2SC4467
Abstract: transistor 2SC4467 2SA1694
Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A
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2SC4467
2SA1694)
MT-100
10max
50min
20typ
200typ
100ms
2SC4467
transistor 2SC4467
2SA1694
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PDF
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2SC4467
Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A
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2SC4467
2SA1694)
MT-100
10max
50min
20typ
200typ
100ms
120min
2SC4467
2SA1694
2sa1694 2sc4467
DSA0016509
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PDF
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2sd2083
Abstract: transistor 2sd2083 2sb1383
Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max
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2SD2083
2SB1383)
10max
Pulse40)
120min
2000min
20typ
340typ
2sd2083
transistor 2sd2083
2sb1383
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PDF
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2SC4153
Abstract: 2SC4153 equivalent FM20 100X100X2
Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C
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2SC4153
120min
30typ
110typ
ulse14)
100max
O220F)
50x50x2
2SC4153
2SC4153 equivalent
FM20
100X100X2
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PDF
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2SC3835
Abstract: DSA0016507
Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max
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2SC3835
100max
120min
Pulse14)
30typ
110typ
MT-100
2SC3835
DSA0016507
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PDF
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2SC4153
Abstract: FM20
Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C
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2SC4153
120min
30typ
110typ
100x100x2
150x150x2
50x50x2
2SC4153
FM20
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PDF
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2SD2045
Abstract: No abstract text available
Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max
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2SD2045
10max
120min
Pulse10)
2000min
50typ
70typ
2SD2045
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PDF
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2SD2082
Abstract: 2SB1382
Text: 2SD2082 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1382 Application : Driver for Solenoid, Motor and General Purpose Conditions V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA 120min
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2SD2082
2SB1382)
FM100
10max
Pulse26)
120min
2000min
20typ
210typ
2SD2082
2SB1382
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PDF
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2SD1769
Abstract: No abstract text available
Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)
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2SD1769
MT-25
10max
20max
Pulse10)
100typ
2SD1769
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PDF
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2SD2015
Abstract: FM20
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C
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2SD2015
120min
2000min
40typ
10max
O220F)
2SD2015
FM20
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PDF
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2SD2015
Abstract: FM20 w605
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ
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2SD2015
2000min
40typ
100ms
150x150x2
50x50x2
2SD2015
FM20
w605
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PDF
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2SB1258
Abstract: 2SD1785 FM20 IE1A
Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)
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2SD1785
2SB1258)
Pulse10)
10max
120min
2000min
100typ
70typ
O220F)
2SB1258
2SD1785
FM20
IE1A
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PDF
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2SB1259
Abstract: 2SD2081 FM20 12v dc to 6v dc
Text: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)
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2SD2081
2SB1259)
10max
Pulse15)
120min
2000min
60typ
95typ
2SB1259
2SD2081
FM20
12v dc to 6v dc
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PDF
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2SD1785
Abstract: 2SB1258 FM20
Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)
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2SD1785
2SB1258)
Pulse10)
10max
120min
2000min
100typ
70typ
2SD1785
2SB1258
FM20
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PDF
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2sd2083
Abstract: 2sb1383
Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max
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2SD2083
2SB1383)
10max
Pulse40)
120min
2000min
20typ
340typ
MT-100
2sd2083
2sb1383
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PDF
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25C1252
Abstract: TE 8802
Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A
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2SC3834
Pulse14)
100max
120min
30typ
110typ
MT-25
25C1252
TE 8802
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PDF
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2SD1769
Abstract: No abstract text available
Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)
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2SD1769
MT-25
10max
20max
Pulse10)
100typ
2SD1769
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PDF
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2SC3834
Abstract: transistor 1022
Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A
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2SC3834
100max
120min
Pulse14)
30typ
110typ
MT-25
2SC3834
transistor 1022
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PDF
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resistor 90k
Abstract: No abstract text available
Text: FEATURES The T1206 resistor chips on Ceramic are designed for surface-mount applications. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. • Small chip size 120mil x 60mil
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T1206
MIL-STD-883.
120mil
60mil
MIL-R-55342/07
MIL-STD-202,
50ppm
T120632500
resistor 90k
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistor 2SC4153 ICBO IEBO V BR CEO hFE VCE (sat) VBE (sat) fT COB (Ta=25ºC) Unit µA µA V Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 16.7 IC (A) 3 VBB1 (V)
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2SC4153
100max
120min
30typ
110typ
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PDF
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2SC5100
Abstract: 2SA1908 DSA0016511
Text: 2SC5100 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1908 hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A
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2SC5100
2SA1908)
50min
13typ
50typ
32typ
120min
10max
FM100
2SC5100
2SA1908
DSA0016511
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PDF
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2SD2045
Abstract: No abstract text available
Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max
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Original
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2SD2045
10max
120min
Pulse10)
2000min
50typ
70typ
2SD2045
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PDF
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Untitled
Abstract: No abstract text available
Text: TaN The T1206 resistor chips on Ceramic are designed for surface-mount applications. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. Small chip size 120mil x 60mil
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OCR Scan
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T1206
MIL-STD-883.
120mil
60mil
R-55342/07
MIL-STD-202,
50ppm
T1206-
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PDF
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CET9435A
Abstract: No abstract text available
Text: CET9435A P R E L I M I MARY P-Channel Enhancement Mode MOSFET FEATURES • -3 0 V , -5 .3 A , RDS ON =60mi2 R ds(on)=120mi2 @ V gs=-1 0V. @ V gs =-4.5V. • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.
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OCR Scan
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CET9435A
60mC2
120mQ
OT-223
CET9435A
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PDF
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