5sya1636-01
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1200 Die size: 10.2 x 10.2 mm Doc. No. 5SYA1636-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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12J1200
5SYA1636-01
CH-5600
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Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter
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12J1200
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1200 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1636-00 July 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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12J1200
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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Original
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12J1200
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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Original
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PDF
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12J1200
CH-5600
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