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    GS88218

    Abstract: GS88236
    Text: Preliminary GS88218/36B-11/11.5/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 512K x 18, 256K x 36 ByteSafe 100 MHz–66 3.3 V VDD 8Mb S/DCD Sync Burst SRAMs 3.3 V and 2.5 V I/O Features on every cycle with no degradation of chip performance.


    Original     		PDF GS88218/36B-11/11 119-Bump x16/x32 GS88218 GS88236

    K9F2G08U0C

    Abstract: G388 180I 88436B
    Text: Preliminary GS88418/36B-200/180/166/150/133 512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 119-Bump BGA Commercial Temp Industrial Temp Features LBO input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of


    Original     		PDF GS88418/36B-200/180/166/150/133 119-Bump x18/x36 K9F2G08U0C G388 180I 88436B

    HM62G18512ABP-30

    Abstract: HM62G18512ABP-33 HM62G18512ABP-40 SA10 SA13 SA14 SA18 SA283A
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: WED2DL32512V *PRELIMINARY 512Kx32 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION  Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two


    Original     		PDF WED2DL32512V 512Kx32 133MHz

    GS840E18A

    Abstract: GS840E32A GS840E36A
    Text: Preliminary GS840E18/32/36AT/B-190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation


    Original     		PDF GS840E18/32/36AT/B-190/180/166/150/100 840E18A GS840E18A GS840E32A GS840E36A

    Untitled

    Abstract: No abstract text available
    Text: CY7C1361A CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0ns Fast clock speed: 150, 133, 117, and 100MHz Fast OE access times: 3.5 ns and 4.0 ns


    Original     		PDF CY7C1361A CY7C1363A 36/512K 100MHz CY7C1361A/CY7C1363A

    D-xxxV

    Abstract: GS88237BB-200 GS88237BB-200V GS88237BB-250IV GS88237BB-250V
    Text: GS88237BB/D-xxxV 119- & 165-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive


    Original     		PDF GS88237BB/D-xxxV 165-Bump 119-bump D-xxxV GS88237BB-200 GS88237BB-200V GS88237BB-250IV GS88237BB-250V

    GS8644V18

    Abstract: GS8644V18B GS8644V18B-250 GS8644V72
    Text: Product Preview GS8644V18 B/E /GS8644V36(B/E)/GS8644V72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Data Output Register. Holding FT high places the RAM in


    Original     		PDF GS8644V18 /GS8644V36 /GS8644V72 209-Pin 133MHz 8644Vxx GS8644V18B GS8644V18B-250 GS8644V72

    GS882Z18A

    Abstract: GS882Z18AB-166 GS882Z18AB-200 GS882Z18AB-225 GS882Z18AB-250 GS882Z36A
    Text: GS882Z18/36AB/D-250/225/200/166/150/133 119 & 165-Bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		PDF GS882Z18/36AB/D-250/225/200/166/150/133 165-Bump GS882Z18A GS882Z18AB-166 GS882Z18AB-200 GS882Z18AB-225 GS882Z18AB-250 GS882Z36A

    GS88218A

    Abstract: GS88218AB-200 GS88218AB-225 GS88218AB-250 GS88236A
    Text: GS88218/36AB/D-250/225/200/166/150/133 119- and 165-Bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the


    Original     		PDF GS88218/36AB/D-250/225/200/166/150/133 165-Bump 133MHz 88218A GS88218A GS88218AB-200 GS88218AB-225 GS88218AB-250 GS88236A

    GS882Z18BB-150V

    Abstract: GS882Z18BB-200V GS882Z18BB-250V
    Text: GS882Z18/36B B/D -xxxV 119-bump and 165-bump BGA Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


    Original     		PDF GS882Z18/36B 119-bump 165-bump GS882Z18BB-150V GS882Z18BB-200V GS882Z18BB-250V

    Untitled

    Abstract: No abstract text available
    Text: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


    Original     		PDF 100-lead 119-bump MT58L256L18F

    S 357

    Abstract: GS815018AB-250 GS815018AB-300 GS815018AB-333 GS815018AB-357
    Text: Product Preview GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode


    Original     		PDF GS815018/36AB-357/333/300/250 119-Bump 8150xxA S 357 GS815018AB-250 GS815018AB-300 GS815018AB-333 GS815018AB-357

