13009 POWER TRANSISTOR Search Results

13009 POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
BLF	Rochester Electronics	BLF278 - VHF Push-Pull Power VDMOS Transistor
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
ON5040	Rochester Electronics LLC	ON5040 - RF Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns

13009 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
*E13009F Abstract: tr 13009 all transistor 13009 transistor 13009 p 13009 13009 NPN Transistor KSE13009FTU 13009 cross reference 13009 13009 TRANSISTOR Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	KSE13008/13009 O-220 KSE13008 KSE13009 O-220F KSE13009FTU *E13009F tr 13009 all transistor 13009 transistor 13009 p 13009 13009 NPN Transistor 13009 cross reference 13009 13009 TRANSISTOR
transistor E 13009 Abstract: 13009 H p 13009 13009 L transistor d 13009 all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f Text: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 1 ■ 2 Switch mode power supplies	Original	PDF	ST13009 O-220 transistor E 13009 13009 H p 13009 13009 L transistor d 13009 all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
transistor E 13009 l Abstract: No abstract text available Text: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 1 ■ 2 3 Switch mode power supplies	Original	PDF	ST13009 O-220 transistor E 13009 l
transistor 13009 Abstract: kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 KSE13009 Text: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009H2 KSE13009H2TU transistor 13009 kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009
transistor E 13009 Abstract: 13009 H ST13009 e 13009 f ST-13009 13009 l transistor d 13009 13009L E 13009 L p 13009 Text: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 1 ■ 2 Switch mode power supplies	Original	PDF	ST13009 O-220 transistor E 13009 13009 H ST13009 e 13009 f ST-13009 13009 l transistor d 13009 13009L E 13009 L p 13009
transistor MJ 13009 Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009 Text: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching	Original	PDF	HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
E 13009 Abstract: transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009 Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	Original	PDF	HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009
mxt 2410 sx Abstract: PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751 Text: RoHS-COMPLIANT INFORMATION CHART RoHS-compliant refers to no Pb, Cd, Cr+6, Hg, PBB or PBDE unless use exempted or within allowable limits. RoHS 5/6 refers to no Cd, Cr+6, Hg, PBB or PBDE – Pb solder or Pb plating present Telecom exemption . Bourns Product Line	Original	PDF	CD0402, OD323, CD214A-F, 14A-R, 214B-F, CD214B-R, 214C-F, 214C-R, CD214L-TxxA/CA CD214A-B, mxt 2410 sx PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751
D 13009 K Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications Text: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut« Technotogw r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:	OCR Scan	PDF	500mA VCB-10V D 13009 K e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
E 13009 2 Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l Text: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use	OCR Scan	PDF	aS3T31 O-220 MJE13008 bb53131 E 13009 2 transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
PHE13009 Abstract: No abstract text available Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The P H E 13009 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,	OCR Scan	PDF	PHE13009 PHE13009
transistor E 13009 Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR Text: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS	OCR Scan	PDF	bfci53T31 f-33-13 T0-220 MJE13008 june1988 T-33-13 transistor E 13009 transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
transistor E 13009 Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l Text: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008	OCR Scan	PDF	KSE13008/13009 O-220 KSE13009 KSE13008 transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
SR 13009 Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2 Text: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,\| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits	OCR Scan	PDF	TE13008 TE13009 SR 13009 E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2

e 13009 d Abstract: transistor E 13009 transistor E 13009 l E 13009 2 Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:	OCR Scan	PDF	KSE13008/13009 KSE13008 KSE13009 e 13009 d transistor E 13009 transistor E 13009 l E 13009 2
e13009 Abstract: transistor 13009 transistor switch 13009 13009 TRANSISTOR 13009 H 13009 NPN Transistor power switching transistor 13009 13009 13009* transistor npn 13009 Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : KSE13008 : KSE13009 Rating Unit	OCR Scan	PDF	KSE13008/13009 KSE13008 KSE13009 KSE13008 KSE13009 O-220 e13009 transistor 13009 transistor switch 13009 13009 TRANSISTOR 13009 H 13009 NPN Transistor power switching transistor 13009 13009 13009* transistor npn 13009
transistor E 13009 Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009 Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Rating Unit VcBO	OCR Scan	PDF	KSE13008/13009 KSE13008 KSE13009 transistor E 13009 all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009
13009 silicon Abstract: 13009 TRANSISTOR MJE-13009 transistor 13009 EB 13009 13009 L T 13009 MJE13009 transistor MJE13009 Text: rZ Z S G S -T H O M S O N * 7# » i» !© « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls,	OCR Scan	PDF	MJE13009 T0-220 O-220 300ns, MJE13009 13009 silicon 13009 TRANSISTOR MJE-13009 transistor 13009 EB 13009 13009 L T 13009 transistor MJE13009
transistor E 13009 Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d \| ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ \| «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
CI 13007 Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471 Text: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA	OCR Scan	PDF	ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
transistor E 13009 Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l Text: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 \| D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S	OCR Scan	PDF	ti3ti725M MJE13008 MJE13009 transistor E 13009 transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
ksd 250v 10a Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733 Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623	OCR Scan	PDF	OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	PDF	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
diode D45C Abstract: JE 800 transistor L146 IC BD800 Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 fFE M in /M a x @ lc \|XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8 8* 0.5*	OCR Scan	PDF	340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800

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13009 POWER TRANSISTOR Search Results

13009 POWER TRANSISTOR Result Highlights (5)

13009 POWER TRANSISTOR Datasheets Context Search

*E13009F

transistor E 13009

transistor E 13009 l

transistor 13009

transistor E 13009

transistor MJ 13009

E 13009

mxt 2410 sx

D 13009 K

E 13009 2

PHE13009

transistor E 13009

transistor E 13009

SR 13009

e 13009 d

e13009

transistor E 13009

13009 silicon

transistor E 13009

CI 13007

transistor E 13009

ksd 250v 10a

e13009

diode D45C