Untitled
Abstract: No abstract text available
Text: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm
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MAMF-000003-DIE000
MAMF-000003-DIE000
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x-band mmic
Abstract: x-band power TR 0/MAPS-008342-DIE000
Text: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm
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MAMF-000003-DIE000
MAMF-000003-DIE000
x-band mmic
x-band power TR
0/MAPS-008342-DIE000
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MAMFGM0001
Abstract: X-Band T/R
Text: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input
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MAMFGM0001-DIE
MAMFGM0001-DIE000
MAMFGM0001
X-Band T/R
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x-band mmic phase
Abstract: x-band power TR
Text: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm
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MAMF-000004-DIE000
MAMF-000004-DIE000
x-band mmic phase
x-band power TR
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x-band power TR
Abstract: No abstract text available
Text: MAMF-000002-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 21 dB; Rx Gain = 15 dB Serial Control Data Input
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MAMF-000002-DIE000
MAMF-000002-DIE000
x-band power TR
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x-band mmic phase
Abstract: MAMF-000003-DIE000 x-band mmic
Text: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm
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MAMF-000003-DIE000
MAMF-000003-DIE000
x-band mmic phase
x-band mmic
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SAFEA1G96FR0F00
Abstract: murata SAW
Text: SAW FILTER FOR Band2 Rx Murata part number : SAFEA1G96FR0F00 Package Dimensions Specification Specification Item Nominal Center Frequency(fc) 1.35±0.05 (1) Dot Marking(0.3) (4) 1.05±0.05 (5) DM (3) (0.17) (3) 2-0.25±0.05 (2) (0.075) 5-0.325±0.050
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SAFEA1G96FR0F00
1960MHz
1990MHz)
52MHz)
SAFEA1G96FR0F00
murata SAW
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schematic diagram 48V telecom ups
Abstract: 1gm smd 850-984 smd microswitch Loctite 243 Circuit diagram of 12v 10W LED drive rectifier ckt RESISTOR SMD 3R3 ORing fet 48v 5a 12volt dc to 24 volt dc converter schematic
Text: Computing & Communications SBU - AC-DC Applications Group 1 Kim Seng Promenade, #10-01, Great World City East Tower, Singapore IR5001 Universal ORing Controller IRAC5001-HS48V Demo Board User’s Guide Rev. 1.1 25 July 2005 Rev1.1 07/25/2005 International Rectifier
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IR5001
IRAC5001-HS48V
25deg
schematic diagram 48V telecom ups
1gm smd
850-984
smd microswitch
Loctite 243
Circuit diagram of 12v 10W LED drive
rectifier ckt
RESISTOR SMD 3R3
ORing fet 48v 5a
12volt dc to 24 volt dc converter schematic
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Untitled
Abstract: No abstract text available
Text: MAMF-000002-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 21 dB; Rx Gain = 15 dB Serial Control Data Input
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MAMF-000002-DIE000
MAMF-000002-DIE000
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AH118
Abstract: No abstract text available
Text: Application Note AH118 2.5-2.7 GHz WiMAX Reference Design Summary 16 10 14 12 -10 10 -20 8 -30 Measured RF Performance Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 GHz dB dB dB dBm 2.5 13.9 5.8 31 +24.2 2.6 14.9 24 15 +24.6 2.7
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AH118
AH118"
11deg
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: Using the Catalog Specifications to Determine MMIC Reliability AN-60-030 Specification pages for MMIC (Microwave Monolithic Integrated Circuit) amplifiers in the Mini-Circuits catalog contain graphs of typical MTTF (Mean-Time-To-Failure) as a function of Junction Temperature. To use one of these graphs it is necessary to know the
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AN-60-030)
AN-60-030
M150261
AN60030
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SAW DPX
Abstract: SAYFP1G88CA0B00 SAW DPX band2 SAYF murata SAW
Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW DPX FOR UMTS BAND2 Murata part number :SAYFP1G88CA0B00 Package Dimensions
