dallas ds1225y
Abstract: dallas ds 1225y EEPROM 2864 DS1225Y DS1225Y-150 2764 EEPROM DS1225 DS1225Y-170 DS1225Y-200 EEPROM 2864 CMOS
Text: DS 1225Y DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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OCR Scan
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DS1225Y
28-pin
A0-A12
DS1225Y
28-PIN
dallas ds1225y
dallas ds 1225y
EEPROM 2864
DS1225Y-150
2764 EEPROM
DS1225
DS1225Y-170
DS1225Y-200
EEPROM 2864 CMOS
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PDF
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DS1225Y
Abstract: No abstract text available
Text: DS 1225Y DALLAS SEMICONDUCTOR D S1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data is automatically protected during power loss • Directly replaces 8 K x 8 volatile static RAM or EEPROM 1 28 § VCC A12 I 2 27 § WE A7 I 3 26 g NC A6 I « 25 B A8
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OCR Scan
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1225Y
S1225Y
28-pin
Ebl413D
DS1225Y
28-PIN
2L1413Q
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IC 2864 eeprom
Abstract: DS1225Y
Text: D S 1225Y DALLAS SEMICONDUCTOR F E AT URE S D S 12 2 5 Y 64K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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OCR Scan
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1225Y
DS1225
28-pin
DS122SY
IC 2864 eeprom
DS1225Y
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PDF
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IM1225Y-150
Abstract: 1225Y-150 1225Y eprom Innovative
Text: INNOVATIVE IM1225Y-150 8K X 8 Nonvolatile SRAM FEATURES Data Retention in the absence of power • Pin configuration Automatic data protection during power failure · Data Retention over 10 years · Unlimited write cycles · Conventional SRAM write cycles ·
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Original
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IM1225Y-150
225mW
1225Y
IM1225Y-150
1225Y-150
1225Y eprom
Innovative
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PDF
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IC 2864 eeprom
Abstract: dallas ds 1225y dallas ds1225y ic 2864 eprom DS1225Y
Text: DS1225Y DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V c c NC 1 •-J VCC ro 1 A7 | 3 26 | NC A12 • Directly replaces 8K x 8 volatile static RAM or EEPROM 28 1 • I • Data is automatically protected during power loss
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OCR Scan
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DS1225Y
28-pin
Vcc11.
DS1225Y
IC 2864 eeprom
dallas ds 1225y
dallas ds1225y
ic 2864 eprom
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PDF
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DS1225Y
Abstract: No abstract text available
Text: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM
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OCR Scan
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DS1225Y
28-pin
DS1225Y
28-PIN
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PDF
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DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 • Data is automatically protected during power loss • Low-power CMOS VCC A12 | 2 27 1 WE A7 1 3 26 1 NC A6 1 4 25 1 A8 A5 1 5 « A9
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OCR Scan
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DS1225Y
28-pin
Vcc11.
DS1225Y
28-PIN
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PDF
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DS1225Y
Abstract: No abstract text available
Text: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC f i 1 28 g VCC A12 1 2 27 § WE A7 1 3 26 g NC A6 1 25 g
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OCR Scan
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DS1225Y
2bl413D
DS1225Y
28-PIN
2bl4130
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PDF
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dallas ds80c320 high speed micro guide
Abstract: DS1640
Text: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .
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dallas ds80c320 high speed micro guide
Abstract: transistor bf 175 DS1640
Text: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u
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ELAP CM 72
Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3
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