1202 TRANSISTOR Search Results
1202 TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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V62/21612-02XE |
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Enhanced product, 40-V, bidirectional, ultraprecise current sense amplifier with picoamp IB & EN 8-SOT-23-THIN -55 to 150 |
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LP395Z/LFT1 |
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Ultra Reliable Power Transistor 3-TO-92 |
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LM395T/NOPB |
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Ultra Reliable Power Transistor 3-TO-220 0 to 125 |
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ULN2003ANS |
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High-Voltage, High-Current Darlington Transistor Arrays 16-SO |
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ULQ2003ADRG4 |
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Darlington Transistor Arrays 16-SOIC |
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1202 TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1202 transistor
Abstract: Opto-Sensor transistor 1202 photo transistor photo interrupter 5mm 24V IR Sensor Aleph Aleph Opto-Sensor schematic photo sensor OJ-1202
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OCR Scan |
OJ-1202/OJ-1302 OJ-13D2 OJ-1202 0394inches) 1202 transistor Opto-Sensor transistor 1202 photo transistor photo interrupter 5mm 24V IR Sensor Aleph Aleph Opto-Sensor schematic photo sensor OJ-1202 | |
KSR1202
Abstract: KSR2202
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OCR Scan |
KSR2202 KSR1202 O-92S -10nA, KSR1202 KSR2202 | |
Contextual Info: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =10, R2=10K£1) • C om plem ent to KSR 1202 ABSOLUTE MAXIMUM RATINGS (TA=25°C) |
OCR Scan |
KSR2202 | |
Contextual Info: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL DATA 2 SA 1202 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1202) 4.6MAX. Unit in mm 1.6MAX. 1.7MAX. 0.4 +0.05 PO W ER AM PLIFIER APPLICATIONS VOLTAGE AM PLIFIER APPLICATIONS • • Suitable for driver of 30~35 W atts Audio Amplifier |
OCR Scan |
2SA1202) 2SC2882 250mm* | |
C4570
Abstract: AAAM SOT23-6 AAAM MAX4541 MAX4541CUA MAX4542 MAX4543 MAX4544
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MAX4543/MAX4544 MAX323/MAX324/MAX325 MAX4541/42/43 OT23-8 MAX4544 OT23-6 MAX4541 MAX4544 C4570 AAAM SOT23-6 AAAM MAX4541CUA MAX4542 MAX4543 | |
SOT23-6 AAAEContextual Info: 19-1202; Rev 2; 10/01 Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches _Applications _Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low RON: 60Ω max 33Ω typ RON Matching Between Channels: 2Ω max |
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MAX4541 MAX4544 100pA 150ns 100ns MAX4541 MAX4541/MAX4542/MAX4543 MAX4544 SOT23-6 AAAE | |
MAX4544EKA-T
Abstract: AAAM AAAM SOT23-6 MAX4541 MAX4541CUA MAX4542 MAX4543 MAX4544 SOT23-6 AAAE
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MAX4543/MAX4544 MAX323/MAX324/MAX325 MAX4541/42/43 OT23-8 MAX4544 OT23-6 MAX454_ MAX4541 MAX4544 MAX4544EKA-T AAAM AAAM SOT23-6 MAX4541CUA MAX4542 MAX4543 SOT23-6 AAAE | |
Contextual Info: 1713-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq40M | |
Contextual Info: SL3ICS1002/1202 UCODE G2XM and G2XL Rev. 3.8 — 11 November 2013 139038 Product data sheet COMPANY PUBLIC 1. General description The UHF EPCglobal Generation 2 standard allows the commercialized provision of mass adoption of UHF RFID technology for passive smart tags and labels. Main fields of |
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SL3ICS1002/1202 | |
EBV8
Abstract: RFID tag eeprom G2XM EC88 NXP EPC UCODE G2X NXP UCODE G2XM C source code EPCglobal crc-16 implementation SOT886.t1.t4 sot1122
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SL3ICS1002/1202 EBV8 RFID tag eeprom G2XM EC88 NXP EPC UCODE G2X NXP UCODE G2XM C source code EPCglobal crc-16 implementation SOT886.t1.t4 sot1122 | |
114406
Abstract: LM1202
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OCR Scan |
LM1202 LM1202 114406 | |
NXP G2XM EPC
Abstract: G2XM NXP EPC UCODE G2X NXP UCODE G2XM J122 transistor SOT1040AB2 SL3S1002FTT sot1122 SL3S1202FTB1 SOT-1122
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SL3ICS1002/1202 NXP G2XM EPC G2XM NXP EPC UCODE G2X NXP UCODE G2XM J122 transistor SOT1040AB2 SL3S1002FTT sot1122 SL3S1202FTB1 SOT-1122 | |
RFID preamble source code
Abstract: crc5 calculation EN330 G2XM impedance
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SL3ICS1002/1202 RFID preamble source code crc5 calculation EN330 G2XM impedance | |
Contextual Info: SL3ICS1002/1202 UCODE G2XM and G2XL Rev. 3.6 — 10 March 2011 139036 Product data sheet COMPANY PUBLIC 1. General description The UHF EPCglobal Generation 2 standard allows the commercialized provision of mass adoption of UHF RFID technology for passive smart tags and labels. Main fields of |
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SL3ICS1002/1202 | |
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G2XM impedance
Abstract: SL3S1002FTT SL3ICS10 nxp rfid CRC16 15962 RFID protocol SOT1040 FM0 encoder IC SL3ICS1202
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SL3ICS1002/1202 G2XM impedance SL3S1002FTT SL3ICS10 nxp rfid CRC16 15962 RFID protocol SOT1040 FM0 encoder IC SL3ICS1202 | |
Contextual Info: 1716-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq40M req40M | |
HM62W4100HC
Abstract: HM62W4100HCJP-10 HM62W4100HCLJP-10 Hitachi DSA00358
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HM62W4100HC ADE-203-1202 400-mil 32-pin Directl2100 HM62W4100HCJP-10 HM62W4100HCLJP-10 Hitachi DSA00358 | |
Contextual Info: 1717-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq60M | |
Contextual Info: 1714-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq40M | |
Contextual Info: 1718-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq40M req40M | |
AAAM SOT23-6
Abstract: MAX4541 MAX4541CUA MAX4542 MAX4543 MAX4544 SOT23-6 AAAE
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MAX4543/MAX4544 MAX323/MAX324/MAX325 MAX4541/42/43 OT23-8 MAX4544 OT23-6 MAX4541 MAX4544 AAAM SOT23-6 MAX4541CUA MAX4542 MAX4543 SOT23-6 AAAE | |
L016
Abstract: Z86L82 Z86L85 Z86L88
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Z86L82/85/88 28-Pin PS009007-1202 L016 Z86L82 Z86L85 Z86L88 | |
Contextual Info: 1711-1202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq60M | |
Contextual Info: Z86L825/826/827 20-Pin Low-Voltage IR Microcontrollers Preliminary Product Specification PS008806-1202 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition |
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Z86L825/826/827 20-Pin PS008806-1202 |