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SAYFP1G88CA0B00
1880MHz
52MHz)
SAW DPX
SAYFP1G88CA0B00
SAW DPX band2
SAYF
murata SAW
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SMD c015
Abstract: MURATA SAW 5970 SAWES 21DB5
Text: SAW FILTER FOR GSM1800/GSM1900 Rx Murata part number : SAWES1G84CQ0F00 (fc=1842.5MHz) Feature 1. Dual type 2. Small SMD package (2.5x2.0mm package) 3. Low Insertion Loss (2.5 dB max.) 4. Balance type (50Ω//150Ω) Test Circuit 50Ω 4 3 2 1 S.S.G. 5 6
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GSM1800/GSM1900
SAWES1G84CQ0F00
1880MHz)
SMD c015
MURATA SAW
5970
SAWES
21DB5
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MURATA SAW 1960MHZ
Abstract: SAWES881MCU2F00 SAWES murata SAW
Text: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWES881MCU2F00 (fc=881.5MHz) Feature 1. Small SMD package (2.5x2.0mm package) 2. Dual type 3. Balance type (50Ω//150Ω) 4. Low Insertion Loss (2.0 dB max.) Test Circuit 50Ω 5 4 3 2 1 S.S.G. 6 7
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GSM850/GSM1900
SAWES881MCU2F00
894MHz)
MURATA SAW 1960MHZ
SAWES881MCU2F00
SAWES
murata SAW
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MAMFGM0001-DIE
Abstract: x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R MAMFGM0001-DIE000
Text: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev C Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input
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MAMFGM0001-DIE
MAMFGM0001-DIE000
MAMFGM0001-DIE
x-band mmic
x-band power TR
MMIC X-band amplifier
X-Band T/R
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Untitled
Abstract: No abstract text available
Text: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm
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MAMF-000004-DIE000
MAMF-000004-DIE000
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MAMFGM0001-DIE
Abstract: x-band mmic x-band power TR
Text: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input
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MAMFGM0001-DIE
MAMFGM0001-DIE000
MAMFGM0001-DIE
x-band mmic
x-band power TR
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SAYFP1G88CA0B00
Abstract: sayfp1g88 SAYF murata SAW
Text: SAW DPX FOR UMTS BAND2 Murata part number :SAYFP1G88CA0B00 Package Dimensions 6 Item (9) (5) (4) S 3 0 Dot Marking(0.3) (2) Absolute Attenuation 1) 0.1 to (3) 0.55max. (1) (0.075) (1) (2) (3) (0.075) (C0.15) (0.155) 25±2°C typ. 1880MHz 3.4 dB max. 3.4 dB max.
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SAYFP1G88CA0B00
1880MHz
52MHz)
SAYFP1G88CA0B00
sayfp1g88
SAYF
murata SAW
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Untitled
Abstract: No abstract text available
Text: Available as: RF AMPLIFIER MODEL TM9101 TM 9101,4 Pin TO-8 T4 TN9101, 4 Pin Surface Mount (SM3) FP9101, 4 Pin Flatpack (FP4) BX9101, Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C • Low Noise Figure: 2.4 dB Typical ■ Medium Gain: 15 dB Typical
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TM9101
TN9101,
FP9101,
BX9101,
11---------Deg
S21---------Deg
S12---------Deg
S22-------Deg
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Untitled
Abstract: No abstract text available
Text: RF AMPLIFIER MODEL TM9333 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +50 Typ. Second Order Two Tone Intercept Point. t-44(Typ.) Third Order Two Tone Intercept Point. +30 (Typ.)
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TM9333
BX9333,
PN9333,
S21---------Deg
11--------Deg
S12---------Deg
S22------Deg
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HY53C464LS
Abstract: HY53C464
Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
4b750afl
1AA02-20-APR93
HY53C464S
HY53C464LS
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HY628400LLG-I
Abstract: DV06 138-884
Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512Kx
1DE02-11-MAY95
HY628400LP-I
HY628400LLP-I
HY628400LG-I
HY628400LLG-I
DV06
138-884
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HY628100
Abstract: No abstract text available
Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628100
128Kx
85/100/120ns
1DD01-11-MAY94
ML750Ã
GD0373b
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HY628100ALP
Abstract: No abstract text available
Text: HYUNDAI H Y 6 2 8 1 O O A S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628100A
128Kx
-270t
1DD02-11-MAY9S
HY6281OOAP
HY628100ALP
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