Laser diode Fabry-Perot
Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
Text: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser
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EYP-RWL-1120-00050-1300-SOT02-0000
Laser diode Fabry-Perot
laser diode lifetime
TEM00
ridge waveguide semiconductor laser
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BRM-1120-NS INFRARED RECEIVER MODULE ● Description 1. The BRM-1120-NS is miniaturized infrared receiver ●Package Dimensions: for remote control and other applications requiring improved ambient light rejection. 2. The separate PIN diode and preamplifier IC are
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BRM-1120-NS
BRM-1120-NS
1250pcs
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Abstract: No abstract text available
Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: October 31, 2008 October 31, 2008 Analog Semiconductor Products DCS/PCN-1120 Alert Type: PCN #: New manufacturing location PCN #: 1120 TITLE New assembly manufacturing location for SOT23-6 Unisem
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DCS/PCN-1120
OT23-6
OT23-6
ZXSC400E6TA
ZXSC410E6TA
ZXSC420E6TA
PCN-1120
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single phase inverter IGBT application schematic
Abstract: grundfos up 15 50 grundfos IGBT DRIVER SCHEMATIC 3 PHASE 3 phase IGBT gate driver Grundfos up Grundfos ups IR2x38 IR2x14 3 phase inverter simulation diagram
Text: Application Note AN-1120 Buffer Interface with Negative Gate Bias for Desat Protected HVICs used in High Power Applications By Marco Palma - International Rectifier Niels H. Petersen - Grundfos Table of Contents Page Introduction .2
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AN-1120
IR2x14
IR2x38
single phase inverter IGBT application schematic
grundfos up 15 50
grundfos
IGBT DRIVER SCHEMATIC 3 PHASE
3 phase IGBT gate driver
Grundfos up
Grundfos ups
3 phase inverter simulation diagram
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Untitled
Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 410 IFRMS = 650 IFSM = 16 VF0 = 2.5 rF = 4.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 05F4502 PRELIMINARY Doc. No. 5SYA 1120-01 July 98 Features • Patented free-floating silicon technology
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05F4502
CH-5600
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LYE65F
Abstract: 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L E65B-AACA-24-1 Q65110A2352 2800 617 LA E63F-EAFA-24-1 E658-V1AE-1-1
Text: Light Emitting Diodes | Lumineszenzdioden Package Gehäuse Type Bezeichnung En-ission oolor En-issionsf3rbe *GOfr ty p [n m ]/ Color coordi nates x/y k. V | 2ç (ty p ) (£0% Orden ng Code Bes:e nummer [mlm] [mA] n 710 . 1800 1450 Q65110A2763 1120 . 2800
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E658-V1AE-1-1
E65S-AABB-1-1
LSE65B-V1BE-1-1
Q65110A2763
Q65110A2784
Q65110A2762
E656-AABB-24-1
E85S-EACA-24-1
E65B-AACA-24-1
Q65110A2349
LYE65F
5630 osram
E656-AABB-26-1
Q65110A1852
LYE65F-BBCB-35-1-L
Q65110A2352
2800 617
LA E63F-EAFA-24-1
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Schnelle beschaltungslose Diode D1031SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 1120 A TC=85 °C IFSM VT0 23000 A 3570A (TC=55°C) 1,78 V rT 0,968 mΩ RthJC 10 K/kW Clamping Force 27 … 45 kN
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D1031SH
50/60Hz
50/60Hz
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1198A
Abstract: 1196-A RN820
Text: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*
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820/RN
250cm.
310cm
1198A
1196-A
RN820
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Untitled
Abstract: No abstract text available
Text: SKS 870F B6U 590 V16 Characteristics Symbol Conditions min. typ. max. Unit 870 A 635 950 A 560 1120 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase uncontrolled
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P16/200F
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HFA-0002
Abstract: HFA2-0002-5 HFA2-0002-9 HFA3-0002-5 HFA3-0002-9 HFA7-0002-5 HFA7-0002-9 HFA9P0002-5 HFA9P0002-9
Text: HFA-0002 Semiconductor September 1998 See CT ODUHFA1105 R P TE 1120, OLE OBS 100, HFA HFA1 Low Noise Wideband Operational Amplifier Features Description • Wide Gain Bandwidth Product . . . . . . . . . . . . . . . 1GHz The HFA-0002 is a very wideband, high slew rate, op amp,
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HFA-0002
HFA11
HFA-0002
05V/mV
100ns.
