CX20206
Abstract: CXA1260Q-Z CXD1177Q CXD1178Q MN65701FHP MN6570F
Text: - • f f t s a 287 8 f-y h D - A n > ' < - 9 MB40968/40968V £ CXA1260Q -Z CXD1177Q C X D 1178Q MN6556A/S MN6570F MN65701FHP fò T C X 2 0 2 0 6 è ^ ''7 'r i l - y *•:*<*J Ä ± Ä 7 — — V - - 7 ~ - fö T fò T TFS 25 "C 25‘ C 25*C 25"C 2S°C
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MB40968/40968V
CXA1260Q-Z
CX20206Ã
CXD1177Q
CXD1178Q
MN6556A/S
MN6570F
MN65701FHP
30MSPS
35MSPS
CX20206
CXA1260Q-Z
MN65701FHP
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1178Q
Abstract: No abstract text available
Text: SONY C X D 1178Q 8-bit 40MSPS RGB 3-channel D/A Converter Description T h e C X D 1 1 7 8 Q is an 8 -b it h ig h -s p e e d D/A converter for video band use. It has an input/output equivalent to 3 channels of R, G and B. It is suitable for use of digital TV, graphic display, and others.
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1178Q
40MSPS
40MSPS
CXD1178Q
48PIN
FP-48P-L04
FP048-P
42/CO
1178Q
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Untitled
Abstract: No abstract text available
Text: SONY CXK77V1840GB -8 /1 0 /1 2 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P f Q l / 'f j j j f j Q f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This
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CXK77V1840GB
144-Word
18-bit
CXK77V1840GB
144-words
18-bits.
provi17
lbfi33
oooooe1234567
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U716
Abstract: U6915 1178Q
Text: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page
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DM2M36SJ
DM2M32SJ
2Mbx36/2Mbx32
U716
U6915
1178Q
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2Y202
Abstract: dt6168 1N12J
Text: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m
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2/15/20/25/35ns
IDT6168SA
100pW
IDT6168LA
T6168LA
20-pin
IDT61088A
/lDT6168LA
MIL-STD-883,
2Y202
dt6168
1N12J
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Untitled
Abstract: No abstract text available
Text: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2240Multibank
256-byte
Oper0J2-121
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Untitled
Abstract: No abstract text available
Text: p v F n h a n r pH dm2202/2212 edram V 1Mb x 4 Enhanced tynamic RAM i l Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes
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dm2202/2212
256-byte
DM2212)
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I/DAC80
Abstract: DAC80P
Text: B U R R -B R O W N • O B DAC80 DAC80P I AVAILABLE IN DIE Monolithic 12-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES resistors, as well as low integral and differential lin earity errors. Innovative circuit design enables the DAC80 to operate at supply voltages as low as ±11.4V
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DAC80
DAC80P
12-Bit
DAC80
118-mil
121-mil
12VDC
DAC80/80P
17313LS
I/DAC80
DAC80P
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Untitled
Abstract: No abstract text available
Text: DM2242/2252 EDRAM Multibank EDO 1Mb x 4 Enhanced Dynamic RAM P55Enhanced Æ È IVfemoiySystems ix. Product Specification Features •8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2242/2252
P55Enhanced
256-byte
DM2252)
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Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiy Systems be. DM 1M36SJ6/DM1M32SJ6 M ultibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mbx36 density by mounting nine1Mbx4EDRAMs, packaged in 28-pin plastic 90U packages, on a multi
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1M36SJ6/DM1M32SJ6
1Mbx36/1Mbx32
DM1M36SJ
1Mbx36
28-pin
DM2242
DM2252
DM1M32SJ6
DM1M36SJ6
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