Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2031M16
NESG2031M16
NESG2031M16-T3
PU10394EJ01V0DS
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.
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500mA
250mA
200mA
L2SA2030M3T5G
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PDF
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Switching diode 80V 200mA
Abstract: ROHM 1SS390 MARKING 68B9 47B diode
Text: EMD2 1208 size ROHM is a semiconductor manufacturer and has a series of the world's smallest packages! Surface Mounted package Extremely popular for portable products Double-terminal Diodes You can make your products lighter and smaller with it! Flat, thin, and
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Original
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1SS390
1SS400
RB520S-30
RB521S-30
RB751S-40
A/80V
A/30V
30mA/40V
40msec
Switching diode 80V 200mA
ROHM 1SS390 MARKING
68B9
47B diode
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PDF
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VISHAY DATE CODE
Abstract: 3 pins trimmer resistor 10K ohm marking 722 RJ12 1208LB
Text: 1208 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers 1 1/4 Inch Rectilinear, RJ12 Style - Industrial Trimmer FEATURES • Temperature Coefficient of Resistance TCR : ± 20ppm/°C Maximum3 (– 55°C to + 150°C Ref. @ + 25°C);
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Original
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20ppm/
50ppm/
28-Aug-02
VISHAY DATE CODE
3 pins trimmer resistor 10K ohm
marking 722
RJ12
1208LB
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.
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Original
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500mA
250mA
200mA
L2SA2030M3T5G
S-L2SA2030M3T5G
AEC-Q101
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PDF
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Vishay DaTE CODE
Abstract: No abstract text available
Text: 1208 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers 1 1/4 Inch Rectilinear, RJ12 Style - Industrial Trimmer FEATURES • Temperature Coefficient of Resistance TCR : ± 20ppm/°C Maximum3 (– 55°C to + 150°C Ref. @ + 25°C);
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Original
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20ppm/
50ppm/
08-Apr-05
Vishay DaTE CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.
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Original
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500mA
250mA
200mA
L2SA2030M3T5G
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PDF
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RJ12 pin out
Abstract: Vishay DaTE CODE 3 pins trimmer resistor 10K ohm marking 722 RJ12
Text: 1208 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers 1 1/4 Inch Rectilinear, RJ12 Style - Industrial Trimmer FEATURES • Temperature Coefficient of Resistance TCR : ± 20ppm/°C Maximum3 (– 55°C to + 150°C Ref. @ + 25°C);
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Original
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20ppm/
50ppm/
18-Jul-08
RJ12 pin out
Vishay DaTE CODE
3 pins trimmer resistor 10K ohm
marking 722
RJ12
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PDF
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Untitled
Abstract: No abstract text available
Text: 1208 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers 1 1/4 Inch Rectilinear, RJ12 Style - Industrial Trimmer FEATURES • Temperature Coefficient of Resistance TCR : ± 20ppm/°C Max.3 (– 55°C to + 150°C Ref. @ + 25°C);
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Original
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20ppm/
50ppm/
Leads13mm)
02-Jul-01
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG3032M14 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification
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Original
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NESG3032M14
R09DS0048EJ0300
NESG3032M14
NESG3032M14-A
NESG3032M14-T3
NESG3032M14-T3-A
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PDF
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NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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Original
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NESG3031M14
NESG3031M1conductor
NEC JAPAN
NESG3031M14
NESG3031M14-T3
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.
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Original
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500mA
250mA
-200mA
-10mA
L2SA2030M3T5G
OT-723
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PDF
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Z181
Abstract: No abstract text available
Text: STANDARD SERIES D56ZOV181RA1R3 MAIDA STYLE NUMBER Electrical Specifications MAIDA ITEM NUMBER 01-1208 Physical Specifications Continuous AC Voltage 180 VAC Lead Style Continuous DC Voltage 230 VDC X Nominal 0.16 in. 200 uA X Tolerance 0.04 in. Low Varistor Voltage Limit
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D56ZOV181RA1R3
005M2
Z181
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M16
NESG2021M16-A
M8E0904E
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PDF
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Untitled
Abstract: No abstract text available
Text: LPC4357 Developer’s Kit - User’s Guide Copyright 2014 Embedded Artists AB LPC4357 Developer’s Kit User’s Guide Get Up-and-Running Quickly and Start Developing Your Application On Day 1! EA2-USG-1208 Rev A LPC4357 Developer’s Kit - User’s Guide
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Original
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LPC4357
EA2-USG-1208
ddi0403c/index
ddi0439c/index
LPC2000
com/group/lpc2000/
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M16
NESG2101M16
PU10395EJ03V0DS
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification
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Original
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NESG3033M14
R09DS0049EJ0300
NESG3033M14
NESG3032M14.
NESG3033M14-A
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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Original
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NESG4030M14
NESG4030M14
NESG4030M14-A
NESG4030M14-T3
NESG4030M14-T3-A
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PDF
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2SC5800
Abstract: NESG2046M33 NEC JAPAN IC
Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor
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PA869TD
NESG2046M33,
2SC5800)
S21e2
NESG2046M33
2SC5800
2SC5800
NESG2046M33
NEC JAPAN IC
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PDF
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NEC JAPAN
Abstract: NESG2021M16 NESG2021M16-T3
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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Original
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NESG2021M16
NEC JAPAN
NESG2021M16
NESG2021M16-T3
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification
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Original
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NESG3033M14
NESG3033M14
NESG3032M14.
R09DS0049EJ0300
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
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PDF
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Untitled
Abstract: No abstract text available
Text: SDS power choke coil EU features • Marking: Black body color • Products with lead-free terminations meet EU RoHS and China RoHS requirements 0804, 0805, 1003, 1005 0906, 0908 101 1 A Marking: Pin. 1 Side 101 A C F B C D F F' E E E E W 3.0 1205, 1206, 1208
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SDS0804
SDS1003
SDS1005
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PDF
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SDS1208
Abstract: SDS0804 SDS1206TTEB391
Text: SDS power choke coils EU features • Marking: Black body color • Products with lead-free terminations meet EU RoHS and China RoHS requirements 0804, 0805, 1003, 1005 0906, 0908 1 101 A Marking: Pin. 1 Side 101 A C F B C D F F' E E E E W 3.0 1205, 1206, 1208
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SDS0804
SDS1003
SDS1005
SDS1208
SDS0804
SDS1206TTEB391
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PDF
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sds1206
Abstract: No abstract text available
Text: SDS power choke coils EU features • Marking: Black body color • Products with lead-free terminations meet EU RoHS and China RoHS requirements 0804, 0805, 1003, 1005 0906, 0908 101 1 A Marking: Pin. 1 Side 101 A C F B C D F F' E E E E W 3.0 1205, 1206, 1208
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SDS0804
SDS0805
sds1206
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PDF
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