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    ams OSRAM Group Q62702P1760

    Laser Diodes 25 W, 905 nm
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    ROHM Semiconductor RLD78MZA6-00A

    Laser Diodes 780NM MULTI MODE LASER INVI
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    TTI RLD78MZA6-00A Tray 500
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    11DEG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm


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    PDF MAMF-000003-DIE000 MAMF-000003-DIE000

    x-band mmic

    Abstract: x-band power TR 0/MAPS-008342-DIE000
    Text: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm


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    PDF MAMF-000003-DIE000 MAMF-000003-DIE000 x-band mmic x-band power TR 0/MAPS-008342-DIE000

    MAMFGM0001

    Abstract: X-Band T/R
    Text: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input


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    PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001 X-Band T/R

    x-band mmic phase

    Abstract: x-band power TR
    Text: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm


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    PDF MAMF-000004-DIE000 MAMF-000004-DIE000 x-band mmic phase x-band power TR

    x-band power TR

    Abstract: No abstract text available
    Text: MAMF-000002-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 21 dB; Rx Gain = 15 dB Serial Control Data Input


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    PDF MAMF-000002-DIE000 MAMF-000002-DIE000 x-band power TR

    x-band mmic phase

    Abstract: MAMF-000003-DIE000 x-band mmic
    Text: MAMF-000003-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 25 dB; Rx Gain = 19 dB Rx Output TOI = 30 dBm


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    PDF MAMF-000003-DIE000 MAMF-000003-DIE000 x-band mmic phase x-band mmic

    SAFEA1G96FR0F00

    Abstract: murata SAW
    Text: SAW FILTER FOR Band2 Rx Murata part number : SAFEA1G96FR0F00 Package Dimensions Specification Specification Item Nominal Center Frequency(fc) 1.35±0.05 (1) Dot Marking(0.3) (4) 1.05±0.05 (5) DM (3) (0.17) (3) 2-0.25±0.05 (2) (0.075) 5-0.325±0.050


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    PDF SAFEA1G96FR0F00 1960MHz 1990MHz) 52MHz) SAFEA1G96FR0F00 murata SAW

    schematic diagram 48V telecom ups

    Abstract: 1gm smd 850-984 smd microswitch Loctite 243 Circuit diagram of 12v 10W LED drive rectifier ckt RESISTOR SMD 3R3 ORing fet 48v 5a 12volt dc to 24 volt dc converter schematic
    Text: Computing & Communications SBU - AC-DC Applications Group 1 Kim Seng Promenade, #10-01, Great World City East Tower, Singapore IR5001 Universal ORing Controller IRAC5001-HS48V Demo Board User’s Guide Rev. 1.1 25 July 2005 Rev1.1 07/25/2005 International Rectifier


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    PDF IR5001 IRAC5001-HS48V 25deg schematic diagram 48V telecom ups 1gm smd 850-984 smd microswitch Loctite 243 Circuit diagram of 12v 10W LED drive rectifier ckt RESISTOR SMD 3R3 ORing fet 48v 5a 12volt dc to 24 volt dc converter schematic

    Untitled

    Abstract: No abstract text available
    Text: MAMF-000002-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 21 dB; Rx Gain = 15 dB Serial Control Data Input


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    PDF MAMF-000002-DIE000 MAMF-000002-DIE000

    AH118

    Abstract: No abstract text available
    Text: Application Note AH118 2.5-2.7 GHz WiMAX Reference Design Summary 16 10 14 12 -10 10 -20 8 -30 Measured RF Performance Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 GHz dB dB dB dBm 2.5 13.9 5.8 31 +24.2 2.6 14.9 24 15 +24.6 2.7


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    PDF AH118 AH118" 11deg 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: Using the Catalog Specifications to Determine MMIC Reliability AN-60-030 Specification pages for MMIC (Microwave Monolithic Integrated Circuit) amplifiers in the Mini-Circuits catalog contain graphs of typical MTTF (Mean-Time-To-Failure) as a function of Junction Temperature. To use one of these graphs it is necessary to know the


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    PDF AN-60-030) AN-60-030 M150261 AN60030

    SAW DPX

    Abstract: SAYFP1G88CA0B00 SAW DPX band2 SAYF murata SAW
    Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW DPX FOR UMTS BAND2 Murata part number :SAYFP1G88CA0B00 Package Dimensions


