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    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    NT1GC72B89A0NF

    Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
    Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency


    Original     		PDF NT1GC72B89A0NF NT2GC72B8PA0NF NT1GC72B89A1NF NT2GC72B8PA1NF PC3-8500 PC3-10600 DDR3-1066/1333 128Mx8 PC3-8500 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of


    Original     		PDF VL41D1G63B-K0/K9/F8S 1Gx72 204-PIN VL41D1G63B 512Mx8 204-pin 204-pin,

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx64

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL33B1K68F-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K68F 28-bit 240-pin 240-pin,

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D5763B-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D5763B is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This single rank memory module consists


    Original     		PDF VL41D5763B-K0/K9/F8S 256Mx72 204-PIN VL41D5763B 256Mx8 204-pin 204-pin,

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL43B1G63A-K0/K9/F8/E7S 1Gx72 204-PIN VL43B1G63A 512Mx8 28-bit 204-pin DDR3-800)

    micron ddr3

    Abstract: DDR3 timing diagram DDR3 model verilog codes Verilog DDR3 memory model micron memory model for ddr3 MT41J128M8 Verilog DDR memory model DDR3 "application note" DDR3 DQ flip flop IC
    Text: Maxim > Design Support > App Notes > T/E Carrier and Packetized > APP 5120 Keywords: DDR1, DDR3, jitter, buffer, TDMoP, TDM over packet, DDR, SDRAM, PDV, PSN, double data rate APPLICATION NOTE 5120 Aug 26, 2011 Using a DDR3 Memory Module with the DS34S132


    Original     		PDF DS34S132 DS34S132, 32-point DS34S132 256ms 32-port com/an5120 micron ddr3 DDR3 timing diagram DDR3 model verilog codes Verilog DDR3 memory model micron memory model for ddr3 MT41J128M8 Verilog DDR memory model DDR3 "application note" DDR3 DQ flip flop IC

    Untitled

    Abstract: No abstract text available
    Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GU6KB

    Untitled

    Abstract: No abstract text available
    Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU6KB

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    W631GU8KB15K

    Abstract: No abstract text available
    Text: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU8KB W631GU8KB15K

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GG6KB W632GG6KB15I

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM


    Original     		PDF VL41B5663A-K9S-F8S-E7S 256MX72 204-PIN VL41B5663A 128Mx8 204-pin A10/AP A12/BC#

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B1K63A-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL33B1K63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is four rank, consists of thirty-six CMOS 256Mx8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL33B1K63A-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K63A 256Mx8 28-bit 240-pin

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL47B1G63A-K0-K9-F8-E7S-S1 REV: 1.0 General Information 8GB 1Gx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B1G63A is a 1Gx64 DDR3 SDRAM high density SODIMM. This memory module is dual rank, consists of


    Original     		PDF VL47B1G63A-K0-K9-F8-E7S-S1 1Gx64 204-PIN VL47B1G63A 512Mx8 204-pin 204-pin, PC3-12800, PC3-10

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41B5263A-K9S/F8S/E7S-S1 REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC SO-UDIMM 204 PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin MLF


    Original     		PDF VL41B5263A-K9S/F8S/E7S-S1 512MX72 VL41B5263A 204-pin 204-pin, VN-121009

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: VL53B5263A-K9S-F8S-E7S REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5263A is a 512Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL53B5263A-K9S-F8S-E7S 512MX72 VL53B5263A 256Mx8 28-bit 244-pin 244-pin,

    AMPAL22V10

    Abstract: No abstract text available
    Text: A m P A L 2 2 V 1 0-1 5 24-Pin IM O X III7“ Program m able Array Logic P R E L IM IN A R Y Distinctive Characteristics • • • • • • • • • 15-ns perform ance Increased logic pow er — up to 22 inputs and 10 outputs Increased product term s — average 12 per output


    OCR Scan     		PDF 24-Pin 15-ns 28-pin WF022301 AMPAL22V10

    AM 22V10

    Abstract: Resistor Fuse 4.91 AMD 22V10 ampal
    Text: AmPAL*22V10 24-Pin IMOX Programmable Array Logic PAL • • Second-generation PAL architecture Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output Variable product term distribution improves ease of use


    OCR Scan     		PDF 22V10 24-Pin 28-pin SP0-300 FAM52 AmPAL22V10 AM 22V10 Resistor Fuse 4.91 AMD 22V10 ampal