IGB03N120H2
Abstract: Mar03 IGP03N120H2 IGW03N120H2
Text: 1200V IGBT IGW03N120H2 IGB03N120H2 IGP03N120H2 • Designed for: SMPS Lamp Ballast ZVS-Converter • 2nd generation HighSpeed- Technology for 1200V applications offers: - tight parameter distribution - temperature stable behaviour - parallel switching capability
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IGW03N120H2
IGB03N120H2
IGP03N120H2
IGx03F120
O-247
O-220
O-263
IGB03N120H2
Mar03
IGP03N120H2
IGW03N120H2
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IKP03N120H2
Abstract: IKB03N120H2 IKW03N120H2
Text: 1200V IGBT IKW03N120H2 IKB03N120H2 IKP03N120H2 • Designed for: SMPS Lamp Ballast ZVS-Converter • 2nd generation HighSpeed- Technology for 1200V applications offers: - tight parameter distribution - temperature stable behaviour - parallel switching capability
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IKW03N120H2
IKB03N120H2
IKP03N120H2
IKx03F120
O-247
O-220
O-263
IKP03N120H2
IKB03N120H2
IKW03N120H2
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igd-1-ep
Abstract: IGBT 1200V 1 GBT 400 A 1200V IHD 660
Text: IGBT Driver Boards IGBT Treiber control channels interface type V DC average/ peak v ISO V ]GM A size POUT W by for modules mounting mm*mm outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1
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sc1700
igd-1-ep
IGBT 1200V
1 GBT 400 A 1200V
IHD 660
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IGD-1-EP515
Abstract: IGD-1-DT515 IGD-1-DT2
Text: Click on outline no. IGBT Driver Boards V DC control type channels interface average/ peak V ISO I GM POUT size V A W mm*mm for modules outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1 ±8
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140x130
140x190
121700-240F-TO
IGD-1-EP515
1200/1700-440F-TO
1200/1700-180W-TO
1200/1700-410W-TO
IGD-1-EP515
IGD-1-DT515
IGD-1-DT2
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SIDC03D120H6
Abstract: No abstract text available
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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SIDC03D120H6
Q67050-A4156A001
4372S,
SIDC03D120H6
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1200v 3A
Abstract: SIDC03D120H6
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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SIDC03D120H6
Q67050-A4156A001
4372S,
1200v 3A
SIDC03D120H6
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MOSFET 1200v 3a
Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Text: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with
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GB05XP120K
Abstract: ntc 0833 igbt 50v 3a w306
Text: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27168
GB05XP120K
12-Mar-07
GB05XP120K
ntc 0833
igbt 50v 3a
w306
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DT80A
Abstract: No abstract text available
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF A This chip is used for:
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SIDC03D120H6
Q67050-A4156sawn
4372S,
DT80A
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A001
Abstract: SIDC03D120H6
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF A This chip is used for:
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SIDC03D120H6
Q67050-A4156sawn
4372S,
A001
SIDC03D120H6
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2N120CN
Abstract: HGT1S2N120CN HGT1S2N120CNS9A HGTP2N120CN LD26 RHRD4120 TB334 igbt spice igbt spice model
Text: HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description • 13A, 1200V, TC = 25°C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine
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HGTP2N120CN,
HGT1S2N120CN
HGTP2N120CN
HGT1S2N120CN
360ns
2N120CN
HGT1S2N120CNS9A
LD26
RHRD4120
TB334
igbt spice
igbt spice model
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CHIP SM 4108
Abstract: No abstract text available
Text: 1 9-0461; R e v 1, V M ^X IV k l 4 0 0 M H z , U ltra -L o w -D is to rtio n Op A m p s The M AX4108 delivers a 400M Hz unity-gain bandw idth w ith a 1200V/ js slew rate, while the MAX4109 provides a 225M H z gain b a n dw id th with a 1200V/ps slew rate.
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AX4108/M
AX4109
MAX4108
AX4108
MAX4109
200V/ps
-80dB
CHIP SM 4108
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marking codes fairchild
Abstract: 1200v 3A
Text: S3N 3A, 1200V Surface Mount Rectifier Features • Low Profile Package • Glass Passivated Junction. • High Breakdown Voltage Rating • UL Flammability Classification 94V-0 ELECTRICAL SYMBOL SMC/DO-214AB DEVICE MARKING CODE : S3N COLOR BAND DENOTES CATHODE
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SMC/DO-214AB
marking codes fairchild
1200v 3A
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5A IGBT
Abstract: 1MB03D-120 1MBC03-120 IC100 1MB03
Text: 1MBC03-120,1MB03D-120, Molded IGBT 1200V / 3A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications
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1MBC03-120
1MB03D-120,
5A IGBT
1MB03D-120
IC100
1MB03
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EN5321
Abstract: 2SC5265 2SC526 TA064 p60e
Text: Ordering number: EN5321 SAMYO No.5321 _ 2SC5265 i NPN Triple Diffused Planar Silicon Transistor Inverter-controlled Lighting Applications Features •High breakdown voltage Vcbo - 1200V . • High reliability (Adoption of HVP process).
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EN5321
2SC5265
EN5321
2SC5265
2SC526
TA064
p60e
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24BK lc Collector current. 150A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized
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QM150DY-24BK
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24K lc Collector current. 150A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized
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QM150DY-24K
E80276
E80271
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 5 Insulated Type
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QM30HQ-24
E80276
E80271
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PDF
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Diode B2x
Abstract: E80276 QM150DY-24K QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24K • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75
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QM150DY-24K
E80276
E80271
Diode B2x
E80276
QM150DY-24K
QM15
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PDF
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QM75DY-24
Abstract: E2-34 E80276
Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24 • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75
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QM75DY-24
E80276
E80271
QM75DY-24
E2-34
E80276
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PDF
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Diode B2x
Abstract: E80276 QM150DY-24BK QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24BK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750
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QM150DY-24BK
E80276
E80271
Diode B2x
E80276
QM150DY-24BK
QM15
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PDF
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E80276
Abstract: QM200HA-24
Text: MITSUBISHI TRANSISTOR MODULES QM200HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-24 • • • • • IC Collector current . 200A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75
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QM200HA-24
E80276
E80271
E80276
QM200HA-24
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qm5hg-24
Abstract: TRANSISTOR 545 QM5hg
Text: MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • • • • IC Collector current . 5A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 5
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QM5HG-24
400mA
qm5hg-24
TRANSISTOR 545
QM5hg
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G03H1202
Abstract: IGA03N120H2 IKP03N120H2 PG-TO220-3-31
Text: IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability
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IGA03N120H2
PG-TO220-3-31
PG-TO220-3-34
G03H1202
PG-TO-220-3-.
G03H1202
IGA03N120H2
IKP03N120H2
PG-TO220-3-31
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