13000MHZ Search Results
13000MHZ Price and Stock
Abracon Corporation ABLS2-13.000MHZ-D4Y-TCRYSTAL 13.0000MHZ 18PF SMD |
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ABLS2-13.000MHZ-D4Y-T | Digi-Reel | 4,656 | 1 |
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ABLS2-13.000MHZ-D4Y-T | 1,855 |
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ABLS2-13.000MHZ-D4Y-T | 10 Weeks | 1,000 |
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ABLS2-13.000MHZ-D4Y-T |
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Abracon Corporation ABLS-13.000MHZ-B4-TCRYSTAL 13.0000MHZ 18PF SMD |
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ABLS-13.000MHZ-B4-T | Digi-Reel | 3,123 | 1 |
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ABLS-13.000MHZ-B4-T | Cut Tape | 123 | 1 |
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ABLS-13.000MHZ-B4-T | 4,000 |
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Abracon Corporation ABM3B-13.000MHZ-10-1-U-TCRYSTAL 13.0000MHZ 10PF SMD |
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ABM3B-13.000MHZ-10-1-U-T | Digi-Reel | 1,690 | 1 |
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ABM3B-13.000MHZ-10-1-U-T | Reel | 4,819 | 1,000 |
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ABM3B-13.000MHZ-10-1-U-T | 297 |
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ABM3B-13.000MHZ-10-1-U-T |
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Abracon Corporation ABM3C-13.000MHZ-D4Y-TCRYSTAL 13.0000MHZ 18PF SMD |
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ABM3C-13.000MHZ-D4Y-T | Cut Tape | 1,429 | 1 |
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ABM3C-13.000MHZ-D4Y-T | Cut Tape | 1,435 | 1 |
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MMD DF18CC1-13.000MHZ-TCRYSTAL 13.0000MHZ 18PF SMD |
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DF18CC1-13.000MHZ-T | Reel | 1,000 | 1,000 |
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13000MHZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FV1206-1
Abstract: FV1206 HFCN-8400 FV-1206-1 HFCN-1300 HFCN-1320 HFCN-1600 HFCN-1810 HFCN-1910 HFCN-2100
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FV1206 FV1206-1 13000MHz HFCN-880+ HFCN-1300+ HFCN--13000 FV1206-1 FV1206 HFCN-8400 FV-1206-1 HFCN-1300 HFCN-1320 HFCN-1600 HFCN-1810 HFCN-1910 HFCN-2100 | |
GX4001Contextual Info: polyfet rf devices GX4001 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GX4001 1-3000Mhz GX4001 | |
GX4002Contextual Info: polyfet rf devices GX4002 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GX4002 1-3000Mhz GX4002 | |
GX3441Contextual Info: polyfet rf devices GX3441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GX3441 1-3000Mhz GX3441 | |
GP1441Contextual Info: polyfet rf devices GP1441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GP1441 1-3000Mhz GP1441 | |
GP2001Contextual Info: polyfet rf devices GP2001 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GP2001 1-3000Mhz GP2001 | |
Contextual Info: RF Inductors Coils Data Sheet 1 LQP02TN_02 Series 01005/0402 (inch/mm) General Film Thickness 0.1nH E-24 0.22mm Step max. Step Tight Tolerance Reflow RoHS OK c Dimensions c Packaging 0.2±0.02 Polarity Marking Code Packaging Minimum Quantity D ø180mm Paper Taping |
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LQP02TN 180mm 20000MHz 320mA 500MHz 18000MHz | |
LQP02TN
Abstract: LQP02TN*02 SERIES
