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    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


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    PDF 12M1721 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter


    Original
    PDF 12M1721 CH-5600

    12M1721

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original
    PDF 12M1721 CH-5600 12M1721

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original
    PDF 12M1721 CH-5600

    diode 5SLY

    Abstract: 817 diode 5SLY
    Text: Data Sheet, Doc. No. 5SYA 1688-01 12 01 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


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    PDF 12J1700 CH-5600 diode 5SLY 817 diode 5SLY

    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


    Original
    PDF CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1688-03 04 14 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original
    PDF 12J1700 CH-5600

    168802

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1688-02 11 05 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


    Original
    PDF 12J1700 170lated CH-5600 168802