1120 DIODE Search Results

Laser diode Fabry-Perot

Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
Contextual Info: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BRM-1120-NS INFRARED RECEIVER MODULE ● Description 1. The BRM-1120-NS is miniaturized infrared receiver ●Package Dimensions: for remote control and other applications requiring improved ambient light rejection. 2. The separate PIN diode and preamplifier IC are

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: October 31, 2008 October 31, 2008 Analog Semiconductor Products DCS/PCN-1120 Alert Type: PCN #: New manufacturing location PCN #: 1120 TITLE New assembly manufacturing location for SOT23-6 Unisem

single phase inverter IGBT application schematic

Abstract: grundfos up 15 50 grundfos IGBT DRIVER SCHEMATIC 3 PHASE 3 phase IGBT gate driver Grundfos up Grundfos ups IR2x38 IR2x14 3 phase inverter simulation diagram
Contextual Info: Application Note AN-1120 Buffer Interface with Negative Gate Bias for Desat Protected HVICs used in High Power Applications By Marco Palma - International Rectifier Niels H. Petersen - Grundfos Table of Contents Page Introduction .2

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 410 IFRMS = 650 IFSM = 16 VF0 = 2.5 rF = 4.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 05F4502 PRELIMINARY Doc. No. 5SYA 1120-01 July 98 Features • Patented free-floating silicon technology

LYE65F

Abstract: 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L E65B-AACA-24-1 Q65110A2352 2800 617 LA E63F-EAFA-24-1 E658-V1AE-1-1
Contextual Info: Light Emitting Diodes | Lumineszenzdioden Package Gehäuse Type Bezeichnung En-ission oolor En-issionsf3rbe *GOfr ty p [n m ]/ Color coordi­ nates x/y k. V | 2ç (ty p ) (£0% Orden ng Code Bes:e nummer [mlm] [mA] n 710 . 1800 1450 Q65110A2763 1120 . 2800

Contextual Info: Technische Information / technical information Schnelle beschaltungslose Diode D1031SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 1120 A TC=85 °C IFSM VT0 23000 A 3570A (TC=55°C) 1,78 V rT 0,968 mΩ RthJC 10 K/kW Clamping Force 27 … 45 kN

1198A

Abstract: 1196-A RN820
Contextual Info: Gl 1N 248 B -» 1N 250 B 1N 1195 A -> 1N 1198 A RN 820/RN 1120 SGS-THOMSON tUEOTlEiMOSS S G S-THOnSON RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY . LOW FORWARD VOLTAGE DROP ABSOLUTE RATINGS limiting values Value Unit Average Forward Current*

Contextual Info: SKS 870F B6U 590 V16 Characteristics Symbol Conditions min. typ. max. Unit 870 A 635 950 A 560 1120 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase uncontrolled

HFA-0002

Abstract: HFA2-0002-5 HFA2-0002-9 HFA3-0002-5 HFA3-0002-9 HFA7-0002-5 HFA7-0002-9 HFA9P0002-5 HFA9P0002-9
Contextual Info: HFA-0002 Semiconductor September 1998 See CT ODUHFA1105 R P TE 1120, OLE OBS 100, HFA HFA1 Low Noise Wideband Operational Amplifier Features Description • Wide Gain Bandwidth Product . . . . . . . . . . . . . . . 1GHz The HFA-0002 is a very wideband, high slew rate, op amp,

Contextual Info: DO - 8 PSM/PSMR 100K IF AV = 100 A PSMF/PSMFR 100K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

Contextual Info: DO - 9 PSM/PSMR 250K IF AV = 250 A PSMF/PSMFR 250K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

100 psm

Contextual Info: DO - 9 PSM/PSMR 320K IF AV = 320 A PSMF/PSMFR 320K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

Contextual Info: DO - 8 PSM/PSMR 150K IF AV = 150 A PSMF/PSMFR 150K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

psm 125

Abstract: psmr
Contextual Info: DO - 5 PSM/PSMR 70L PSM/PSMR 70K Silicon Power Diode IF AV = 70 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000

"psm"

Abstract: 4014L psmr
Contextual Info: DO - 5 PSM/PSMR 40L PSM/PSMR 40K Silicon Power Diode IF AV = 40 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000

612L

Contextual Info: DO - 4 PSM/PSMR 6 Silicon Power Diode IF AV = 6A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600 (V)

Contextual Info: DO - 4 PSM/PSMR 12 Silicon Power Diode IF AV = 12 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600

PA-1120

Abstract: CN802 PA-1240 PA-1120RC CN901 monacor pa-1240 PA1120PTT monacor pa monacor pa1240 PA-1120RCD
Contextual Info: ELA-MISCHVERSTÄRKER FÜR 5 ZONEN PA MIXING AMPLIFIER FOR 5 ZONES PA-1120 PA-1120RC Best.-Nr. 17.0780 Best.-Nr. 23.2440 PA-1240 PA-1120PTT Best.-Nr. 17.0790 Best.-Nr. 23.2450 BEDIENUNGSANLEITUNG INSTRUCTION MANUAL MODE D’EMPLOI ISTRUZIONI PER L’USO GEBRUIKSAANWIJZING

1606l

Contextual Info: DO - 4 PSM/PSMR 16 Silicon Power Diode IF AV = 16 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600

10D1703

Abstract: 10D2303 10D2003
Contextual Info: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation

psm 125

Abstract: 6008-K
Contextual Info: DO - 5 PSM/PSMR 60L PSM/PSMR 60K Silicon Power Diode IF AV = 60 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000

Contextual Info: DO - 4 PSM/PSMR 25 Silicon Power Diode IF AV = 25 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600

D03316-473

Abstract: LM2675 LM2675M-5.0 594D 595D AN-1120 LM267X 50eV 1D11A
Contextual Info: National Semiconductor Application Note 1120 Wanda Garrett February 1999 Introduction generate voltage transients which can cause problems. For minimal inductance and ground loops, the traces which carry the highest currents input, ground, switch, and output signals are relatively wide and short. The external components