power window motor 12v
Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Text: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping
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STB50NE10
STGD3NB60SD
STB9NB50
O-220
STP80NE03L-06
STB80o
STB80NF55L-06
OT-223
PowerSO-10TM
O-220
power window motor 12v
wiper motor 12v dc
PWM generator for IGBT
12v dc driver motor control mosfet
ELECTRONIC BALLAST 12v
window lift motor
rain sensor
"rain sensor"
12v dc motor igbt control
motor power window hall sensor
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2 anode igbt inverter circuit diagram
Abstract: IGBT control circuit for inverter power inverter circuit diagram circuit diagram of refrigerator pc929 pwm mosfet dc ac inverter ac dC converter circuit diagram 12v inverter circuit inverter circuit diagram 12V DC converter circuit diagram
Text: Application Note Photocoupler Motor Drive Circuit PC923X/PC924X DC + VCC O1 interface Anode + VCC1=12V + VCC2=12V O2 Cathode TTL, MCU GND U V W MOS-FET or IGBT LOAD Recommended Mode Bipolar Transistor PC942 MOS-FET / IGBT DC(-) PC923X or PC924X or PC928 or PC929
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PC923X/PC924X
PC942
PC923X
PC924X
PC928
PC929
12kHz
25kHz
PC928
50kHz
2 anode igbt inverter circuit diagram
IGBT control circuit for inverter
power inverter circuit diagram
circuit diagram of refrigerator
pc929
pwm mosfet dc ac inverter
ac dC converter circuit diagram
12v inverter circuit
inverter circuit diagram
12V DC converter circuit diagram
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TS16949
Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to
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ZXTP25012EFH
-65mV
ZXTN25012EFH
D-81541
TS16949
ZXTN25012EFH
ZXTP25012EFH
ZXTP25012EFHTA
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ZXTN25012EFH
Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to
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ZXTP25012EFH
-65mV
ZXTN25012EFH
D-81541
ZXTN25012EFH
ZXTP25012EFH
TS16949
ZXTP25012EFHTA
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marking 8A sot223
Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
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FZT717
OT223
FZT717TA
marking 8A sot223
sot223 transistor pinout
transistor pnp 12V 1A Continuous Current Peak
FZT717
FZT717TA
12v pnp transistor
zetex 320
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -2.5A Continuous Collector Current ICM = -10A Peak Pulse Current
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FMMT717
-17mV
-100mA.
625mW
FMMT617
AEC-Q101
DS33116
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FMMT717
Abstract: FMMT717TA
Text: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -2.5A Continuous Collector Current ICM = -10A Peak Pulse Current
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FMMT717
-17mV
-100mA.
625mW
FMMT617
AEC-Q101
DS33116
FMMT717
FMMT717TA
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ZXTN25012EFL
Abstract: TS16949 ZXTN25012EFLTA
Text: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse
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ZXTN25012EFL
350mW
ZXTN25012EFLTA
D-81541
ZXTN25012EFL
TS16949
ZXTN25012EFLTA
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GT25G102
Abstract: No abstract text available
Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G102
2-10S1C
GT25G102
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igbt flash
Abstract: GT20G102
Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
2-10S1C
igbt flash
GT20G102
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GT25G102
Abstract: No abstract text available
Text: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G102
2-10S2C
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high frequency welder circuit diagram
Abstract: pwm welder igbt welder APT9601 IC A 103 GF Transistor MJ 8004 APT9904 APTLGF280U120T an 503 hall sensor IGBT full bridge 1200
Text: APTLGF280U120T Zero Voltage switching Single switch NPT IGBT Power Module +15V POWER SUPPLY UNDERVOLTAGE LOCKOUT _ Q SIGNAL C2 E1 E2 HIGH FREQUENCY PROCESSING INH 0V GND C1 -15V ISOLATED AUXILIARY +12V DRIVER TRANSFORMER CIRCUIT E0 HIGH FREQUENCY FORCED START UP
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APTLGF280U120T
APTLGF280U120T
high frequency welder circuit diagram
pwm welder
igbt welder
APT9601
IC A 103 GF
Transistor MJ 8004
APT9904
an 503 hall sensor
IGBT full bridge 1200
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GT20G102
Abstract: No abstract text available
Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
2-10S2C
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GT25G101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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high frequency welder circuit diagram
Abstract: APT9601 pwm welder diode t25 4 d9 driver igbt 1200v 300A for induction igbt welder High Frequency Induction Heating IC A 103 GF isolated voltage sensor 1mhz Transistor MJ 8004
Text: APTLGF210U120T Zero Voltage switching Single switch NPT IGBT Power Module +15V POWER SUPPLY UNDERVOLTAGE LOCKOUT _ Q SIGNAL C2 E1 E2 HIGH FREQUENCY PROCESSING INH 0V GND C1 -15V ISOLATED AUXILIARY +12V DRIVER TRANSFORMER CIRCUIT E0 HIGH FREQUENCY FORCED START UP
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APTLGF210U120T
APTLGF210U120T
high frequency welder circuit diagram
APT9601
pwm welder
diode t25 4 d9
driver igbt 1200v 300A for induction
igbt welder
High Frequency Induction Heating
IC A 103 GF
isolated voltage sensor 1mhz
Transistor MJ 8004
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high frequency welder circuit diagram
Abstract: high frequency induction welder diode t25 4 d9
Text: APTLGF300U120T Zero Voltage switching Single switch NPT IGBT Power Module +15V POWER SUPPLY UNDERVOLTAGE LOCKOUT _ Q SIGNAL E1 E2 HIGH PROCESSING INH 0V GND C2 -15V ISOLATED AUXILIARY +12V C1 FREQUENCY DRIVER TRANSFORMER CIRCUIT E0 HIGH FREQUENCY FORCED START UP
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APTLGF300U120T
80kHz
APTLGF300U120T
high frequency welder circuit diagram
high frequency induction welder
diode t25 4 d9
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Untitled
Abstract: No abstract text available
Text: IGD1205W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: Absolute Maximum Ratings, TA = 25 ºC, VD = 12V or 15V, RG = 5⍀, unless otherwise noted. • Internal DC/DC Converter • Internal OptoCoupler • 30 kV/µS CMR
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IGD1205W
IGD1205W-12
IGD1205W-15
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gt25g101
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
2-10S2C
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PDF
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Untitled
Abstract: No abstract text available
Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G101
10S2C
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Untitled
Abstract: No abstract text available
Text: IGD1208W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: Absolute Maximum Ratings, TA = 25 ºC, VD = 12V or 15V, RG = 5⍀, unless otherwise noted. • Internal DC/DC Converter • Internal OptoCoupler • 30 kV/µS CMR
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IGD1208W
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PDF
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Untitled
Abstract: No abstract text available
Text: IGD1205W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: Absolute Maximum Ratings, TA = 25 ºC, VD = 12V or 15V, RG = 5⍀, unless otherwise noted. • Internal DC/DC Converter • Internal OptoCoupler • 30 kV/µS CMR
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IGD1205W
IGD1205W-12
IGD1205W-15
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PDF
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GT25G102
Abstract: No abstract text available
Text: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G102
2-10S2C
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PDF
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Untitled
Abstract: No abstract text available
Text: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT20G102
10S1C
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PDF
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GT25G102
Abstract: No abstract text available
Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT25G102
2-10S1C
GT25G102
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