M81738FP
Abstract: half bridge driver
Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES Floating supply voltage up to 1200V Low quiescent power supply current
|
Original
|
M81738FP
M81738FP
24pin
half bridge driver
|
PDF
|
M81019FP
Abstract: M81738FP M81738 M81019 inverter igbt circuit diagrams in bridge
Text: PRELIMINARY < HVIC > M81738FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81738FP is 1200V high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ●Floating supply voltage up to 1200V ● Low quiescent power supply current
|
Original
|
M81738FP
M81738FP
24pin
M81019FP
M81738
M81019
inverter igbt circuit diagrams in bridge
|
PDF
|
1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET
|
Original
|
000-1200V
IXFB30N120P
IXFL30N120P
IXFN30N120P
IXFL32N120P
IXFN32N120P
PluS220
IXFV110N10PS
1200 volt mosfet
1000 volt mosfet
mosfet 300 volt
HiperFET
IXFN38N100
sot 227b diode fast
transistor polar
2R4N120P
IXFN44N100P
IXFB44N100P
|
PDF
|
M81019FP
Abstract: m81019 dv/dt HVIC high voltage diodes Inverter high voltage power transistor Driver high side igbt 1200V Half Bridge Driver micro inverter
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V
|
Original
|
M81019FP
M81019FP
24-Lead
24P2Q-A
SSOP24-P-300-0
m81019
dv/dt HVIC
high voltage diodes
Inverter high voltage power transistor
Driver high side igbt 1200V
Half Bridge Driver
micro inverter
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION TOP VIEW 24 NC 1 FEATURES ¡Floating supply voltage up to 1200V
|
Original
|
M81019FP
M81019FP
24-Lead
24P2Q-A
SSOP24-P-300-0
|
PDF
|
5n120
Abstract: diode zener 22A STP5N120 JESD97
Text: STP5N120 N-channel 1200V - 2.8Ω - 4.4A - TO-220 Zener - protected SuperMESH Power MOSFET TARGET SPECIFICATION Features Type VDSS RDS on ID PW STP5N120 1200V < 3.5 Ω 4.4A 160W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability
|
Original
|
STP5N120
O-220
5n120
diode zener 22A
STP5N120
JESD97
|
PDF
|
JESD97
Abstract: STP1N120 P1N120
Text: STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PW STP1N120 1200V < 38Ω 500mA 45W • 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability
|
Original
|
STP1N120
500mA
O-220
500mA
JESD97
STP1N120
P1N120
|
PDF
|
MOSFET 1200v 3a
Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Text: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TL11CT3AG
|
PDF
|
800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM55CT3AG
800V 40A mosfet
mosfet 1200V 40A
MOSFET 40A 600V
APTMC60TLM55CT3AG
|
PDF
|
SiC IGBT High Power Modules
Abstract: SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet
Text: Product Brief main Features 1200V IGBT 4 n n n n THe neW 1200V IGBT 4 generation combined with the improved emitter Controlled diode from Infineon provides three optimized chip versions for low, medium and high power IGBT modules. These chips are designed to the needs
|
Original
|
B133-H9049-G2-X-7600
SiC IGBT High Power Modules
SiC JFET
SiC-JFET
infineon power cycling
ups high power FET Transistor
"silicon carbide" FET
silicon carbide JFET
high power FET Transistor for ups
infineon igbt power solar inverter
silicon carbide j-fet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM20CT3AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TLM20CT3AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •
|
Original
|
APTMC60TL11CT3AG
|
PDF
|
|
|
SiC POWER MOSFET
Abstract: sic MOSFET APTMC60TLM14CAG
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
|
Original
|
APTMC60TLM14CAG
SiC POWER MOSFET
sic MOSFET
APTMC60TLM14CAG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
|
Original
|
APTMC60TLM14CAG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
|
Original
|
APTMC60TLM14CAG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC120AM08CD3AG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 10mΩ max @ Tj = 25°C ID = 260A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
|
Original
|
APTMC120AM08CD3AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC120AM08CD3AG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 7.5mΩ typ @ Tj = 25°C ID = 270A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
|
Original
|
APTMC120AM08CD3AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC120AM08CD3AG VDSS = 1200V RDSon = 8mΩ typ @ Tj = 25°C ID = 250A @ Tc = 25°C Phase leg MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
|
Original
|
APTMC120AM08CD3AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
|
Original
|
APTMC120TAM17CTPAG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
|
Original
|
APTMC120TAM33CTPAG
|
PDF
|
bridge rectifier diode 500V
Abstract: Rectifier Diode 20A Vrrm 500V
Text: APTM50HM75FRT Full – Bridge With Input diode bridge MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C VRRM = 1200V IFAV25 = 45A Application • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Features
|
Original
|
APTM50HM75FRT
IFAV25
bridge rectifier diode 500V
Rectifier Diode 20A Vrrm 500V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET
|
Original
|
APTMC120AM12CT3AG
|
PDF
|
