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    12 BSZ Search Results

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    12 BSZ Price and Stock

    Analog Devices Inc ADUC812BSZ-REEL

    IC MCU 8BIT 8KB FLASH 52MQFP
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    DigiKey ADUC812BSZ-REEL Digi-Reel 1,399 1
    • 1 $29.72
    • 10 $21.303
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    ADUC812BSZ-REEL Cut Tape 1,399 1
    • 1 $29.72
    • 10 $21.303
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    ADUC812BSZ-REEL Reel 800
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    Mouser Electronics ADUC812BSZ-REEL 759
    • 1 $28.05
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    Newark ADUC812BSZ-REEL Cut Tape 476 1
    • 1 $38.22
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    Analog Devices Inc ADUC812BSZ-REEL 280 1
    • 1 $29.72
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    Vyrian ADUC812BSZ-REEL 495
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    Win Source Electronics ADUC812BSZ-REEL 2,600
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    Analog Devices Inc ADUC812BSZ

    IC MCU 8BIT 8KB FLASH 52MQFP
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    DigiKey ADUC812BSZ Tray 1,177 1
    • 1 $29.72
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    Mouser Electronics ADUC812BSZ 75
    • 1 $28.27
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    • 1000 $17.73
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    Newark ADUC812BSZ Bulk 5 1
    • 1 $37.68
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    Analog Devices Inc ADUC812BSZ 236
    • 1 $22.06
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    Bristol Electronics ADUC812BSZ 208
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    TME ADUC812BSZ 1
    • 1 $28.3
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    ComSIT USA ADUC812BSZ 187
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    Richardson RFPD ADUC812BSZ 10 1
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    Flip Electronics ADUC812BSZ 50
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    Vyrian ADUC812BSZ 56
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    Win Source Electronics ADUC812BSZ 2,500
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    • 10 $14.086
    • 100 $11.658
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    Cirrus Logic CS5512-BSZ

    IC ADC 20BIT SIGMA-DELTA 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CS5512-BSZ Tube 1
    • 1 $10.83
    • 10 $7.392
    • 100 $5.4812
    • 1000 $5.1
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    Avnet Americas CS5512-BSZ Tube 17 Weeks 400
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    Mouser Electronics CS5512-BSZ
    • 1 $10.83
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    Avnet Silica CS5512-BSZ 19 Weeks 400
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    Cirrus Logic CS5512-BSZR

    IC ADC 20BIT SIGMA-DELTA 8SOIC
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    DigiKey CS5512-BSZR Reel 2,000
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    Avnet Americas CS5512-BSZR Reel 17 Weeks 2,000
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    Avnet Silica CS5512-BSZR 19 Weeks 2,000
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    Infineon Technologies AG BSZ123N08NS3GATMA1

    MOSFETs N-Ch 80V 40A TSDSON-8 OptiMOS 3
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    Mouser Electronics BSZ123N08NS3GATMA1 23,572
    • 1 $1.51
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    • 100 $0.801
    • 1000 $0.55
    • 10000 $0.511
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    12 BSZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FAZ-C4 equivalent

    Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
    Text: 12/0 Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2004/2005 For Immediate Delivery call KMParts.com at 866 595-9616 Overview 12/1 Miniature circuit-breakers MCB enclosures, fuse enclosures


    Original
    HPL0211-2004/2005 -GSTA-1/50 -GSTA-2/50 GST00 -40-60-AOU FAZ-C4 equivalent SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT PDF

    3029 ifc arm

    Abstract: Trident frc iso7816 sim AGERE DSP 0xE0000034 20-pin JTAG interface connector motorola isri wic 2T mc4053 Trident II
    Text: Advance Data Sheet January 14, 2002 Trident Production Devices Trident 0.25 µm /Trident II (0.20 µm) 1 Features • Package options: — Trident (0.25 µm): 196-pin FSBGA. 12 mm x 12 mm. 0.8 mm ball pitch. — Trident II (0.20 µm): Package A: 196-pin FSBGA.


