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    1117 S TRANSISTOR Search Results

    1117 S TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1117 S TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1117 S Transistor

    Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 PDF

    UNR1111

    Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112 PDF

    1117 S Transistor

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 PDF

    UN1114

    Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●


    Original     		111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Rev. V3 Features •      Functional Schematic Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector Lead-Free 7 mm Laminate Package RoHS* Compliant and 260°C Reflow Compatible


    Original     		MAAP-010512 MAAP-010512 S2083 PDF

    ID1117

    Abstract: No abstract text available
    Text: MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz V2 Features •      Functional Schematic Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector Lead-Free 7 mm Laminate Package RoHS* Compliant and 260°C Reflow Compatible


    Original     		MAAP-010512 MAAP-010512 ID1117 PDF

    MAAP-010512

    Abstract: No abstract text available
    Text: MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz V2 Features •      Functional Schematic Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector Lead-Free 7 mm Laminate Package RoHS* Compliant and 260°C Reflow Compatible


    Original     		MAAP-010512 MAAP-010512 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		UNR111x UN111x UNR1110 UNR1111 UNR1112 PDF

    st c 1117 ld 25 regulator

    Abstract: 1117s33 1117V33 1117V33C 1117-D33 1117DT33 1117-s33 1117S33C ld1117 y 1117-D50
    Text: L D 1117 SERIES S G S -T H O M S O N LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS P R E L IM IN A R Y DATA • LOW DROPOUT VOLTAGE 1VTYP . 2.85V DEVICE PERFORMANCES ARE SUITABLE FOR SCSI-2 ACTIVE TERMINATION ■ OUTPUT CURRENT UP TO 800mA . FIXED OUTPUT VOLTAGE OF: 2.5V, 2.85V,


    OCR Scan     		800mA T-223 LD1117 800mA st c 1117 ld 25 regulator 1117s33 1117V33 1117V33C 1117-D33 1117DT33 1117-s33 1117S33C ld1117 y 1117-D50 PDF

    gs 1117 ax

    Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
    Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range


    OCR Scan     		ALD1107/ALD1117 1107/ALD 107/A ALD1106 ALD1106 1107/A ALD1101 LD1102 LD1103) gs 1117 ax 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117 PDF

    capacitor 1nj 400

    Abstract: X8862L
    Text: 19-1117: Rev 0 :8 /9 6 L o w - C o s t , L o w - Dr o p o u t , Du a l L i n e a r R e g u l a t o r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from + 2V to +11V with external resistors. The input


    OCR Scan     		MAX8862 250mA 100mA, 160mV. capacitor 1nj 400 X8862L PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR THE 4TH GENERATION SILICON N CHANNEL MOS TYPE GT30J322 Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed


    OCR Scan     		GT30J322 PDF

    GT50J322

    Abstract: No abstract text available
    Text: TOSHIBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf=0.25/*s Typ. (l£ = 50A)


    OCR Scan     		GT50J322 GT50J322 PDF

    GT30J322

    Abstract: No abstract text available
    Text: TOSHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed


    OCR Scan     		GT30J322 GT30J322 PDF

    IC IL 1117

    Abstract: im 1117 1117 S 3,3 Transistor 1117 S Transistor
    Text: TO SHIBA GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 THE 4TH GENERATION U n it in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement-Mode High Speed : tf= 0 .2 5 //s Typ. (Iq = 50A)


    OCR Scan     		GT50J322 IC IL 1117 im 1117 1117 S 3,3 Transistor 1117 S Transistor PDF

    TRANSISTOR BJ 003

    Abstract: 2-10R1C GT5J301
    Text: TO SHIBA GT5J301 GT5 J 3 0 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 ±0.3 r The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. (l£ = 5A) Low Saturation Voltage : V ce (sat)~ 2.7V (Max.) (l£ = 5A)


    OCR Scan     		GT5J301 TRANSISTOR BJ 003 2-10R1C GT5J301 PDF

    1117 S Transistor

    Abstract: TOSHIBA bat Transistor b 1117
    Text: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode


    OCR Scan     		GT5J311 GT5J311 30//s 1117 S Transistor TOSHIBA bat Transistor b 1117 PDF

    1117 S Transistor

    Abstract: No abstract text available
    Text: TO SHIBA GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10±0.3 03.2 ±0•2 2.710.2 m The 3rd Generation Enhancement-Mode High Speed : tf = 0.30,«s Max. (Iq = 5A)


    OCR Scan     		GT5J301 1117 S Transistor PDF

    GT10J312

    Abstract: CP20A
    Text: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode


    OCR Scan     		GT10J312 GT10J312, 100fl CP20A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT5J301 GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 5A)


    OCR Scan     		GT5J301 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)


    OCR Scan     		GT10J312 GT10J312, GT10J312 PDF

    1117 S Transistor

    Abstract: No abstract text available
    Text: GT10J312,GT10J312 SM TO SHIBA GT10J312, GT10J312(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode High Speed


    OCR Scan     		GT10J312 GT10J312, GT10J312 30//s 1117 S Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE | BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


    OCR Scan     		bbS3T31 BFR101A BFR101B PDF

    Untitled

    Abstract: No abstract text available
    Text: IMT2 h 7 > y ^ $ /'Transistors IM T2 — T<vu_51y *h 'I'i ff l / General Small Signal Amp. Isolated Mini-Mold Device • <8:1 • ^ -}fj\rj£ /D im e n s io n s U n it: mm 1) SMT (SC-59) £ (5 l— (*15 2 (SCO 5 7 > y ^ $ A fA o t i ' 5 c 2) S M T r o g liH iilit C c f c U ,


    OCR Scan     		51yff SC-59) PDF