12E1200 Search Results
12E1200 Price and Stock
Susumu Co Ltd CPA2512E1200FS-T10RES SMD 120 OHM 1% 16W 2512 |
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CPA2512E1200FS-T10 | Digi-Reel | 1,095 | 1 |
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CPA2512E1200FS-T10 | 871 |
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CPA2512E1200FS-T10 | Reel | 1,000 |
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Vishay Intertechnologies PHP02512E1200BBT1PHP02512 25PPM 120 0.1% B T1 - Tape and Reel (Alt: PHP02512E1200BBT1) |
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PHP02512E1200BBT1 | Reel | 16 Weeks | 1,000 |
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PHP02512E1200BBT1 |
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Vishay Intertechnologies PTN2512E1200BBT5Res Thin Film 2512 120Ohm 0.1% 2W ?25ppm/?C Molded T/R - Tape and Reel (Alt: PTN2512E1200BBT5) |
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PTN2512E1200BBT5 | Reel | 16 Weeks | 500 |
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Vishay Intertechnologies PHP02512E1200BBT5PHP02512 25PPM 120 0.1% B T5 - Tape and Reel (Alt: PHP02512E1200BBT5) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PHP02512E1200BBT5 | Reel | 16 Weeks | 500 |
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PHP02512E1200BBT5 |
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Vishay Intertechnologies PTN2512E1200BBTSRes Thin Film 2512 120Ohm 0.1% 2W ?25ppm/?C Molded T/R - Custom Tape W/Leader (Alt: PTN2512E1200BBTS) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PTN2512E1200BBTS | Tape w/Leader | 16 Weeks | 100 |
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12E1200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 |
Original |
12E1200 CH-5600 | |
Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 |
Original |
12E1200 CH-5600 | |
12E1200Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 |
Original |
12E1200 CH-5600 12E1200 | |
MJ86
Abstract: 57 A
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Original |
12H1280 CH-5600 MJ86 57 A | |
Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage |
Original |
12M1274 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions |
Original |
12M1252 5SYA1623-01 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
Original |
12H1280 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
Original |
12H1280 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions |
Original |
12M1273 5SYA1637-00 CH-5600 | |
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions |
Original |
12H1200 5SYA1638-01 CH-5600 |