13 MHZ MOSFET Search Results

13 MHZ MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

13 MHZ MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CCD133ADC Abstract: ccd133 CCD133A fairchild ccd "Linear image sensor" CCD143A linear ccd radiation fairchild Text: CCD133A 1024-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 1024 x 1 photosite array 13µm x 13µm photosites on 13µm pitch High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity	Original	CCD133A 1024-Element 1024-photoelement CCD133A CCD133ADC ccd133 fairchild ccd "Linear image sensor" CCD143A linear ccd radiation fairchild	PDF
CCD153 Abstract: CCD153ADC ccd133 fairchild ccd water surface level element Fairchild Imaging CCD Contact image sensor fairchild CCD153A Text: CCD 153A 512-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 512 x 1 photosite array 13µm x 13µm photosites on 13µm pitch High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity	Original	512-Element CCD153A 512-photoelement CCD153 CCD153ADC ccd133 fairchild ccd water surface level element Fairchild Imaging CCD Contact image sensor fairchild	PDF
NEC 9001 Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)	Original	2SK2597 800-MHz NEC 9001 2SK2597 J549 NEC MOSFET PUSHPULL	PDF
ccd133 Abstract: CCD133ADC ccd board Circuit Schematic Diagram Electronic linear ccd radiation fairchild CCD143A CCD133A Fairchild Imaging CCD133DB ccd143 CCD Linear Image Sensor Text: CCD 133A 1024-Element High Speed Linear Image Sensor FEATURES • • • • • • • • • • 1024 x 1 photosite array µm pitch 13 µm x 13 µm photosites on 13µ High speed: up to 20 MHz data rate Enhanced spectral response Low dark signal High responsivity	Original	1024-Element CCD133A 1024-photoelement 133DC ccd133 CCD133ADC ccd board Circuit Schematic Diagram Electronic linear ccd radiation fairchild CCD143A Fairchild Imaging CCD133DB ccd143 CCD Linear Image Sensor	PDF
SD2903 Abstract: No abstract text available Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION	Original	SD2903 SD2903	PDF
variable capacitor Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:	Original	MS4280 MS4280 100pF 180pF 100pF, variable capacitor 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor	PDF
30pf variable capacitor Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:	Original	MS4080 MS4080 180pF 100pF, 100pF 206nH 30pf variable capacitor VARIABLE capacitor arco 463 capacitor 10uF/63V 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor	PDF
SD2903 Abstract: Dow Corning 140 M229 Text: SD2903  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION	Original	SD2903 SD2903 Dow Corning 140 M229	PDF
mosfet HF amplifier Abstract: SD1905 Text: SD1905 HF/VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI SD1905 is Designed for General Purpose Class-A,B Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 13 dB Typical at 200 MHz	Original	SD1905 SD1905 mosfet HF amplifier	PDF
Untitled Abstract: No abstract text available Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION	Original	SD2903 SD2903	PDF
Untitled Abstract: No abstract text available Text: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY	Original	DB-960-90W PD57060S DB-960-90W	PDF
SD2903 Abstract: No abstract text available Text: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS	Original	SD2903 SD2903	PDF
PD57060s Abstract: ATC100B DB-960-90W 930 diode smd C07 smd 6 pin TRANSISTOR SMD CODE te Text: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY	Original	DB-960-90W PD57060S DB-960-90W PD57060s ATC100B 930 diode smd C07 smd 6 pin TRANSISTOR SMD CODE te	PDF
tekelec 630 Abstract: AT27273 00-CHA-101 501 CHB SPECIFICATIONS tekelec VJ1206Y104KXAT 501-CHB-8R2 Tekelec TA 501 CHB diod cms Text: DB-960-60W 60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 925 - 960 MHz • 10:1 LOAD VSWR CAPABILITY	Original	DB-960-60W PD57070S DB-960-60W tekelec 630 AT27273 00-CHA-101 501 CHB SPECIFICATIONS tekelec VJ1206Y104KXAT 501-CHB-8R2 Tekelec TA 501 CHB diod cms	PDF

ATC100B Abstract: PD57045S DB-960-70W SUBSTRATE TEFLON-GLASS Er 2.55 SMD Transistor 30w ED135 Text: DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY	Original	DB-960-70W PD57045S DB-960-70W ATC100B PD57045S SUBSTRATE TEFLON-GLASS Er 2.55 SMD Transistor 30w ED135	PDF
DB-900-60W Abstract: PD57070S Text: DB-900-60W 60W / 26V / 869-894 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 869 - 894 MHz • 10:1 LOAD VSWR CAPABILITY	Original	DB-900-60W PD57070S DB-900-60W IS-54/-136 IS-95 PD57070S	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)	OCR Scan	NEM0995F06-30	PDF
NEC 9001 Abstract: NEC MOSFET PUSHPULL EM0995F06-30 Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)	OCR Scan	NEM0995F06-30 NEC 9001 NEC MOSFET PUSHPULL EM0995F06-30	PDF
VARIABLE capacitor Abstract: arco 462 capacitor 2943666661 Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz	OCR Scan	MS4280 206nH 206nH 150MHz MSC0894 VARIABLE capacitor arco 462 capacitor 2943666661	PDF
5 - 30pf variable capacitor Abstract: variable capacitor Text: Micmsemi • m m RF Products m 140 COMMERCE DRIVE Progress Powered by Technology MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz	OCR Scan	MS4080 Curr25" 206nH 206nH 150MHz MSC0891 5 - 30pf variable capacitor variable capacitor	PDF
Arco 423 Abstract: VARIABLE capacitor arco 462 capacitor Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz	OCR Scan	MS4280 206nH 206nH 150MHz MSC0894 Arco 423 VARIABLE capacitor arco 462 capacitor	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • • • PACKAGE DRAWING Unit: mm High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)	OCR Scan	2SK2597 800-M	PDF
5 - 30pf variable capacitor Abstract: variable capacitor 30pf variable capacitor Text: Micmsemi • m m RF Products m 140 COMMERCE DRIVE Progress Powered by Technology MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz	OCR Scan	MS4080 Current25" 206nH 206nH 150MHz MSC0891 5 - 30pf variable capacitor variable capacitor 30pf variable capacitor	PDF
NEC MOSFET PUSHPULL Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)	OCR Scan	2SK2597 800-MHz NEC MOSFET PUSHPULL	PDF

13 MHZ MOSFET Search Results

13 MHZ MOSFET Result Highlights (5)

13 MHZ MOSFET Datasheets Context Search

CCD133ADC

CCD153

NEC 9001

ccd133

SD2903

variable capacitor

30pf variable capacitor

SD2903

mosfet HF amplifier

Untitled

Untitled

SD2903

PD57060s

tekelec 630

ATC100B

DB-900-60W

Untitled

NEC 9001

VARIABLE capacitor

5 - 30pf variable capacitor

Arco 423

Untitled

5 - 30pf variable capacitor

NEC MOSFET PUSHPULL