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11OMW Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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28-pin pickup ic
Abstract: hs574ak 28-pin pickup ic hs574ab HS574AS
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HS574A/SP674A 12-Bit 11OmW HS574A) SP674A) 28-pin pickup ic hs574ak 28-pin pickup ic hs574ab HS574AS | |
Contextual Info: •HYUNDAI HY 514370_Series SEMICONDUCTOR 256K xi6-b# cm os d ra m with 2 w e & w pb PRELIMINARY DESCRIPTION The HY514370 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access |
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HY514370 16-bit 400mii 40pin 40/44pin 1AC10-00-APR93 HY514370JC HY514370SLJC | |
HY53C464LS
Abstract: HY53C464 HY53C464S hy53c464lf HY53C464LF70
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HY53C464 330mil 18pin 1AA02-20-APR93 300BSC HY53C464LS HY53C464S hy53c464lf HY53C464LF70 | |
Contextual Info: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM. |
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HYM581000B HY514400A HYM581000BM/BLM 11-OmW 1BB05-01-FEB94 4b75D6à GDD32bà | |
Contextual Info: •HYUNDAI HY53C256 Series SEMICONDUCTOR 256K X 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynam ic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users. |
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HY53C256 300mil 330mil 01-20-APR93 4b75DBB 0DD131S |