transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
|
Original
|
BLS6G2933S-130
BLS6G2933S-130
transistor d 1302
smd transistor 927
smd transistor equivalent table
Duroid 6006
sot922
radar circuit component
|
PDF
|
CWP50
Abstract: MMO36 CS35
Text: Phase Control Thyristor Chips Type CWP 7 - 08/12 CWP 8 - 08/12 CWP 8 - 08/12-CG CWP 16 - 12/16 CWP 21 - 12/16 CWP 22 - 12/16 CWP 25 - 12/16 CWP 35 - 08/12 CWP 41 - 12/18 CWP 50 - 12/18 CWP 55 - 12/18 CWP 71 - 12/18 CWP 130 - 12/18 CWP 180 - 12/18 CWP 341 - 12/18
|
Original
|
CS23-12/16
CS35-04/14
MCC44-08/18
MCC56-08/18
MCC95-08/18
MCC132-08/18
MCC162-08/18
MCC225-12/18
MCC312-12/18
MCC94-20/22
CWP50
MMO36
CS35
|
PDF
|
EIA-608
Abstract: 125H Z86129 Z86130 Z86131 Z86129-12PSC v-chip
Text: PRELIMINARY PRODUCT SPECIFICATION 1 Z86129/130/131 1 NTSC LINE 21 DECODER FEATURES Devices Speed MHz Pin Count/ Package Types Standard Temp. Range On-Screen Display & Closed Captioning Z86129 Z86130 Z86131 12 12 12 18-Pin DIP, SOIC 18-Pin DIP, SOIC 18-Pin DIP, SOIC
|
Original
|
Z86129/130/131
Z86129
Z86130
Z86131
18-Pin
18-Lead
DS96TEL0200
EIA-608
125H
Z86129
Z86130
Z86131
Z86129-12PSC
v-chip
|
PDF
|
CRYSTAL 32.768KHz 12.5PF 20PPM EPSON
Abstract: Z86129 125H Z86130 Z86131 schematic diagram of ctr flyback tv v-chip EIA-608 CM-501
Text: PRELIMINARY PRODUCT SPECIFICATION Z86129/130/131 NTSC LINE 21 DECODER FEATURES Devices Z86129 Z86130 Speed MHz 12 12 Pin Count/ Package Types 18-Pin DIP, SOIC 18-Pin DIP, SOIC Standard Temp. Range 0¡ to +70¡C 0¡ to +70¡C On-Screen Display Automatic Data Extraction
|
Original
|
Z86129/130/131
Z86129
Z86130
18-Pin
Z86131
Z86130
in-13)
CRYSTAL 32.768KHz 12.5PF 20PPM EPSON
Z86129
125H
Z86131
schematic diagram of ctr flyback tv
v-chip
EIA-608
CM-501
|
PDF
|
DBX 2155
Abstract: dbx 2151 DBX 2180 DBX 2150 2155 vca 2150a vca THAT2151 2150A LF351 op-amp application LF351 op-amp audio equalizer
Text: T H A T Corporation IC Voltage-Controlled Amplifiers THAT 2151, 2150A, 2155 APPLICATIONS No tR for ec o N m se ew m e 2 De end 18 sig ed 0/2 ns 18 1 FEATURES • Wide Dynamic Range: >116 dB • Faders • Wide Gain Range: >130 dB • Panners • Exponential (dB) Gain Control
|
Original
|
LF351
DBX 2155
dbx 2151
DBX 2180
DBX 2150
2155 vca
2150a vca
THAT2151
2150A
LF351 op-amp application
LF351 op-amp audio equalizer
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information DD 600 S 16 K4 61,5 screwing depth M8 max. 16 18 130 31,5 114 C1 C2 E1 E2 7 2,5 deep 2,5 deep 57 C1 C2 E1 E2 Feb.97 DD 600 S 16 K4 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
|
Original
|
|
PDF
|
K461
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information DD 600 S 16 K4 61,5 screwing depth M8 max. 16 18 130 31,5 114 C1 C2 E1 E2 7 2,5 deep 2,5 deep 57 C1 C2 E1 E2 Feb.97 DD 600 S 16 K4 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: G A D I E L E C T R I C : 116 Series SLCs Series / Case Size L & W Cap Cap (pF) Code 116 R .015 (.381) nom. 18 to 68 pF Tol. K, M 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 300 330 360 390 430 470 510
|
Original
|
116RGA180
100TT
116RGA200
116RGA220
116RGA240
116RGA270
|
PDF
|
IGBT FZ 1200 r12
Abstract: FZ800R12KF4 fz 1200 r12 kf 4 1G18
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
|
Original
|
A15/97
IGBT FZ 1200 r12
FZ800R12KF4
fz 1200 r12 kf 4
1G18
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
IGBT FZ 600 R12
Abstract: FZ1200R12KF4 IGBT FZ 1200 r12
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
|
Original
|
A15/97
IGBT FZ 600 R12
FZ1200R12KF4
IGBT FZ 1200 r12
|
PDF
|
IGBT 1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
IGBT FF 300 r12
Abstract: FF400R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
|
Original
|
A15/97
IGBT FF 300 r12
FF400R12KF4
|
PDF
|
|
|
IGBT FF 300 r12
Abstract: FF400R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
|
Original
|
A15/97
IGBT FF 300 r12
FF400R12KF4
|
PDF
|
FF600R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
|
Original
|
A13/97
FF600R12KF4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLC354 LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS SLCS116B – SEPTEMBER 1985 – REVISED FEBRUARY 1997 D D D D D D D D D D D Single- or Dual-Supply Operation Wide Range of Supply Voltages 1.4 V to 18 V Very Low Supply Current Drain 300 µA Typ at 5 V 130 µA Typ at 1.4 V
|
Original
|
TLC354
SLCS116B
LM339
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLC354 LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS SLCS116B – SEPTEMBER 1985 – REVISED FEBRUARY 1997 D D D D D D D D D D D Single- or Dual-Supply Operation Wide Range of Supply Voltages 1.4 V to 18 V Very Low Supply Current Drain 300 µA Typ at 5 V 130 µA Typ at 1.4 V
|
Original
|
TLC354
SLCS116B
LM339
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
|
Original
|
|
PDF
|
W001
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
|
Original
|
|
PDF
|
lm339 triangle
Abstract: No abstract text available
Text: TLC354 LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS SLCS116B – SEPTEMBER 1985 – REVISED FEBRUARY 1997 D D D D D D D D D D D Single- or Dual-Supply Operation Wide Range of Supply Voltages 1.4 V to 18 V Very Low Supply Current Drain 300 µA Typ at 5 V 130 µA Typ at 1.4 V
|
Original
|
TLC354
SLCS116B
LM339
lm339 triangle
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10 20 ce < -DIMN. B REF. i< TYP. J o * </> 1.1 .04 TERMINAL PIN. (0.64 /.025 SQ. FOR -PART NOS. PLATING & MATERIAL SEE CHARTS -DIMN. A REF. 18 TIPS ONLY -$-10 DIMN. F IMI TYP. (2.50*«Oa .098 *•“" AT DATUM Z (3.30 ±“ ) 130 IS 17 16 15 14 ffll 13 rr
|
OCR Scan
|
13XX8
047jpr
-3094-N
|
PDF
|