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    DSP16000 DS02-020WMA DS01-275WMA) 3029 ifc arm Trident frc iso7816 sim AGERE DSP 0xE0000034 20-pin JTAG interface connector motorola isri wic 2T mc4053 Trident II PDF

    Untitled

    Abstract: No abstract text available
    Text: BSZ0909NS OptiMOS Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL VDS • Low FOMSW for High Frequency SMPS RDS(on),max • 100% avalanche tested 34 V VGS=10 V 12 mW VGS=4.5 V 15 ID • Improved switching behaviour


    Original
    BSZ0909NS IEC61249-2-21 0909NS PDF

    PG-TSDSON-8

    Abstract: 120P3N
    Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original
    BSZ120P03NS3E IEC61249-2-21 120P3NE 726-BSZ120P03NS3EG PG-TSDSON-8 120P3N PDF

    120P3N

    Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode
    Text: BSZ120P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original
    BSZ120P03NS3 IEC61249-2-21 120P3N 120P3N IEC61249-2-21 JESD22 JESD22-A114 BSZ120P03NS3 G d20 diode PDF

    transistor C 2240

    Abstract: IEC61249-2-21 JESD22 JESD22-A114
    Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original
    BSZ120P03NS3E IEC61249-2-21 120P3NE transistor C 2240 IEC61249-2-21 JESD22 JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSZ120P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS on ,max 12 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications


    Original
    BSZ120P03NS3E IEC61249-2-21 120P3NE 70angerous PDF

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original
    B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter PDF

    murata npo

    Abstract: Murata
    Text: FPGA Power Module 12V input, 8 Outputs at 2A to 8A Reference Design PRD1366 FEATURES Low cost Meet’s Specification for AVNET Mini Module Plus for Xilinx 7 series Kintex FPGA Hard wired turn on sequence High Efficiency >93% at full load 12 V input +/-10%


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    PRD1366 ADP1850 murata npo Murata PDF

    LT4320

    Abstract: No abstract text available
    Text: LT4320/LT4320-1 Ideal Diode Bridge Controller Description Features Maximizes Power Efficiency n Eliminates Thermal Design Problems n DC to 600Hz n 9V to 72V Operating Voltage Range n I = 1.5mA Typical Q n Maximizes Available Voltage n Available in 8-Lead (3mm x 3mm) DFN, 12-Lead


    Original
    LT4320/LT4320-1 600Hz 12-Lead 4320/LT4320-1 600Hz LTC4358 LTC4359 LTC4370 MSOP-16 DFN-16 LT4320 PDF

    gigabyte g41

    Abstract: siemens PMB 6610 transistor full 2000 to 2012 roland ic 1N191 transistor said horizontal tt 2222 schematic diagram of aoc monitor mod 4 c program with flowchart of countdown timer in 8051 BD2XXXX
    Text: MftH'll \t/\H vSi V X T JJ ✓ Ar % 1 Overview 2 External Signals 3 Memory Map m n Reset 5 Clocks and Power Control 6 Core PowerPC Architecture Compliance 8 Instruction Execution Timing 9 Instruction Cache 10 Data Cache 11 Memory Management Unit 12 System Interface Unit


    OCR Scan
    MPC821 1ATX35431-0 MPCB31UM/A0 gigabyte g41 siemens PMB 6610 transistor full 2000 to 2012 roland ic 1N191 transistor said horizontal tt 2222 schematic diagram of aoc monitor mod 4 c program with flowchart of countdown timer in 8051 BD2XXXX PDF

    Untitled

    Abstract: No abstract text available
    Text: LT4320/LT4320-1 Ideal Diode Bridge Controller Description Features Maximizes Power Efficiency n Eliminates Thermal Design Problems n DC to 600Hz n 9V to 72V Operating Voltage Range n I = 1.5mA Typical Q n Maximizes Available Voltage n Available in 8-Lead (3mm x 3mm) DFN, 12-Lead


