11B2* DIODE Search Results

11B2* Diode

Abstract: 11b3 DIODE 11B2 Diode
Contextual Info: G E SOLI» -DI STATE DE|3ñ?SDñl 0 O I T 710 1 | Optoelectronic Specifications T ^ J'5 5 Photon Coupled Isolator H11B1,H11B2,H11B3 SYMJUL Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H 11B1, H 11B2 and H 11B3 are gallium arsenide,

H11B

Contextual Info: MOTOROLA SC DI O D ES /O PT O b 3 b 7 ESS DüûbbH? b 4E D 1 3 fl MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VDE UL C SA SETI ® SEMKO OEMKO BS NEM KO BABT H11B1* H 11B2* H11B3 [C TR = 500% Min] 6-Pin DIP Optoisolators Darlington Output (Low Input Current)

Contextual Info: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,

H11B1

Abstract: H11B2 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

R7411 2A

Abstract: PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100
Contextual Info: 8 6 7 5 2 3 4 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? DATE ? SCHEM,LIO/AUDIO ,MacBook Pro 15"

11B2 Diode

Abstract: 7b246
Contextual Info: f ¡J PERICOM 16-Bit to 32-Bit, Demux PCI Hot-Plug Bus Switch with -1.5V Undershoot Protection Product Features Product Description • R on is 5Q typical Pericom Semiconductor’s PI5C series of logic circuits are produced in the Company’s advanced sub-micron CMOS technology,

SO56-2

Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay

ZP80

Abstract: 11B2 Diode motorola diode ZP PI3LVD812 diode 6b1 10B1 10B2 11B1 11B2 12B1
Contextual Info: PI3LVD812 3.3V, 8-differential Channel Dual-LVDS Switch Targeted for 18-bit Displays Features Description • Designed specifically to switch Dual-LVDS signals • Full switch for 6-differential LVDS data signals and 2 differential LVDS clock signals • VDD = 3.3V ±10%

Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

18b2 diode

Abstract: DIODE 15B2 PI3LVD1012 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2
Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

1431 transistor equivalent

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

10B1

Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
Contextual Info: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

1Bn-12Bn

Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
Contextual Info: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH FEATURES: • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay

DIODE 10B3

Abstract: 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 QS316214 QS3162214 1A12A
Contextual Info: QS316214, QS3162214 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 12-Bit 3-to-1 Bus-Select Switch Q QUALITY SEMICONDUCTOR, INC. QS316214 QS3162214 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC

1562B

Contextual Info: IDTQS316233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX FEATURES: • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs

10B1

Abstract: 10B2 12B1 12B2 QS3162233 QS316233
Contextual Info: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

TSSOP IA2

Abstract: 5a1 DIODE 9b2 diode 10A1 10A2 11A1 11A2 QS316213 IA2 TSSOP-20
Contextual Info: QS316213, QS3162213 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch With iA1 = iA2 = iB2 Function Q QUALITY SEMICONDUCTOR, INC. QS316213 QS3162213 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

9b2 diode

Abstract: DIODE 15B2 10B1 10B2 12B1 12B2 16B1 IDTQS3165233 QS3165233
Contextual Info: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc

10A1

Abstract: 10B1 11A1 12A1 QS316292 diode 10b1 11B2 Diode
Contextual Info: QS316292, QS3162292 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 12-Bit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side QS316292 QS3162292 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS316212 QS316212 SO56-2
Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay

523a6

Abstract: 10B1 10B2 10B3 11B1 11B3 IDTQS316214 QS316214 9b3 diode 12b3 diode
Contextual Info: IDTQS316214 HIGH-SPEED CMOS 12-BIT 3-TO-1 BUS-SELECT SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 12-BIT 3-TO-1 BUS-SELECT SWITCH FEATURES: • • • • • • IDTQS316214 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

Contextual Info: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce