Untitled
Abstract: No abstract text available
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AW
NSL12AW
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Untitled
Abstract: No abstract text available
Text: NSL35TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage
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NSL35TT1
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Untitled
Abstract: No abstract text available
Text: NSL12TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage
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NSL12TT1
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marking RJA
Abstract: No abstract text available
Text: NSL12AW Product Preview High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications 12 VOLTS 3.0 AMPS PNP TRANSISTOR Features: • • • • http://onsemi.com High Current Capability (3 A) High Power Handling (Up to 650 mW)
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NSL12AW
r14525
NSL12AW/D
marking RJA
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marking PD
Abstract: NSL12AW NSL12AWT1
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AW
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NSL12AW/D
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NSL12AW
NSL12AWT1
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C595C
Abstract: No abstract text available
Text: NSL05TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −5.0 Vdc Collector-Base Voltage
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NSL05TT1
C595C
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NSL12AWT1G
Abstract: No abstract text available
Text: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AWT1G
NSL12AW/D
NSL12AWT1G
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Untitled
Abstract: No abstract text available
Text: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AWT1G
NSL12AW/D
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NSL12AW
Abstract: NSL12AWT1 NSL12AWT1G
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)
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NSL12AW
NSL12AW/D
NSL12AW
NSL12AWT1
NSL12AWT1G
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Untitled
Abstract: No abstract text available
Text: NSL35TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage
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NSL35TT1
NSL35TT1/D
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NSL12TT1
Abstract: SMD310
Text: NSL12TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO –12 Vdc Collector-Base Voltage
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NSL12TT1
r14525
NSL12TT1/D
NSL12TT1
SMD310
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NSL35TT1
Abstract: SMD310
Text: NSL35TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO –35 Vdc Collector-Base Voltage
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NSL35TT1
r14525
NSL35TT1/D
NSL35TT1
SMD310
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NSL05TT1
Abstract: SMD310
Text: NSL05TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO –5.0 Vdc Collector-Base Voltage
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NSL05TT1
r14525
NSL05TT1/D
NSL05TT1
SMD310
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NSL05TT1
Abstract: SMD310
Text: NSL05TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −5.0 Vdc Collector-Base Voltage
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NSL05TT1
NSL05TT1/D
NSL05TT1
SMD310
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NSL12TT1
Abstract: SMD310
Text: NSL12TT1 Advance Information High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO –12
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NSL12TT1
r14525
NSL12TT1/D
NSL12TT1
SMD310
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NSL05TT1
Abstract: SMD310
Text: NSL05TT1 Advance Information High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO –5.0
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NSL05TT1
r14525
NSL05TT1/D
NSL05TT1
SMD310
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BC327 BC337 noise figure
Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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M1MA151AT1
M1MA151KT1
M1MA152AT1
M1MA152KT1
M1MA151WAT1
M1MA151WKT1
M1MA152WAT1
M1MA152WKT1
BAS16WT1
M1MA141KT1
BC327 BC337 noise figure
BC337
Transistor BC307b
MPS5172 "cross-reference"
BC237
BC307
BC212
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2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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M1MA151AT1
M1MA151KT1
M1MA152AT1
M1MA152KT1
M1MA151WAT1
M1MA151WKT1
M1MA152WAT1
M1MA152WKT1
BAS16WT1
M1MA141KT1
2N3906 Darlington transistor
BC337
MPS5172 "cross-reference"
low noise transistors bc638
transistor mpf102
LOW NOISE BC638
SOT-346 431
BC237
BC307
BC212
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2SC2240BL
Abstract: KT630A BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
Text: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P
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BFY41
BFR21
KT630A
BF156
SE7002
BSY79
2S0668
-2S0669
2SCB17
2SC2240BL
BF140
2SC2240GR
TMPT1653N4
KT630B
2SC1841
2SC1940
2SC2240-GR
2SC2389
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MM22
Abstract: SL2L MM24 2-56 UNC-2A MIL-C-28748 5row 160 PIN connector 3581jm
Text: MODELS MM22 / MM24 Vishay Dale Rack and Panel Connectors Military, MIL-C-28748/7/8 Qualified and Commercial Microminiature Rectangular with Optional Hoods FEATURES MMS • Qualified to MIL-C-28748/7/8 • Solder cup contacts • Dip solder contacts • Fixed and turnable screwlocks
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MIL-C-28748/7/8
MIL-C-28748/7/8
SK030
SK2030
SK2035
01-May-99
MM22
SL2L
MM24
2-56 UNC-2A
MIL-C-28748
5row 160 PIN connector
3581jm
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Untitled
Abstract: No abstract text available
Text: NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO
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Untitled
Abstract: No abstract text available
Text: NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO
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r14525
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LC324256P-80
Abstract: LC324256-10 LC321000P-80 LC321000AJ60 LC324256JL-80 LC321000-10 LC321000J-80 LC324256 LC324256J-80
Text: SANYO SEMICONDUCTOR CORP 35E D ?*n707b 000040? T T - U - 2 3 - / S r - & 'Z * h / 7 T 't f ù 'J l S - t ï If*' m * ¡Under development Sample shipment ; Forth quarter in 1990 Production delivery ¡Second quarter in 1991 CM OS D YN AM IC RAM - A c c e s s T im a :
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n707b
256KX4
LC321000-10/12
LC321000P-80
LC321000J-80/10/12
LC3210O0Z-80/10/12
LC321000AP-60/70/80
LC321000AJ-60/70/80
LC32100OAZ-6O/7O/8O
LC324256P-80
LC324256-10
LC321000AJ60
LC324256JL-80
LC321000-10
LC321000J-80
LC324256
LC324256J-80
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bc638-10
Abstract: BC559A BC559B BC559C BC560 BC560A BC560B BC560C BC636 BC636-10
Text: 1- J •- - . i _ . . . . . . ÇJ, TO-92 Plastic Package Tran«»tore PNP Maximum Ratings Type No. BC559A ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 30 30 5 S Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp 'c (W) (A) @Tc=25°(
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BC559A
O-92-4
BC559B
BC559C
BC560
O-92-1
BC638
bc638-10
BC560A
BC560B
BC560C
BC636
BC636-10
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