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    13 TRANSISTOR SMD Search Results

    13 TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13 TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD BR 17

    Abstract: No abstract text available
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified 13.1 ID 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI45N06S3L-13 SMD BR 17 PDF

    3N06L13

    Abstract: No abstract text available
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 13.1 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI45N06S3L-13 PG-TO263-3-2 3N06L13 PDF

    3N06L13

    Abstract: Application Note ANPS071E ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified 13.1 ID 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 Application Note ANPS071E ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2 PDF

    3N06L13

    Abstract: ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 13.1 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2 PDF

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1 PDF

    65E6190

    Abstract: diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 IPP65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6


    Original     		IPx65R190E6 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 65E6190 diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r PDF

    65E6190

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6


    Original     		IPx65R190E6 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 65E6190 PDF

    "marking E1"

    Abstract: BFS17 BFS17R BFS17W
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1" PDF

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101 PDF

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor PDF

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PHPT61003NY OT669 LFPAK56) AEC-Q101 PDF

    MARKING SMD IC CODE 2100

    Abstract: TRANSISTOR SMD MARKING CODE 210 philips N7 PBSS5220V MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE OA
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 01 — 13 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PBSS5220V OT666 MARKING SMD IC CODE 2100 TRANSISTOR SMD MARKING CODE 210 philips N7 PBSS5220V MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE OA PDF

    2N06L13

    Abstract: ANPS071E BSPD30N06S2L-13 SPD30N06S2L-13
    Text: SPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 13 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD30N06S2L-13


    Original     		SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 ANPS071E BSPD30N06S2L-13 PDF

    2N06L13

    Abstract: INFINEON PART MARKING to252 BSPD30N06S2L-13 P-TO252 SPD30N06S2L-13
    Text: SPD30N06S2L-13 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 13 mΩ ID 30 A •=175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type SPD30N06S2L-13


    Original     		SPD30N06S2L-13 P-TO252 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 INFINEON PART MARKING to252 BSPD30N06S2L-13 P-TO252 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original     		PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2047 UHF power transistor Preliminary specification Supersedes data of 1997 Aug 26 File under Discrete Semiconductors, SC08b 1997 Nov 13 Philips Semiconductors Preliminary specification UHF power transistor BLV2047 PINNING - SOT468A


    Original     		BLV2047 SC08b BLV2047 OT468A SCA55 127067/00/02/pp12 PDF

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING


    Original     		M3D088 PMBTA92 PMBTA42. PMBTA92 MAM256 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP PDF

    qualified

    Abstract: MGD624
    Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.


    Original     		PMBT3906YS OT363 SC-88) PMBT3906YS OT363 SC-88 PMBT3904YS PMBT3946YPN AEC-Q101 qualified MGD624 PDF

    2N06L13

    Abstract: SM 71A diode BSPD30N06S2L-13
    Text: SPD30N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 13 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD30N06S2L-13 Package Ordering Code


    Original     		SPD30N06S2L-13 SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, 2N06L13 SM 71A diode BSPD30N06S2L-13 PDF

    2N03L13

    Abstract: 2N03L SPB42N03S2L-13 diode d21 Datasheet 2N03L13 INFINEON PART MARKING TRANSISTOR SMD MARKING CODE 42 SPI42N03S2L-13 SPP42N03S2L-13 F42A
    Text: SPI42N03S2L-13 SPP42N03S2L-13 OptiMOS Power-Transistor SPB42N03S2L-13 Product Summary Features • N-channel • Enhancement mode V DS 30 V R DS on ,max 12.9 mΩ ID 42 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance


    Original     		SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Q67042-S4034 2N03L13 2N03L13 2N03L SPB42N03S2L-13 diode d21 Datasheet 2N03L13 INFINEON PART MARKING TRANSISTOR SMD MARKING CODE 42 SPI42N03S2L-13 SPP42N03S2L-13 F42A PDF

    PMBT3906YS

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC
    Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.


    Original     		PMBT3906YS OT363 SC-88) PMBT3906YS SC-88 PMBT3904YS PMBT3946YPN AEC-Q101 TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC PDF