A1723
Abstract: smd transistor 26 KPA1716 40A19
Text: IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS on 1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP.
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KPA1716
Powe20V,
A1723
smd transistor 26
KPA1716
40A19
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Untitled
Abstract: No abstract text available
Text: ECH8671 Ordering number : ENA1456A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8671 General-Purpose Switching Device Applications Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications
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ECH8671
ENA1456A
1200mm2Ã
A1456-7/7
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EMH1402
Abstract: No abstract text available
Text: EMH1402 Ordering number : EN8723 N-Channel Silicon MOSFET EMH1402 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage
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EMH1402
EN8723
1200mm2
EMH1402
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TND017MP
Abstract: TND017SW tA318
Text: Ordering number:ENN6481A ExPD Excellent Power Device TND017MP, TND017SW Lowside Power Switch Lamp, Solenoid, and Motor-Driving Applications Package Dimensions Unit:mm 2145 Unit:mm 2181 [TND017MP] [TND017SW] 8 6.0 5.0 5 3.0 0.5 0.6 6.0 4.4 0.3 4.7 4 1.5 14.0
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ENN6481A
TND017MP,
TND017SW
TND017MP]
TND017SW]
TND017SW
TND017MP
tA318
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a0923
Abstract: CPH6337
Text: CPH6337 Ordering number : ENA0923 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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CPH6337
ENA0923
1200mm20
A0923-4/4
a0923
CPH6337
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PDF
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Untitled
Abstract: No abstract text available
Text: MCH6438 Ordering number : ENA0889 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6438 General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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MCH6438
ENA0889
1200mm20
A0889-4/4
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Single ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications
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ENA1436A
ECH8674
1200mm2Ã
A1436-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in
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ENA2185B
ECH8690
A2185-8/8
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EMH1303
Abstract: No abstract text available
Text: EMH1303 Ordering number : ENA0661 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH1303 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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EMH1303
ENA0661
1200mm20
A0661-4/4
EMH1303
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PDF
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MCH6321
Abstract: No abstract text available
Text: MCH6321 Ordering number : ENA0963 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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MCH6321
ENA0963
1200mm20
A0963-4/4
MCH6321
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MCH6337
Abstract: No abstract text available
Text: MCH6337 Ordering number : ENA0959 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6337 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C
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MCH6337
ENA0959
PW10s,
1200mm20
A0959-4/4
MCH6337
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 switch.
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PA1708
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PA1723
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MarKING JS
Abstract: No abstract text available
Text: Ordering number : ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. High-speed switching. 4V drive. unit : mm 2151A [CPH6316] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6 2.8 0.05
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ENN7026
CPH6316
CPH6316]
MarKING JS
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A1667
Abstract: ENA1667A mosfet marking ke
Text: EMH1405 Ordering number : ENA1667A SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on 1=14mΩ(typ) 4V drive Halogen free compliance Protection diode in
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ENA1667A
EMH1405
PW10s,
1200mm2
A1667-7/7
A1667
ENA1667A
mosfet marking ke
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PDF
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a0923
Abstract: No abstract text available
Text: CPH6337 Ordering number : ENA0923A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA0923A
CPH6337
PW10s,
1200mm2
A0923-7/7
a0923
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PDF
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ic 74373
Abstract: 74371 IC 74374 74372
Text: TND027SW, 027TD Ordering number : EN7437B SANYO Semiconductors DATA SHEET TND027SW TND027TD ExPD Excellent Power Device Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications Features • • • • • N-channel MOSFET built in. Overheat protection. (Self recovery type)
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EN7437B
TND027SW,
027TD
TND027SW
TND027TD
1200mm20
TND027TD
ic 74373
74371
IC 74374
74372
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PDF
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A1776
Abstract: No abstract text available
Text: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1776
MCH6437
PW10s,
1200mm2
022A-009
A1776-4/4
A1776
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FSS212
Abstract: No abstract text available
Text: Ordering number:ENN5933 N-Channel Silicon MOSFET FSS212 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS212] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
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ENN5933
FSS212
FSS212]
FSS212
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PA1706
Abstract: UPA1706G
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1706 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management 8 5 applications of notebook computers.
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PA1706
PA1706
UPA1706G
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marking s104
Abstract: s104 diode S104 FSS104
Text: Ordering number:ENN5991A P-Channel Silicon MOSFET FSS104 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS104] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source
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ENN5991A
FSS104
FSS104]
marking s104
s104 diode
S104
FSS104
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET http://onsemi.com –20V, –6.5A, 26mΩ, Single EMH8 Features • • • ON-resistance RDS on 1 : 20mΩ(typ.) 1.8V drive Protection diode in • • Input Capacitance Ciss=1100pF(typ.) Halogen free compliance
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ENA1715A
EMH1307
1100pF
PW10s,
1200mm2
A1715-7/7
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PDF
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VEC2818
Abstract: No abstract text available
Text: VEC2818 注文コード No. N A 0 5 7 7 三洋半導体データシート N VEC2818 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。
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VEC2818
1200mm2
11707PE
TC-00000470
A0577-1/5
IT08571
IT08572
IT03090
VEC2818
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