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Rochester Electronics LLC HFA1130MJ-883 IC OPAMP CFA 1 CIRCUIT 8CERDIP
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DigiKey	HFA1130MJ-883	Bulk			18	1 - 10 - 100 $17.46 1000 $17.46 10000 $17.46	Buy Now
KEMET Corporation PEG130MJ4140QL1 CAP ALUM 1400UF 63V AXIAL TH
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Newark	PEG130MJ4140QL1	Bulk			125	1 - 10 - 100 $3.41 1000 $2.74 10000 $2.55	Buy Now
Bristol Electronics	PEG130MJ4140QL1		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	PEG130MJ4140QL1			143 Weeks	125	1 - 10 - 100 - 1000 - 10000 -	Buy Now
KEMET Corporation PEG130MJ4140QE4 CAP ALUM 1400UF 63V AXIAL TH
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DigiKey	PEG130MJ4140QE4	Bulk			1,161	1 - 10 - 100 - 1000 - 10000 $2.95077	Buy Now
Avnet Abacus	PEG130MJ4140QE4			31 Weeks	1,161	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Dale CRCW1206130MJPTAHR RES SMD 130M OHM 5% 1/4W 1206
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DigiKey	CRCW1206130MJPTAHR	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.2015	Buy Now
Vishay Dale CRCW0603130MJPEAHR RES SMD 130M OHM 5% 1/10W 0603
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DigiKey	CRCW0603130MJPEAHR	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.05866	Buy Now

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130MJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK2124 Abstract: DSA003718 Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2	Original	PDF	2SK2124 130mJ O-220E 2SK2124 DSA003718
2SK3044 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3044 130mJ O-220D-A1 2SK3044
2SK2127 Abstract: No abstract text available Text: 2SK2127 Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications	Original	PDF	2SK2127 130mJ O-220E 2SK2127
2SK2127 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na	Original	PDF	2SK2127 130mJ 2SK2127
2SK3046 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	PDF	2SK3046 130mJ O-220D 2SK3046
2SK3046 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	PDF	2SK3046 130mJ O-220D 2SK3046
2SK2124 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm	Original	PDF	2SK2124 130mJ O-220E 2SK2124
2sk2127 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm	Original	PDF	2SK2127 130mJ 2sk2127
2sk2127 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2	Original	PDF	2SK2127 130mJ O-220E 2sk2127
2SK3044 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	PDF	2SK3044 130mJ O-220D 2SK3044
Untitled Abstract: No abstract text available Text: 2SK2124 Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications	Original	PDF	2SK2124 130mJ O-220E
2SK2124 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na	Original	PDF	2SK2124 130mJ 2SK2124
2SK3046 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3046 130mJ O-220D-A1 2SK3046
2SK3044 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	PDF	2SK3044 130mJ O-220D 2SK3044

BTS5441 Abstract: INFINEON PART MARKING bts BTS5441G Text: Target Data Sheet, V1.3, Nov 2006 BTS 5441-2G Smart High-Side Power Switch PROFET Four Channels, 25 m Ω Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5441-2G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5	Original	PDF	5441-2G BTS5441 INFINEON PART MARKING bts BTS5441G
SMD transistor package code V12 Abstract: BTS5246L Text: Target Data Sheet, V1.2, Aug 2006 B T S 52 4 6 - 2 L Smart High-Side Power Switch PROFET Two Channels, 19 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5246-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3	Original	PDF	5246-2L SMD transistor package code V12 BTS5246L
BTS5241G Abstract: 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43 Text: Target Data Sheet, V1.3, Nov 2006 BTS 5241-2G Smart High-Side Power Switch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5241-2G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5	Original	PDF	5241-2G BTS5241G 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43
transistor 315 Abstract: 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12 Text: Target Data Sheet, V1.2, August 2006 BTS 5242-2L Sm art Hi gh-Si de Pow er S witch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5242-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original	PDF	5242-2L transistor 315 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12
bts5241l Abstract: bts5241 Text: Target Data Sheet, V1.3, Nov 2006 BTS 5241-2L Smart High-Side Power Switch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5241-2L 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5	Original	PDF	5241-2L bts5241l bts5241
BTS5246L Abstract: 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52 Text: Target Data Sheet, V1.2, Aug 2006 BTS 5246-2L Smart High-Side Power Switch PROFET Two Channels, 19 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5246-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3	Original	PDF	5246-2L BTS5246L 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52
2SK2124 Abstract: No abstract text available Text: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t\|= 60ns • No secondary breakdown ■ Applications • Non-contact relay	OCR Scan	PDF	2SK2124 130mJ -220E 2SK2124
2SK2127 Abstract: No abstract text available Text: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t\|= 60ns No secondary breakdown ■ Applications	OCR Scan	PDF	2SK2127 130mJ 2SK2127

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130MJ Search Results

130MJ Price and Stock

Rochester Electronics LLC HFA1130MJ-883

KEMET Corporation PEG130MJ4140QL1

KEMET Corporation PEG130MJ4140QE4

Vishay Dale CRCW1206130MJPTAHR

Vishay Dale CRCW0603130MJPEAHR

130MJ Datasheets Context Search

2SK2124

2SK3044

2SK2127

2SK2127

2SK3046

2SK3046

2SK2124

2sk2127

2sk2127

2SK3044

Untitled

2SK2124

2SK3046

2SK3044

BTS5441

SMD transistor package code V12

BTS5241G

transistor 315

bts5241l

BTS5246L

2SK2124

2SK2127