1K x 8 static ram dip22
Abstract: EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312
Text: Preliminary User’s Manual TM V850E/CA2 JUPITER 32-/16-bit Romless Microcontroller Hardware µPD703128, µPD703129 Document No. U15839EE1V0UM00 Date Published August 2003 NEC Corporation 2003 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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V850E/CA2
32-/16-bit
PD703128,
PD703129
U15839EE1V0UM00
electricity6130
1K x 8 static ram dip22
EASE-AN-4050
uPD703128
ca2 dn 1319
uPD703129
transistors F6 DD52
transistor dd52
F12a
U15839EE1V0UM00
upD70312
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PMC131
Abstract: UPD79F CA9H OPERATION MANUAL C28H AND C40H FMC01 C25H uPD70F3080 C67H uPD70F3080GJ-UEU CA6H
Text: Preliminary User’s Manual TM V850/DB1 AVALON 32-/16-bit Single-Chip Microcontroller Hardware µPD70F3080 µPD703081 Document No. U15011EE2V0UM00 Date Published October 2002 NEC Corporation 2002 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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V850/DB1
32-/16-bit
PD70F3080
PD703081
U15011EE2V0UM00
electri6130
PMC131
UPD79F
CA9H
OPERATION MANUAL C28H AND C40H
FMC01
C25H
uPD70F3080
C67H
uPD70F3080GJ-UEU
CA6H
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Intel 1103 DRAM
Abstract: D03B intel 1103 ram D018 D019 D032
Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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Y6432G1EG-80
432-WORD
64-BIT
THMY6416E1BEG
TC59SM708FT
64-bit
Intel 1103 DRAM
D03B
intel 1103 ram
D018
D019
D032
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POWER MODULE SVI 3101 D
Abstract: bc power module svi 3101 d SVI 3206 SVI 3101 POWER MODULE SVI 3101 temperature digital display JUMO Lan M UAA 1004 DP tda 8210 INTERFACING OUTPUT DISPLAYS 8212 TDA 9394
Text: \ V* %%ŸÎ\ \ k A. ' In December 1973 Intel shipped the first 8-bit, N-channel microprocessor, the 8080. Since then it has become the most widely usea microprocessor in the industry. Applications of the 8080 span from large, intelligent systems terminals to decompression computers for deep sea divers.
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33157/D MOTOROLA M C 33157 H alf Bridge C ontroller and D river for Industrial Linear Tlibes The MC33157 includes the oscillator circuit and two output channels to control a half-bridge power stage. One of the channels is ground-referenced. The second one is floating to
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MC33157/D
MC33157
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SO42
Abstract: skn 220 semikron SKN 71 so 32 skn4508
Text: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*
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SO-32
D0-203
SO-29
DO-205
D0-205
D0-30
SO-42
SO42
skn 220
semikron SKN 71
so 32
skn4508
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SMPTE-240M
Abstract: Camera Serial Interface Solid state CCIR ca 152 Solid state CCIR ca 151 schematic diagram of ip camera sensor "frame grabber" rockwell quartzsight
Text: Advance Information This d o cum e nt contains in fo rm a tio n on a pro d u ct under developm ent. The param etric in fo rm a tio n contains targe t param eters that are subject to change. Bt832 CMOS Camera Video Processor The Bt832 CMOS Camera Video Processor chip connects a Q uartzSight CMOS color
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Bt832
Bt832
Bt878
SMPTE-240M
Camera Serial Interface
Solid state CCIR ca 152
Solid state CCIR ca 151
schematic diagram of ip camera sensor
"frame grabber"
rockwell quartzsight
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2SC505
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO! 9097250 TOSHIBA 5b DE I ^ Q T T H S O b feC CD ISC RE TE /O PT O 074L2 000741H D f - 2 ? - y 230505"“ SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) 2SC506, Un i t in m m •f? 9.39 MAX HIGH VOLTAGE AMPLIFIER APPLICATIONS. 0 8.4 5 MAX,
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000741H
074L2
2SC506,
2SC505)
2SC506)
2SC505
2SC506
ODG7414
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gg3b
Abstract: No abstract text available
Text: FINAL COM’L: -15/20 ZI Advanced Micro Devices MACH355-15/20 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 144 Pins in PQFP ■ JTAG, 5-V, in-circult programmable ■ IEEE 1149.1 JTAG testing capability ■ 96 Macrocells ■ 15 ns tpD
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MACH355-15/20
PAL33V16"
MACH355
MACH355-15/20
Q25752b
QG3b31b
PQR144
144-Pin
gg3b
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pspice model for ttl
Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Text: m HARRIS RFD7N10LE, RFD7N10LESM RFP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q
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RFD7N10LE,
RFD7N10LESM
RFP7N10LE
O-220AB
O-251AA
RFP7N10LE
1e-30
13e-3
pspice model for ttl
7n10l
FP7N10LE
268E-5
TC1-1-13
358e9
pspice model for CMOS
TRS-10
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