOSS: 3.5 dB TYP. Outline Drawing Specifications* L42 Characteristics Frequency (Min.)

WJA24

Abstract: WJ-A24
Contextual Info: uuU A24 / SMA24 5 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 20.0 dB TYP. ♦ ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2.5°, 100-1500 MHz ♦ LOW VSWR: <1.4:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +8 dBm (TYP.)

WJ A38

Abstract: A38S
Contextual Info: UJ ij A38 / SMA38 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +19 dBm TYP HIGH THIRD ORDER I.P: +30 dBm (TYP.) WIDE BANDWIDTH: 10-2000 MHz •¡SSI Outline Drawings Specifications Characteristics

bc 149 transistor

Abstract: atic 144 WJ-CA45-1
Contextual Info: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11

transistor BC 157

Abstract: 13000 transistor TO-220
Contextual Info: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings

MD21-MD20

Abstract: OE23 SC15064 pc motherboard schematics
Contextual Info: J b . SIERRA æMICDNDUCTOR ' v PRODUCT BRIEF FALCON/64 Integrated 64-Bit GUI Accelerator SC15064 FEATURES Graphics Acceleration (hardware based) Bus Support BitBlt • Raster operations • VESA VL-BUS Line draw • PCI Local Bus ISA BUS Pattern fill

pj 989

Abstract: P4H1 232A2 6412a 1YZ85
Contextual Info: %:8H1<1@6:B&I646&+3884J&!87K&L I898<M8:&$NN" !"#$%&' "#$*+,-)./&012345678&!898178: 5143&;<=:>78?&+8@A141714B&CD"E&?F<G O864P:8A • !"#$%&'('%)'(*%+','-"."(/0%1234%5-"(676 ■ 89:%,$;(;&*(*+(;) ■ ■ ■ ■ @&

Contextual Info: fax id: 5214 CYPRESS CY7C008V/009V CY7C018V/019V PRELIMINARY 3.3V 64K/128K x 8/9 Dual-Port Static RAM Features Fully asynchronous operation Automatic power-down Expandable data bus to 16/18 bits or more using Mas­ ter/Slave chip select when using more than one device

powerblock tt 45

Abstract: powerblock TT 95 N 1200 thyristor tt 18 n 800 tt 92 TP-7F tt 251 n powerblock powerblock TD 170 N thyristor TT 430 N DT46F thyristor tt 162 n 12
Contextual Info: Phase Control Thyristor Modules Type V drm ' trmsm Itsm Ji2d t V rrm V A A A 2s 10 ms, 10ms, Vdsm = V DRM Vrsm = Tyj max T vj max V rrm+ 1 oov •103 ItAVM^T c V TO rT A /°C V m fì (d i/d t )cr A /p s MS 180° el Tvj —Tvj max Tvj “ Tyj m aX DIN typ.

AM29F200BB support

Contextual Info: SUPPLEMENT Am29F200B Known Good Wafer 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory, Die Revision 1 Note: This supplement contains information on the Am29F200B in Known Good Wafer form. Refer to the Am29F200B standard datasheet (publication 21526) for full electrical specifications.

AM29F200BB

Abstract: AM29F200BB-55 AM29F200BT-55 AM29F200BT-90
Contextual Info: Am29F200B Known Good Wafer Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

TAJE107M025

Abstract: 3216 footprint IPC Ta2O5 phase diagram TLJG107M004 TPS 1028 CWR09 CWR11 CWR19 CWR29 TS16949
Contextual Info: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.5 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

71C16400

Abstract: 71c16
Contextual Info: GM71C16400C/CL LG Semicon Co.,Ltd. 4,194,304 W ORDS x 4 BIT CM OS DYNAM IC RAM Description Features The G M 71C 16400C/CL is the new generation dynamic R A M organized 4,194,304 words x 4 bit. G M 71C 16400C/CL has realized higher density, higher performance

HR5000

Abstract: U10-2 SMD CAPACITOR 1206 2.2Mf 16V smd code 12.00 Jn 1K100 NOJB107M006 FXXXX Plastic Mold CRYSTAL SMD TCJD106M050 CWR11
Contextual Info: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.10 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

Contextual Info: AMERICAN POWER DEVICES S'îE D • 0737135 GGGDGfiS 57Ô ■ APD P6KE6.8 -P6KE200 P6KE6.8A - P6KE200A american S E M IC O N D U C T O R S power devices, inc. 600 W silicon voltage transient suppressors MECHANICAL CHARACTERISTICS FEATURES MAXIMUM RATINGS • 600 W of peak pulse power