    Original
    LT4320/LT4320-1 600Hz 12-Lead 4320/LT4320-1 600Hz LTC4358 LTC4359 LTC4370 MSOP-16 DFN-16 PDF

    semikron skkt 130

    Abstract: 12 bsz
    Text: SKKT 500, SKKH 500 VRS VRRM dv/ VDRM dt cr ITRMS (maximum values for continuous operation) 920 A V V V/µs ITAV (sin. 180; Tcase = 80 °C) 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E


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    SKKT500 xls-10 semikron skkt 130 12 bsz PDF

    semikron skkt 500/14

    Abstract: IGD 001 semikron skkt skkt 40 12 semikron skkh skkh 500/16 skkt skkh skkt 1000 skkt 40
    Text: SKKT 500, SKKH 500 VRS VRRM dv/ VDRM dt cr ITRMS (maximum values for continuous operation) 920 A V V V/µs ITAV (sin. 180; Tcase = 80 °C) 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E


    Original
    SKKT500 xls-10 semikron skkt 500/14 IGD 001 semikron skkt skkt 40 12 semikron skkh skkh 500/16 skkt skkh skkt 1000 skkt 40 PDF

    BSZ340N08NS3 G

    Abstract: IEC61249-2-21 JESD22 Marking d12 340n08
    Text: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original
    BSZ340N08NS3 IEC61249-2-21 340N08N BSZ340N08NS3 G IEC61249-2-21 JESD22 Marking d12 340n08 PDF

    JESD22

    Abstract: No abstract text available
    Text: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original
    BSZ340N08NS3 340N08N JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original
    BSZ340N08NS3 340N08N PDF

    Untitled

    Abstract: No abstract text available
    Text: BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original
    BSZ340N08NS3 340N08N PDF

    340N08N

    Abstract: Marking d12 JESD22 BSZ340N08NS3
    Text: BSZ340N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 34 mΩ ID 23 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original
    BSZ340N08NS3 340N08N 340N08N Marking d12 JESD22 PDF

    060NE2L

    Abstract: No abstract text available
    Text: BSZ060NE2LS For OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter Server,VGA VDS • Very Low FOMQOSS for High Frequency SMPS RDS(on),max • Low FOMSW for High Frequency SMPS • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSZ060NE2LS IEC61249-2-21 060NE2L PDF

    BSZ520N15NS3

    Abstract: marking 6B s4si 6B104 I6025 marking a6b
    Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6=  ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q  H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) '  Q& @G @? B6C:CD2 ? 46 R 9I"\[#


    Original
    BSZ520N15NS3 marking 6B s4si 6B104 I6025 marking a6b PDF

    440N10N

    Abstract: f66a BSZ440N10NS3 IEC61249-2-21 JESD22 BSZ440N10NS3 G
    Text: BSZ440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 44 mΩ • Optimized for dc-dc conversion ID 18 A • N-channel, normal level PG-TSDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSZ440N10NS3 IEC61249-2-21 440N10N 440N10N f66a IEC61249-2-21 JESD22 BSZ440N10NS3 G PDF

    440N10N

    Abstract: BSZ440N10NS3 BSZ440N10NS3 G JESD22 BSZ440N10NS3G
    Text: BSZ440N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 44 mΩ ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSZ440N10NS3 440N10N 440N10N BSZ440N10NS3 G JESD22 BSZ440N10NS3G PDF

    Untitled

    Abstract: No abstract text available
    Text: Je]R BSZ520N15NS3 G TM  3 Power-Transistor Product Summary Features Q฀ AD:>:J65฀7@B฀54 54฀4@?F6BC:@? Q฀ 492?6=฀?@B>2=฀=6F6= V 9I )-( K R 9I"\[#$ZNd -* Z I9 *) 6 Q฀H46=6?D฀82D6฀492B86฀H฀R 9I"\[#฀AB@5E4D฀ )' Q฀&@G฀@? B6C:CD2?46฀R 9I"\[#


    Original
    BSZ520N15NS3 492B86à D2B86Dà D96BG PDF