1306 TRANSISTOR Search Results

A 69157 scr

Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)

MAX166

Abstract: MAX1661 MAX1661EUB MAX1662 MAX1662EUB MAX1663 MAX1663EUB
Contextual Info: 19-1306; Rev 0; 10/97 EVALUATION KIT AVAILABLE Serial-to-Parallel/Parallel-to-Serial Converters and Load-Switch Controllers with SMBus Interface _Features The MAX1661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-serial converters are intended to control external

w2f 48 transistor

Abstract: w2f 97 transistor W2F 66
Contextual Info: 19-1306; Rev 0; 10/97 EVALUATION KIT AVAILABLE Serial-to-Parallel/Parallel-to-Serial Converters and Load-Switch Controllers with SMBus Interface _Features The MAX1661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-serial converters are intended to control external

Contextual Info: 19-1306; Rev 0; 10/97 EVALUATION KIT AVAILABLE Serial-to-Parallel/Parallel-to-Serial Converters and Load-Sw itch Controllers w ith SMBus Interface _Fe a t ure s The MAX1661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-serial converters are intended to control external

A1306A

Abstract: buz41
Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol

B1307M

Abstract: j 6810 J 6810 D 2SB1306 b1306 1307M 2SB1307 2SB1307M sb1306 B-1306
Contextual Info: /Transistors 2SB1306/2SB1307M/2SB1326 2S B 1306/2S B 1307M 2SB 1326 Epitaxial Planar PNP Silicon Transistors Freq. Power Amp. • • « Ä 1 VCE sat| £ ( - 7 fi\n i@ 2SB1306 /D im e n s io n s 5.a±0.2 ( U n it: m m ) 2SB 1307M 4.810.? V cE (sa t)= —0.35V (Typ.)

NEL130681-12

Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and

Contextual Info: DS1306 D S 1306 Serial Alarm R al Time Clock RTC D A L L A S se m ic o n d u c to r PIN ASSIGNMENT • Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 VCC2

Contextual Info: 19- 1306; Rev 0; 10/97 J V K J lX A J V i Losd-Sw H ch Controllers with SM Bus Interface The MAXI661/MAX1662/MAX1663 serial-to-parallel/ parallel-to-seriai converters are intended to control external power MOSFETs in power-plane switching applications. These small, low-cost devices can be used on a system

Contextual Info: 19-1306; Rev 0; 10/97 A M X I A I Serial-to-Parallel/Parallel-to-Serial Converters and Load- Swi t ch Controllers wi t h SMBus Int er f ace Features The MAX1 661/M A X 16 62 /M A X 1 663 s e ria l-to -p a ra lle l/ parallel-to-serial converters are intended to control external

1306 TRANSISTOR

Abstract: RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN2301 RN2306
Contextual Info: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design

Contextual Info: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors. z Simplify circuit design

RN1306

Abstract: RN1301 RN1302 RN1303 RN1304 RN1305 RN2301 RN2306
Contextual Info: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design

RN1306

Abstract: marking 1305 RN1301 RN1302 RN1303 RN1304 RN1305 RN2301 RN2306
Contextual Info: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design

Contextual Info: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplify circuit design

Contextual Info: RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1301, RN1302, RN1303 RN1304, RN1305, RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors. z Simplify circuit design

germanium transistors NPN

Abstract: ASY 29 2N1304 npn germanium 1302 germanium npn 1308 ic ASY29 2N1308
Contextual Info: NPN Germanium Transistors NPN G erm anium R F A llo y Tran sisto rs in T 0 5 metal case Type M a xim um Ratings BV CEO C haracteristics @ 2 5 ° C B V CBO V B V E ßO V 1CM A pr o r 1 W J JM °C hFE V ASY 28 A S Y 29 15 15 30 25 20 20 0.3 0.3 0.15 0.15 85

Contextual Info: LT1306 Synchronous, Fixed Frequency Step-Up DC/DC Converter FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Output Disconnected from Input During Shutdown Output Voltage Remains Regulated When VIN > VOUT Controlled Input Current During Start-Up

DO3316-472

Abstract: LT1306 LT1306ES8 MMBD914LT1 TAJA105K020 TAJC226M010 TPSE227M010R0100 G10440 dc dc converter 5v voltage regulator PWM 1999 transconductance sink
Contextual Info: LT1306 Synchronous, Fixed Frequency Step-Up DC/DC Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Output Disconnected from Input During Shutdown Output Voltage Remains Regulated When VIN > VOUT Controlled Input Current During Start-Up

folded cascode rail to rail op amp

Abstract: folded cascode second stage CMOS differential amplifier cascode folded cascode current mirror op amp high end amplifier schematics rail-to-rail differential amplifier AN1306 EL5157 EL5160 EL5411
Contextual Info: Avoid Instability in Rail to Rail CMOS Amplifiers Application Note Introduction The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago. Reductions in gate oxide thickness, channel length and width have been responsible for a revolutionary reduction in

Contextual Info: TOSHIBA RN1301-RN1306 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1301, RN1302, RN1303 RN1304, RN1305, RN1306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors • Simplify Circuit Design

Contextual Info: DALLAS SEMICONDUCTOR DS1306 Serial Alarm Real Tim e C lock RTC FEATURES PIN ASSIGNMENT • Real tim e clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year com pensation valid up to 2100 -X Z T 3d Vqqi Veat “ =

Contextual Info: RN1301 ~RN1306 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1301, RN1302, RN1303 RN 1304, RN1305, RN1306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Built-in Bias Resistors • Simplify Circuit Design

MAX1304ECM

Contextual Info: 19-3052; Rev 0; 10/03 8/4/2-Channel, 12-Bit, Simultaneous-Sampling ADCs with ±10V, ±5V, and 0 to +5V Analog Input Ranges A 16.6MHz, 12-bit, bidirectional parallel data bus provides the conversion results and accepts digital inputs that activate each channel individually.