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    PDF SAYFP1G88CA0B00 1880MHz 52MHz) SAW DPX SAYFP1G88CA0B00 SAW DPX band2 SAYF murata SAW

    SMD c015

    Abstract: MURATA SAW 5970 SAWES 21DB5
    Text: SAW FILTER FOR GSM1800/GSM1900 Rx Murata part number : SAWES1G84CQ0F00 (fc=1842.5MHz) Feature 1. Dual type 2. Small SMD package (2.5x2.0mm package) 3. Low Insertion Loss (2.5 dB max.) 4. Balance type (50Ω//150Ω) Test Circuit 50Ω 4 3 2 1 S.S.G. 5 6


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    PDF GSM1800/GSM1900 SAWES1G84CQ0F00 1880MHz) SMD c015 MURATA SAW 5970 SAWES 21DB5

    MURATA SAW 1960MHZ

    Abstract: SAWES881MCU2F00 SAWES murata SAW
    Text: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWES881MCU2F00 (fc=881.5MHz) Feature 1. Small SMD package (2.5x2.0mm package) 2. Dual type 3. Balance type (50Ω//150Ω) 4. Low Insertion Loss (2.0 dB max.) Test Circuit 50Ω 5 4 3 2 1 S.S.G. 6 7


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    PDF GSM850/GSM1900 SAWES881MCU2F00 894MHz) MURATA SAW 1960MHZ SAWES881MCU2F00 SAWES murata SAW

    MAMFGM0001-DIE

    Abstract: x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R MAMFGM0001-DIE000
    Text: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev C Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input


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    PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001-DIE x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R

    Untitled

    Abstract: No abstract text available
    Text: MAMF-000004-DIE000 Control Chip, X-Band T/R 7.0—12.0 GHz Rev A Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 19 dB; Rx Gain = 13 dB Rx Output TOI = 31 dBm


    Original
    PDF MAMF-000004-DIE000 MAMF-000004-DIE000

    MAMFGM0001-DIE

    Abstract: x-band mmic x-band power TR
    Text: MAMFGM0001-DIE Control Chip, X-Band T/R 7.0—12.0 GHz Rev B Preliminary Datasheet Features ♦ Highly Integrated MMIC ◊ ◊ ◊ ◊ Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and 6-Bit Attenuator Tx Gain = 28 dB; Rx Gain = 21 dB Serial Control Data Input


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    PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001-DIE x-band mmic x-band power TR

    SAYFP1G88CA0B00

    Abstract: sayfp1g88 SAYF murata SAW
    Text: SAW DPX FOR UMTS BAND2 Murata part number :SAYFP1G88CA0B00 Package Dimensions 6 Item (9) (5) (4) S 3 0 Dot Marking(0.3) (2) Absolute Attenuation 1) 0.1 to (3) 0.55max. (1) (0.075) (1) (2) (3) (0.075) (C0.15) (0.155) 25±2°C typ. 1880MHz 3.4 dB max. 3.4 dB max.


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    PDF SAYFP1G88CA0B00 1880MHz 52MHz) SAYFP1G88CA0B00 sayfp1g88 SAYF murata SAW

    Untitled

    Abstract: No abstract text available
    Text: Available as: RF AMPLIFIER MODEL TM9101 TM 9101,4 Pin TO-8 T4 TN9101, 4 Pin Surface Mount (SM3) FP9101, 4 Pin Flatpack (FP4) BX9101, Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C • Low Noise Figure: 2.4 dB Typical ■ Medium Gain: 15 dB Typical


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    PDF TM9101 TN9101, FP9101, BX9101, 11---------Deg S21---------Deg S12---------Deg S22-------Deg

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TM9333 Available as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +50 Typ. Second Order Two Tone Intercept Point. t-44(Typ.) Third Order Two Tone Intercept Point. +30 (Typ.)


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    PDF TM9333 BX9333, PN9333, S21---------Deg 11--------Deg S12---------Deg S22------Deg

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    HY628400LLG-I

    Abstract: DV06 138-884
    Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY628400-I 512Kx 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I HY628400LLG-I DV06 138-884

    HY628100

    Abstract: No abstract text available
    Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY628100 128Kx 85/100/120ns 1DD01-11-MAY94 ML750Ã GD0373b

    HY628100ALP

    Abstract: No abstract text available
    Text: HYUNDAI H Y 6 2 8 1 O O A S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY628100A 128Kx -270t 1DD02-11-MAY9S HY6281OOAP HY628100ALP