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    5STP 12M6200

    Abstract: 12M6500
    Text: VDSM = 6500 V ITAVM = 1330 A ITRMS = 2080 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 5SYA1004-03 12M6500 12M6500 12M6200 12M5800 67xVDRM 11ing CH-5600 5STP 12M6200

    12M6500

    Abstract: abb s 212 ABB thyristor 5 5STP12M6500
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1330 A 2080 A 22000 A 1.20 V 0.600 mΩ Ω Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 12M6500 5SYA1004-03 12M6200 12M5800 CH-5600 12M6500 abb s 212 ABB thyristor 5 5STP12M6500

    12M6500

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 6500 ITAVM = 1200 ITRMS = 1880 ITSM = 22000 VT0 = 1.20 rT = 0.600 V A A A V mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA 1004-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 12M6500 12M6500 12M6200 12M5800 67xVDRM CH-5600