ROSE-2
Abstract: No abstract text available
Text: Frequency Mixer ROSE-2 Typical Performance Curves Conversion Loss vs. IF @ RF=500.1 MHz Conversion Loss @ IF=30MHz 11.0 9.0 LO = +4dBm 8.6 9.8 LO = +7dBm 9.2 LO = +10dBm LO = +7dBm Conversion Loss dB Conversion Loss (dB) 10.4 8.2 7.8 8.6 7.4 8.0 7.0 7.4
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30MHz
10dBm
ROSE-2
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer ADE-2+ Typical Performance Curves Conversion Loss vs. IF @ RF=500.1MHz Conversion Loss @ IF=30MHz 12.0 7.0 LO = +4dBm 6.9 LO = +7dBm 10.2 LO = +10dBm Conversion Loss dB 10.8 Conversion Loss (dB) 11.4 6.8 6.7 9.6 6.6 9.0 6.5 8.4 6.4 7.8 6.3
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30MHz
10dBm
10MHz
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ROSE-2
Abstract: No abstract text available
Text: Frequency Mixer ROSE-2 Typical Performance Curves Conversion Loss vs. IF @ RF=500.1 MHz Conversion Loss @ IF=30MHz 11.0 9.0 LO = +4dBm 8.6 9.8 LO = +7dBm 9.2 LO = +10dBm LO = +7dBm Conversion Loss dB Conversion Loss (dB) 10.4 8.2 7.8 8.6 7.4 8.0 7.0 7.4
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30MHz
10dBm
ROSE-2
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tfm 1610
Abstract: No abstract text available
Text: Frequency Mixer TFM-2H+ Typical Performance Curves Conversion Loss vs. IF @ RF=510.1MHz Conversion Loss @ IF=30MHz 15.0 8.0 LO = +14dBm 7.8 LO = +17dBm 13.2 Conversion Loss dB Conversion Loss (dB) 14.1 LO = +20dBm 12.3 11.4 10.5 9.6 8.7 7.4 7.2 7.0 6.8 6.6
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30MHz
14dBm
17dBm
20dBm
tfm 1610
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer ADE-2 Typical Performance Curves Conversion Loss vs. IF @ RF=500.1MHz Conversion Loss @ IF=30MHz 12.0 7.0 LO = +4dBm 6.9 LO = +7dBm 10.2 LO = +10dBm Conversion Loss dB 10.8 Conversion Loss (dB) 11.4 6.8 6.7 9.6 6.6 9.0 6.5 8.4 6.4 7.8 6.3
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30MHz
10dBm
10MHz
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer TFM-2H+ Typical Performance Curves Conversion Loss vs. IF @ RF=510.1MHz Conversion Loss @ IF=30MHz 8.0 14.1 LO = +14dBm 13.2 LO = +17dBm 12.3 LO = +20dBm 7.8 Conversion Loss dB Conversion Loss (dB) 15.0 11.4 10.5 9.6 8.7 7.4 7.2 7.0 6.8 6.6
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30MHz
14dBm
17dBm
20dBm
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transistor fp 1016
Abstract: et 1102 EB 1038 diode et 1103 FP-035 1041B-3 57fp FP030
Text: Sommaire Summary Filtres cellule en Pi Pi type filters Modèle / Format Page s Model / Size FP 030 56 - 57 FP 030 FP 035 FP 040 58 - 59 FP 035 FP 040 FP 060 60 - 61 FP 060 FP 100 28,5 VCC 115 V - 400 Hz 115 V - 200 Hz à 1000 Hz FP 100 62 - 65 FP 170 28,5 VCC
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LAVI-25VH
Abstract: No abstract text available
Text: Frequency Mixer LAVI-25VH+ Typical Performance Curves Conversion Loss @ IF=250MHz 11.0 LO = +22dBm Conversion Loss dB 10.6 LO = +23dBm 10.2 LO = +24dBm 9.8 9.4 9.0 8.6 8.2 7.8 7.4 7.0 290 580 870 1160 1450 1740 2030 2320 2610 2900 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1450MHz
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LAVI-25VH+
250MHz
22dBm
23dBm
24dBm
1450MHz
LAVI-25VH
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208M7
Abstract: No abstract text available
