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    Catalog Datasheet MFG & Type Document Tags PDF

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    Abstract: No abstract text available
    Text: PRELIMINARY N-Channel Enhancement Mode Field Transistor FEATURES • 1 2 0 V , 1 0 A , R ds on =120rrQ @V gs=5V • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES


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    O-220 O-263 to-263 t0-220 CEP1012L/CEB1012L PDF