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LQP02TN 180mm LQP02TN0N2B02p LQP02TN0N2C02p LQP02TN0N3B02p LQP02TN0N3C02p LQP02TN0N4B02p LQP02TN0N4C02p LQP02TN0N4S02p LQP02TN0N5B02p LQP02TN*02 SERIES | |
Contextual Info: RF Inductors Coils Data Sheet 1 LQP03TG_02 Series 0201/0603 (inch/mm) General Film Thickness 0.1nH E-12 0.33mm Step max. Step E-24 Tight Step Tolerance Reflow RoHS OK c Dimensions c Packaging 0.1 to 0.5nH 0.6 to 120nH Polarity Marking Colored Side Packaging |
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LQP03TG 330mm 180mm 120nH 500MHz 20000MHz 08termination | |
Contextual Info: RF Inductors Coils Data Sheet 1 LQP02TQ_02 Series 0402/01005 (mm/inch) General Film Thickness 0.1nH E-24 Hi 0.22mm Step max. Step Q Tight Tolerance Reflow RoHS OK c Dimensions c Packaging Code Packaging Minimum Quantity D ø180mm Paper taping 20000 B Packing in bulk |
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LQP02TQ 180mm LQP02TQ0N4B02p 500MHz 990mA 16600MHz LQP02TQ0N4C02p | |
GP2441Contextual Info: polyfet rf devices GP2441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GP2441 1-3000Mhz GP2441 | |
LQP03TG7N5H02
Abstract: LQP03TG6
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LQP03TG 180mm 330mm LQP03TG0N6B02p LQP03TG0N6C02p LQP03TG0N7B02p LQP03TG0N7C02p LQP03TG0N8B02p LQP03TG0N8C02p LQP03TG0N9B02p LQP03TG7N5H02 LQP03TG6 | |
GX2001Contextual Info: polyfet rf devices GX2001 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GX2001 1-3000Mhz GX2001 | |
Contextual Info: CENTRAL TECHNOLOGIES Manufacturer of Passive Components Catalog Page Table of Contents . . . . . . . . . . . . . . . . . . . . .i-v RF Magnetics . . . . . . . . . . . . . . . . . . . . .1-16 Power Magnetics . . . . . . . . . . . . . . . . .17-65 Transformers . . . . . . . . . . . . . . . . . . . . .67-77 |
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CAPACITOR TANTALUM 686D
Abstract: CTLQ1812NF military resistors catalog tv line transformer 22-35L smd zener diode color band LCD inverter 94v 0 TV flyback transformer pinout 9400MHz filter smd inductors 4.7uH 20A
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GP1001Contextual Info: polyfet rf devices GP1001 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GP1001 1-3000Mhz GP1001 | |
LQP03TG
Abstract: LQP03TG7N5H02 0.6nH
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LQP03TG 180mm 330mm LQP03TG0N6B02p LQP03TG0N6C02p LQP03TG0N7B02p LQP03TG0N7C02p LQP03TG0N8B02p LQP03TG0N8C02p LQP03TG0N9B02p LQP03TG7N5H02 0.6nH | |
GX2441Contextual Info: polyfet rf devices GX2441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GX2441 1-3000Mhz GX2441 | |
GX4441Contextual Info: polyfet rf devices GX4441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation |
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GX4441 1-3000Mhz GX4441 | |
Contextual Info: RF Inductors Coils Data Sheet 1 LQW04AN_00 Series 03015/0804 (inch/mm) Wound Thickness General (No Shield) E-12 E-24 0.45mm Step max. Step Reflow RoHS OK c Dimensions c Packaging 0.4±0.05 0.06 -0.03 +0.09 0.8±0.05 Code Packaging Minimum Quantity D ø180mm Paper Taping |
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LQW04AN 180mm LQW04AN1N1C00p 100MHz 990mA 250MHz LQW04AN1N1D00p 990termination | |
100-10L
Abstract: LQP02TQ LQP02TQ1N0C02
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LQP02TQ 180mm LQP02TQ0N4B02p LQP02TQ0N4C02p LQP02TQ0N5B02p LQP02TQ0N5C02p LQP02TQ0N6B02p LQP02TQ0N6C02p LQP02TQ0N7B02p LQP02TQ0N7C02p 100-10L LQP02TQ1N0C02 |