skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 12 IFAVM vrRRM V 1200 Vrrm 1200 DSEI 12-12A Test C onditions ^FRMS ^FRM "^"vj — "l"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited byTVJM ^FSM TVJ = 45°C; Maximum Ratings
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Text: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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Text: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 12 IFAVM = 12 A VRRM = 1000 V = 50 ns trr C A Type TO-220 AC V 1000 DSEI 12-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
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Text: DSEI 12-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns 1 3 Type 2/4 DSEI 12-06AS Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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Text: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V = 50 ns trr TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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Text: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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IXYS DSEI 12-06A
Abstract: ixys dsei ixys dsei 12
Text: DSEI 12-06A VRRM = 600 V IFAVM = 14 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 A Type C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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Text: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 12 IFAVM = 14 A VRRM = 600 V = 35 ns trr C A Type TO-220 AC V 600 DSEI 12-06A C C A Symbol Test Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
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MD 94V0 RU
Abstract: 12-12A 2u92
Text: Fast Recovery Epitaxial Diode FRED VRSM VRRM V DSEI 12 IFAVM = 11 A VRRM = 1200 V trr = 50 ns Type C A TO-220 AC V 1200 1200 DSEI 12-12A C C Symbol IFRMS IFAVM IFRM IFSM Test Conditions ¬ Maximum Ratings TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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Abstract: IXYS rectifiers dsei12
Text: Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM DSEI 12 IFAVM = 11 A VRRM = 1200 V = 50 ns trr C A Type TO-220 AC V 1200 DSEI 12-12A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
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Abstract: DSEI12
Text: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 12 IFAVM = 14 A VRRM = 600 V = 35 ns trr C A Type TO-220 AC V 600 DSEI 12-06A C C A Symbol Test Conditions I FRMS I FAVM ¬ I FRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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Text: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM
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Text: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 11 A VRRM = 1200 V = 50 ns trr TO-220 AC C V A 1200 1200 DSEI 12-12A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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Abstract: IR 1206A IXYS DSEI 12-06A IXYS DSEI 2
Text: DSEI 12-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM
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Text: AO4924 Asymmetric Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4924 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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Text: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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Text: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter
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Text: AO4924 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4924 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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Text: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter
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