    GS841E18A

    Abstract: GS841E18AT-180 256k x 18 119bga TS/103/02 B180
    Text: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 GS841E18A GS841E18AT-180 256k x 18 119bga TS/103/02 B180

    TS 100-12

    Abstract: GS840H18A GS840H18AT-150 GS840H18AT-166 GS840H18AT-180 GS840H32A GS840H36A B180
    Text: GS840H18/32/36AT/B-180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation • 3.3 V +10%/–5% core power supply


    Original     		PDF GS840H18/32/36AT/B-180/166/150/100 100-lead 840H18A 840E18 840H18 TS 100-12 GS840H18A GS840H18AT-150 GS840H18AT-166 GS840H18AT-180 GS840H32A GS840H36A B180

    13007B

    Abstract: GS882V37A GS882V37AB-200 GS882V37AB-225 GS882V37AB-250
    Text: GS882V37AB/D-250/225/200 119- and 165-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive


    Original     		PDF GS882V37AB/D-250/225/200 165-Bump 119-bump GS882V37AB/Dions 882V37A 13007B GS882V37A GS882V37AB-200 GS882V37AB-225 GS882V37AB-250

    GS8162Z18B

    Abstract: GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
    Text: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and


    Original     		PDF GS8162Z18/36B 165-Bump GS8162Z18B GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250

    GS8322ZV18

    Abstract: GS8322ZV18B GS8322ZV72
    Text: GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		PDF GS8322ZV18 /GS8322ZV36 /GS8322ZV72 8322ZV18 8322ZVxx GS8322ZV18B GS8322ZV72

    GS8644Z

    Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
    Text: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		PDF GS8644ZV18 /GS8644ZV36 /GS8644ZV72 209-Pin 133MHz 8644ZVxx GS8644Z GS8644ZV18B GS8644ZV72

    GVT71256ZC36B-7.5

    Abstract: CY7C1356A-100AC CY7C1356A GVT71512ZC18
    Text: PRELIMINARY CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 200, 166, 133, and 100 MHz • Fast access time: 3.2, 3.6, 4.2, 5.0 ns


    Original     		PDF CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 GVT71256ZC36B-7.5 CY7C1356A-100AC CY7C1356A GVT71512ZC18

    WED2ZL361MSJ35BC

    Abstract: WED2ZL361MSJ38BC WED2ZL361MSJ42BC WED2ZL361MSJ
    Text: WED2ZL361MSJ White Electronic Designs 1M x 36 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION n Fast clock speed: 250, 225, 200, 166, 150, 133MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an


    Original     		PDF WED2ZL361MSJ 133MHz WED2ZL361MSJ26BC WED2ZL361MSJ28BC WED2ZL361MSJ30BC WED2ZL361MSJ35BC WED2ZL361MSJ38BC WED2ZL361MSJ42BC WED2ZL361MSJ26BI* WED2ZL361MSJ28BI WED2ZL361MSJ35BC WED2ZL361MSJ38BC WED2ZL361MSJ42BC WED2ZL361MSJ

    CY7C1357A

    Abstract: GVT71512ZB18
    Text: 1CY7C1357A PRELIMINARY CY7C1355A/GVT71256ZB36 CY7C1357A/GVT71512ZB18 256Kx36/512Kx18 Flow-Thru SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 133, 117, and 100 MHz • Fast access time: 6.5, 7.0, 7.5, and 8.0 ns


    Original     		PDF 1CY7C1357A CY7C1355A/GVT71256ZB36 CY7C1357A/GVT71512ZB18 256Kx36/512Kx18 CY7C1357A GVT71512ZB18

    GS73024A

    Abstract: GS73024AB
    Text: Preliminary GS73024AB BGA Commercial Temp Industrial Temp 128K x 24 3Mb Asynchronous SRAM Features 8, 10, 12 ns 3.3 V VDD 119-Bump Ball Grid Array Package • Fast access time: 8, 10, 12 ns • CMOS low power operation: 250/200/170 mA at minimum cycle time


    Original     		PDF GS73024AB 119-Bump 119-bump, GS73024A GS73024AB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8162ZV18A B/D /GS8162ZV36A(B/D)/GS8162ZV72A(C) 119, 165, & 209 BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM 350 MHz–150 MHz 1.8 V VDD 1.8 V I/O Features cycles. • NBT (No Bus Turn Around) functionality allows zero wait


    Original     		PDF GS8162ZV18A /GS8162ZV36A /GS8162ZV72A GS8162ZVxxA