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    12 BIT SYNCHRONOUS COUNTER Search Results

    12 BIT SYNCHRONOUS COUNTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54S163J/B Rochester Electronics LLC 54S163 - Synchronous 4-Bit Counters Visit Rochester Electronics LLC Buy
    54F191/QFA Rochester Electronics LLC BINARY COUNTER; 4-BIT SYNCHRONOUS UP/DOWN; PRESETTABLE Visit Rochester Electronics LLC Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet

    12 BIT SYNCHRONOUS COUNTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sv005

    Abstract: 74LV161 74LV161PW
    Text: INTEGRATED CIRCUITS 74LV161 Presettable synchronous 4-bit binary counter; asynchronous reset Product specification Supersedes data of 1997 Feb 12 IC24 Data Handbook Philips Semiconductors 1997 May 15 Philips Semiconductors Product specification Presettable synchronous 4-bit binary counter;


    Original     		PDF 74LV161 74LV161 74HC/HCT161. sv005 74LV161PW

    CXK77V3211Q

    Abstract: No abstract text available
    Text: CXK77V3211Q -12/14 32768-word by 32-bit High Speed Synchronous Static RAM For the availability of this product, please contact the sales office. Description The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through


    Original     		PDF CXK77V3211Q 32768-word 32-bit CXK77V3211Q 100PIN QFP100-P-1420-B QFP-100P-L02

    M12179

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 12:59 µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology


    Original     		PDF PD431636L 32K-WORD 36-BIT PD431636L 768-word M12179

    Untitled

    Abstract: No abstract text available
    Text: 74HC193-Q100; 74HCT193-Q100 Presettable synchronous 4-bit binary up/down counter Rev. 1 — 12 July 2013 Product data sheet 1. General description The 74HC193-Q100; 74HCT193-Q100 is a 4-bit synchronous binary up/down counter. Separate up/down clocks, CPU and CPD respectively, simplify operation. The outputs


    Original     		PDF 74HC193-Q100; 74HCT193-Q100 74HCT193-Q100 HCT139

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11052-1E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B-10/-12/-15/-10L/-12L/-15L CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original     		PDF DS05-11052-1E MB811L643242B-10/-12/-15/-10L/-12L/-15L 288-Word MB811L643242B 32-bit D-63303 F9904

    Untitled

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11052-1E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B-10/-12/-15/-10L/-12L/-15L CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION


    Original     		PDF DS05-11052-1E MB811L643242B-10/-12/-15/-10L/-12L/-15L 288-Word MB811L643242B 32-bit F9904

    Untitled

    Abstract: No abstract text available
    Text: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release


    Original     		PDF A43L0616B

    A43L0616BV-7F

    Abstract: No abstract text available
    Text: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release


    Original     		PDF A43L0616B A43L0616BV-7F

    Untitled

    Abstract: No abstract text available
    Text: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release


    Original     		PDF A43L0616B

    A43L0616BV-7F

    Abstract: A43L0616B A43L0616BV
    Text: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release


    Original     		PDF A43L0616B A43L0616BV-7F A43L0616B A43L0616BV

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77V3211Q 12/14 32768-word by 32-bit High Speed Synchronous Static RAM Description The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through register controlled


    OCR Scan     		PDF CXK77V3211Q 32768-word 32-bit CXK77V3211Q 100PIN QFP100-P-1420-B QFP-100P-L02

    TC59S1616

    Abstract: TC59S1616AFT TC59S1608AF
    Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59S1616AFT-8 TC59S1608AFT-8 TC59S1604AFT-8 288-WORD 16-BIT 576-WORDx2 TC59S1616AFT, TC59S1608AFT TC59S1604AFT TC59S1616 TC59S1616AFT TC59S1608AF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V1325FF-7 TC55V1325FF 576-bit LQFP100-P-1420-0

    TC55V1325FF

    Abstract: TC55V1325FF-7 IN1016
    Text: TOSHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V1325FF-7 768-WORD 32-BIT TC55V1325FF 576-bit LQFP100-P-1420-0 IN1016

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V1325FF-7 TC55V1325FF 576-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: . TOSHIBA 11\ I I TC55V1325FF-8, TC55V1325FF -10, TC55V1325FF -12 TECHNICAL DATA SILICON G A TE CMOS TENTATIVE 32,768 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V1325FF is a 1,048,576 bit synchronous pipelined burst SRAM that is organized as 32,768


    OCR Scan     		PDF TC55V1325FF-8, TC55V1325FF 32KX32 TC55V1325FFâ 002b117 TC55V1325FF-10.

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77V3211Q-11/12/14 PRELIMINARY Description The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through register controlled by a positive-edge-triggered single clock


    OCR Scan     		PDF CXK77V3211Q-11/12/14 CXK77V3211Q

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77V3211Q-11/12/14 PRELIMINARY D escription The CXK77V3211Q is a 32K x 32 high performance synchronous SRAM with a 2-bit burst counter and output register. All synchronous inputs pass through register controlled by a positive-edge-triggered single clock


    OCR Scan     		PDF CXK77V3211Q-11/12/14 CXK77V3211Q D007SÃ fl3fl23fl3

    TC59S16

    Abstract: TC59S1616A
    Text: TO S H IB A TENTATIVE TC59S16 1 6 A F T -8.-10 .-12 A .-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD x 2 BANK x 16-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S1616AFT is CMOS synchronous dynamic random access memory devices, organized as 524,


    OCR Scan     		PDF TC59S16 288-WORD 16-BIT TC59S1616AFT TSOPII50 35MAX TC59S1616A

    MARKING CEK

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET ADVANCE INFO. MEMORY CMOS 4 X 1M X 16 BIT DOUBLE DATA RATE SDRAM MB81P641647A-10/-12 CMOS 4-BANK 1,048,576-WORD x 16 BIT Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION The Fujitsu MB81P641647A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF MB81P641647A-10/-12 576-WORD MB81P641647A 16-bit F9810 MARKING CEK

    MARKING CEK

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET ADVANCE INFO. MEMORY CMOS 4 x 4M x 4 BIT DOUBLE DATA RATE SDRAM MB81P64447A-10/-12 CMOS 4-BANK 4,194,304-WORD x 4 BIT Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION The Fujitsu MB81P64447A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF MB81P64447A-10/-12 304-WORD MB81P64447A B81P64447Afeaturesafully MB81P6ODE 66-LEAD FPT-66P-M01) 24-IW MARKING CEK

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET ADVANCE INFO. MEMORY CMOS 4 x 2M x 8 BIT DOUBLE DATA RATE SDRAM MB81P64847A-10/-12 CMOS 4-BANK 2,097,152-WORD x 8 BIT Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION The Fujitsu MB81P64847A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF MB81P64847A-10/-12 152-WORD MB81P64847A MB81P64847Afeaturesafully 66-LEAD FPT-66P-Mxx)

    l64324

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan     		PDF MB811L643242B -10/-12/-15/-10L/-12L/-15L 288-Word B811L643242B 32-bit l64324

    Untitled

    Abstract: No abstract text available
    Text: TC59GJ632AFB-80,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT StU CbN ^pN bLIJH IC 262,144-WORDX 2-BANKX32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1632AFB is a CM OS synchronous graphics random access memory or& ajiize^a* 262.144


    OCR Scan     		PDF TC59GJ632AFB-80 144-WORDX 2-BANKX32-BIT TC59G1632AFB 32-bit. Fiaure29 0Q31fc TC59G1632AFB-80 TQFP100-P-1420-0 OJ75TYP