1114 TRANSISTOR Search Results

1117 S Transistor

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and

UNR1111

Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

1117 S Transistor

Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

Contextual Info: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the

transistor bI 240

Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Contextual Info: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

sensor QRD1114

Abstract: QRD1114 reflective 1114 transistor C 1114 transistor
Contextual Info: REFLECTIVE OBJECT SENSOR IPT0ELEC1IIIIC5 QRD1113/1114 ii"' , ^ ' ' ü. .iUJ-'l-¿W.P. . PACKAGE DIMENSIONS T h e QRD1113/1114 reflective sensors consist of an PIN 1 INDICATOR infrared emitting diode and an NPN silicon — .083 2.11 II phototransistor m ounted side by side in a black plastic

QRB1113

Abstract: LTA 703 S
Contextual Info: REFLECTIVE OBJECT SENSORS OP T O E L E C T H 0 N l t S QRB1113/1114 PACKAGE DIMENSIONS DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: Ea REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 PACKAGE DIMENSIONS PIN 1 INDICATOR -.083 2.11 O P T IC A L ' C E N T E R LIN E ” -I , » - .240 p i n (6.10) .120 (3.05)- .173 (4.39) DESCRIPTION The QRD1113/1114 reflective se n so rs consist of an

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

UN1114

Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●

QRB1113

Abstract: QRB1114
Contextual Info: [*Q REFLECTIVE OBJECT SENSOR! QPTOELECTRQHICS QRB1113/11K DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared em itting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

KSR1114

Abstract: KSR2114 9vv marking
Contextual Info: KSR2114 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=47K£1) • C om plem ent to K S R 1114 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

26iK

Contextual Info: 19-1114; Rev 1:8/96 J \A Æ X \/V \ High Precision 10 Voit Reference _ General Description _ Features Maxim's MX581 is a three-terminal, temperature compen­ sated, band-gap voltage reference which provides a preclse'IO.OOV output from an unregulated input of 12.5V to

TO39 package laser

Abstract: 15c6h
Contextual Info: 19-1114; Rev 1:8/96 J \A Æ X \/V \ High Precision 10 Voit Reference _ General Description _ Features Maxim's MX581 is a three-terminal, temperature compen­ sated, band-gap voltage reference which provides a preclse'IO.OOV output from an unregulated input of 12.5V to

MX581

Abstract: MX581JCSA MX581JESA MX581JH MX581KCSA MX581KESA MX581KH MX581SH MX581TH
Contextual Info: 19-1114; Rev 1:8/96 J \A Æ X \/V \ High Precision 10 Voit Reference _ General Description _ Features Maxim's MX581 is a three-terminal, temperature compen­ sated, band-gap voltage reference which provides a preclse'IO.OOV output from an unregulated input of 12.5V to

74c240

Abstract: transistor wm 02 a 3pin TO-39 CASE connection MX581KH transistor wm a 3pin MX581 MX581JCSA MX581JH MX581KESA MX581SH
Contextual Info: 19-1114; Rev 1; 8/96 / M y i X I / M H igh Precision 10 Volt Reference _ G e n e ra l D escH ption _FaafuTM Maxim's MX581 is a three-terminal, temperature compen­ sated, band-gap voltage reference which provides a pre­

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S B 1114 is designed fo r aud io freq uency pow er a m p lifie r and s w itch ing a p p lic a tio n , especially in H y b rid Integrated C ircuits, FEATURES

1mt3

Contextual Info: yi/L/IXL/l/l 19-1114; Rev 1:8/96 High Precision IO Volt Reference _ G onoral D escription _ Features Maxim's MX581 is a three-terminal, temperature compen­ sated, band-gap voltage reference which provides a pre­ cise 10.00V output from an unregulated input of 12.5V to

Contextual Info: 19-1114: R»v 1:8/96 w l y i x i y n High Precision 10 Volt Reformncm _ Q eneral D escription _ Features Maxim's MX581 is a three-terminal, temperature compen­ sated, band-gap voltage reference which provides a pre­ cise '10.00V output from an unregulated input of 12.5V to

Contextual Info: U U HFA1114 H A R R IS S E M I C O N D U C T O R 850MHz Video Cable Driving Buffer Novem ber 1996 Features Description • Access to Summing Node Allows Circuit Customization T h e H FA 1114 is a closed loop Buffer featuring user program m able gain and ultra high speed performance.

ECG1114

Contextual Info: P H IL IP S E C G INC 17E bbSaiSfl DGD4QS3 3 r. T-74-05-01 - WV V . T E E ü r e E C G KÜ 3 AUDIO AMPLIFIER s e m ic o n d u c t o r s • • • • 1114 OUTPUT POWER 4.5W 14V-4 0 LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE M E C H A N IC A L DATA

Contextual Info: SEMICONDUCTOR DICE PROCESS CHARTS TRANSISTOR DICE PROCESS CHART SW IT C H IN G T R A N S IST O R S: Sample evaluation of all batches on switching parameters HIGH FREQ U EN CY T R A N S IST O R S: Sample evaluation of all batches on fT and capacitance 11-13

MA42120

Contextual Info: Silicon Low Noise Bipolar Transistors MA42120 Series Description Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency = 100 to 600 MHz Geometry = 70 This series of NPN epitaxial silicon planar transistors is designed for 100 MHz to 1 GHz amplifiers and low power

Contextual Info: Il Silicon Low Noise Bipolar Transistors P • 5bM551M 0 D 0 m 55 7 H MIC n/A-con seuiconDtBRLNûton MA42120 Series Description 7% 3 / v ^ Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency - 100 to 600 MHz Geometry - 70 This series of NPN epitaxial silicon planar transistors is