HFA2-0002-5
HFA2-0002-9
HFA3-0002-5
HFA3-0002-9
HFA7-0002-5
HFA7-0002-9
HFA9P0002-5
HFA9P0002-9
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Untitled
Abstract: No abstract text available
Text: DO - 8 PSM/PSMR 100K IF AV = 100 A PSMF/PSMFR 100K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800
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Abstract: No abstract text available
Text: DO - 9 PSM/PSMR 250K IF AV = 250 A PSMF/PSMFR 250K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800
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100 psm
Abstract: No abstract text available
Text: DO - 9 PSM/PSMR 320K IF AV = 320 A PSMF/PSMFR 320K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800
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Abstract: No abstract text available
Text: DO - 8 PSM/PSMR 150K IF AV = 150 A PSMF/PSMFR 150K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800
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psm 125
Abstract: psmr
Text: DO - 5 PSM/PSMR 70L PSM/PSMR 70K Silicon Power Diode IF AV = 70 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000
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psm 125
psmr
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"psm"
Abstract: 4014L psmr
Text: DO - 5 PSM/PSMR 40L PSM/PSMR 40K Silicon Power Diode IF AV = 40 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000
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"psm"
4014L
psmr
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612L
Abstract: No abstract text available
Text: DO - 4 PSM/PSMR 6 Silicon Power Diode IF AV = 6A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600 (V)
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6/12L
6/14L
6/16L
150junction
612L
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Abstract: No abstract text available
Text: DO - 4 PSM/PSMR 12 Silicon Power Diode IF AV = 12 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600
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PA-1120
Abstract: CN802 PA-1240 PA-1120RC CN901 monacor pa-1240 PA1120PTT monacor pa monacor pa1240 PA-1120RCD
Text: ELA-MISCHVERSTÄRKER FÜR 5 ZONEN PA MIXING AMPLIFIER FOR 5 ZONES PA-1120 PA-1120RC Best.-Nr. 17.0780 Best.-Nr. 23.2440 PA-1240 PA-1120PTT Best.-Nr. 17.0790 Best.-Nr. 23.2450 BEDIENUNGSANLEITUNG INSTRUCTION MANUAL MODE D’EMPLOI ISTRUZIONI PER L’USO GEBRUIKSAANWIJZING
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PA-1120
PA-1120RC
PA-1240
PA-1120PTT
PA-1120
CN802
PA-1240
PA-1120RC
CN901
monacor pa-1240
PA1120PTT
monacor pa
monacor pa1240
PA-1120RCD
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1606l
Abstract: No abstract text available
Text: DO - 4 PSM/PSMR 16 Silicon Power Diode IF AV = 16 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600
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16/16L
1606l
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10D1703
Abstract: 10D2303 10D2003
Text: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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10D2303
Apr-98
10D2003
10D1703
CH-5600
10D2303
10D2003
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psm 125
Abstract: 6008-K
Text: DO - 5 PSM/PSMR 60L PSM/PSMR 60K Silicon Power Diode IF AV = 60 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000
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60/10L
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60/14L
psm 125
6008-K
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Untitled
Abstract: No abstract text available
Text: DO - 4 PSM/PSMR 25 Silicon Power Diode IF AV = 25 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600
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25/16L
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D03316-473
Abstract: LM2675 LM2675M-5.0 594D 595D AN-1120 LM267X 50eV 1D11A
Text: National Semiconductor Application Note 1120 Wanda Garrett February 1999 Introduction generate voltage transients which can cause problems. For minimal inductance and ground loops, the traces which carry the highest currents input, ground, switch, and output signals are relatively wide and short. The external components
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LM2675
D03316-473
LM2675M-5.0
594D
595D
AN-1120
LM267X
50eV
1D11A
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