|
XPN12006NC
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) |
|
|
|
TPN12008QM
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance |
|
|
|
RMLV1616AGSA-5S2#KA0
|
|
Renesas Electronics Corporation
|
16Mb Advanced LPSRAM (1M word × 16bit / 2M word x 8bit) |
|
|
|
RMLV1616AGSA-5S2#AA0
|
|
Renesas Electronics Corporation
|
16Mb Advanced LPSRAM (1M word × 16bit / 2M word x 8bit) |
|
|
|
RMLV3216AGSD-5S2#HA0
|
|
Renesas Electronics Corporation
|
32Mb Advanced LPSRAM (2M word × 16bit / 4M word x 8bit) |
|
|