Text: KTKK 1120–1128 Fax-on-Demand: 800 260-9099 (650) 361-6523 Assemblies Before ordering check with factory for most current data. As supplied (a) After unrestricted recovery (b) P D B dia. dia. Heat-recoverable screen Y Conductive hot-melt adhesive JO Hot-melt
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208M7XX-19-BXX-K-NS
208M7
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LAVI-25VH
Abstract: No abstract text available
Text: Frequency Mixer LAVI-25VH+ Typical Performance Curves Conversion Loss @ IF=250MHz 11.0 LO = +22dBm Conversion Loss dB 10.6 LO = +23dBm 10.2 LO = +24dBm 9.8 9.4 9.0 8.6 8.2 7.8 7.4 7.0 290 580 870 1160 1450 1740 2030 2320 2610 2900 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1450MHz
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LAVI-25VH+
250MHz
22dBm
23dBm
24dBm
1450MHz
LAVI-25VH
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CCITT p53
Abstract: CMESS
Text: Signal Sources Option 12 SINAD Measurement 2023A/B, 2025 Option 12 further enhances the versatility of the 2023A/B, 2025 range providing a complete receiver sensitivity test solution in an economical, space saving package. • High performance SINAD measurement
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023A/B,
RS-232
CCITT p53
CMESS
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mcl 03a
Abstract: MCL SRA-1
Text: FREQUENCY MIXERS Plug-In & Coaxial LEVEL 13 25 kHz to 7 GHz TFM / TUF ROK SBL / SIMA/ SRA ZMX ZEM ZP ZLW +13 dBm LO, up to +9 dBm RF MODEL NO. FREQUENCY MHz CONVERSION LOSS dB LO/RF Mid-Band m σ Max. x IF fL-fU LO-RF ISOLATION, dB Total Range Max. CAPD DATA
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TFM-12MH
TFM-42MH
DC-500
DC-250
DC-600
DC-1000
DC-400
mcl 03a
MCL SRA-1
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CCITT p53
Abstract: CCITT aeroflex+46880/114
Text: opt12iss4.qxd 01/Dec/2004 14:00 Page 1 Signal Sources Option 12 SINAD Measurement 2023A/B, 2025 Option 12 further enhances the versatility of the 2023A/B, 2025 range providing a complete receiver sensitivity test solution in an economical, space saving package.
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opt12iss4
01/Dec/2004
023A/B,
RS-232
CCITT p53
CCITT
aeroflex+46880/114
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TFM 5300
Abstract: mcl sbl 1 ALY 39 SYM-11MH SYM-1020MH ADE-25MH TFM-42MH c 6093 cd542 data sheet SBL-1MH
Text: FREQUENCY MIXERS Plug-In & Coaxial LEVEL 13 25 kHz to 7 GHz TFM / TUF ROK SBL / SIMA/ SRA ZMX ZEM ZP ZLW +13 dBm LO, up to +9 dBm RF MODEL NO. FREQUENCY MHz CONVERSION LOSS dB LO/RF Mid-Band m σ Max. x IF fL-f U LO-RF ISOLATION, dB CAPD DATA LO-IF ISOLATION, dB
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TFM-12MH
TFM-42MH
DC-500
DC-250
TB-03
TB-44b
TB-12
TB-03
TB-11
TFM 5300
mcl sbl 1
ALY 39
SYM-11MH
SYM-1020MH
ADE-25MH
TFM-42MH
c 6093
cd542 data sheet
SBL-1MH
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G990
Abstract: g991 8UHR110 7UHR110 CC-2F W1121 W1214 W592 W1159 G651
Text: I• A MvnP RATA ■m w n ■n 7-2JA Miniature w Volts Watts Lum ens M SCP Lite hours 'T sj hiiament shape 9mm R/ n»;«*.-» iviimcuuic Bayonet BA9s (MCC) 12 2 6.3 0.50 10,000 C-2F 1135 24 1.2 3.1 0.25 10,000 C-2F 1127 24 2 6.3 10,000 C-2F 1137 K nnn
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ColourGR110
7GR220
8UHR110
7UHR110
8UHR220
7UHR220
00-120V
L25/1
G990
g991
8UHR110
7UHR110
CC-2F
W1121
W1214
W592
W1159
G651
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LA6358M
Abstract: No abstract text available
Text: LA6358M Ma 1 1 2 7 a ¿ ; B l& 8172 . í SANYO ÜttÜTaTÄ? O ^ ^ IW lf È - a . - * No.1127 ¿ ? U ' A . T < í ; í i ' . LAÓ358M l i I^Sfilu*§fflIE[£]& frl*J«& L , E r - iilC * « U ^ i c r * 5 . I 5 I 1 ^ ^ i ftSÎ I Êi î f ó * < O ; j l S J t ig it « 0 ¡ & ¿ [ 5 ] í * , j E Ä p f l^ k f ; :
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LA6358M
LA6358M
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC55VL818FF-75#-84#-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL818FF is a synchronous static random access memory SRAM organized as 524,288 words
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TC55VL818FF-75#
TC55VL818FF
LQFP100-P-1420-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55VD818FF-133,-143,-150 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD818FF is a synchronous static random access memory SRAM organized as 524,288 words by 18
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TC55VD818FF-133
TC55VD818FF
LQFP100-P-1420-0
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Untitled
Abstract: No abstract text available
Text: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS
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RN1221,
RN1222,
RN1223,
RN1224
RN1225,
RN1226,
RN1227
800mA)
RN2221
RN1221
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Untitled
Abstract: No abstract text available
Text: 2 4 3 5 6 7 X X 6 32 1 Belegungsplan loading-Plan Y 6 321 Schirm Shield Gelb fellow Orange Orange Wei 6 White Blau Blue jbertragungseigenschaften nach ISO/1 EC 11801:2002: Class D. Schutzart: IP67/65 Temperaturbereich: -4 0 #C .„„t70*C transmission properties in accordance
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IP67/65
IP67/65,
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toshiba ta 1222
Abstract: TRANSISTOR 1221 RN1223
Text: T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER
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RN1221,
RN1222,
RN1223,
RN1224
RN1225,
RN1226,
RN1227
800mA)
RN2221--2227
55MAX.
toshiba ta 1222
TRANSISTOR 1221
RN1223
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bosch j1939
Abstract: CSI3644A CSI3645A RS232 to rj10 acon r series dc converter zigbee based vehicle access control system for various industrial purpose 2551 can MCP251x 0x401-0x47F traffic light at89c51
Text: by Jeff Bachiochi FROM THE BENCH Can You Speak CAN? Part 1 The Newest CAN Modules In this two-part article, Jeff introduces you to some of the newest CAN modules on the mar ket. Get ready to begin your own CAN-based system. he working day shall last eight
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Untitled
Abstract: No abstract text available
Text: MOLDED DIALLYL INSULATED TERMINALS DIALLYL PHTHALATE INSULATED TERMINALS M A T E R IA L S : D-:ai:yl P d h T a ts is recom m ended f ' co n tin u o u s d u ty tem ps up to 350° F . i t has a hiqh diem ctr breakdow n and nas r; 94 VO U P auny. T e rm in a l: Brass per QQ-B-626. A lloy 360
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QQ-B-626.
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CFY65
Abstract: CFY 65 siemens 230 97 o VXM05208
Text: SIEMENS AIGaAs/GaAs HEMT CFY 65 • Very low noise F = 1.2 dB max. at 12 GHz • Very high gain (G a = 11.5dB typ. at 12 GHz) • For low-noise front-end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VXM05208
Q62703-F101
Q62703-F102
E35L05
00b7534
CFY65
EHT08H7
EHT08I46
EHT08I48
CFY65
CFY 65
siemens 230 97 o
VXM05208
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