1111A Search Results

Contextual Info: IFSC-1111AZ-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Material categorization: For definitions of

Contextual Info: MN103S97N Type MN103S97N under development Command ROM (x× 64-bit) 512 K-byte Data RAM (×× 32-bit) 24 K-byte Package MBGA255-C-1111A *Lead-free Minimum Instruction Execution Time 16 ns (at 1.65 V to 1.95 V, 60 MHz) Interrupts • RESET • IRQ × 11 • NMI • Key input • Timer × 40 • Input capture × 16 • PWM × 5 • SIF × 17

Contextual Info: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A (ES (Engineering Sample) available) 16.7 ns (at 2.7 V to 3.6 V, 60 MHz)

Contextual Info: MN103S97N Type MN103S97N MN103SF66R Mask ROM FLASH ROM byte 512K 1024K RAM (byte) 24K 40K Internal ROM type MBGA255-C-1111A Package (Lead-free) Minimum Instruction Execution Time 25 ns (at 1.65 V to 1.95 V, 40 MHz) • Interrupts RESET, IRQ x 11, NMI, Key input, Timer × 40, Input capture × 16, PWM × 5, SIF × 17, DMA × 12, WDT, A/D, System error

MN103SF66R

Abstract: TM37 AN12 AN18 MN103S97N
Contextual Info: MN103S97 Series MN103S97N MN103SF66R Mask ROM FLASH ROM byte 512K 1024K RAM (byte) 24K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time MBGA255-C-1111A 25 ns (at 1.65 V to 1.95 V, 40 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 40. Input capture × 16. PWM × 5. SIF × 17. DMA × 12. WDT. A/D. System error

Contextual Info: IFSC-1111AZ-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Compliant to RoHS Directive 2011/65/EU APPLICATIONS

Contextual Info: MN103S97N Type MN103S97N under development Command ROM (x× 64-bit) 512 K-byte Data RAM (×× 32-bit) 24 K-byte Package MBGA255-C-1111A *Lead-free Minimum Instruction Execution Time 16 ns (at 1.65 V to 1.95 V, 60 MHz) Interrupts • RESET • IRQ × 11 • NMI • Key input • Timer × 40 • Input capture × 16 • PWM × 5 • SIF × 17

mn103sd

Contextual Info: MN103SD0 Series MN103SD0N MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A (Under development) 16.7 ns (at 1.65 V to 1.95 V, 60 MHz) • Interrupts

Contextual Info: MN103SK7 Series MN103SK7N Type MN103SK7R Mask ROM Internal ROM type ROM byte 512K 1024K RAM (byte) 32K 40K Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

Contextual Info: MN103S97 Series MN103S97N MN103SF66R Mask ROM FLASH ROM byte 512K 1024K RAM (byte) 24K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time MBGA255-C-1111A 25 ns (at 1.65 V to 1.95 V, 40 MHz) • Interrupts RESET, IRQ x 11, NMI, Key input, Timer × 40, Input capture × 16, PWM × 5, SIF × 17, DMA × 12, WDT, A/D, System error

Contextual Info: MN103S97N Type MN103S97N under development Command ROM (x× 64-bit) 512 K-byte Data RAM (×× 32-bit) 24 K-byte Package MBGA255-C-1111A *Lead-free Minimum Instruction Execution Time 16 ns (at 1.65 V to 1.95 V, 60 MHz) Interrupts • RESET • IRQ × 11 • NMI • Key input • Timer × 40 • Input capture × 16 • PWM × 5 • SIF × 17

Contextual Info: IFSC-1111AB-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Material categorization: For definitions of

MN103S97N

Contextual Info: MN103S97N Type MN103S97N under development Command ROM (x× 64-bit) 512 K-byte Data RAM (×× 32-bit) 24 K-byte Package MBGA255-C-1111A *Lead-free Minimum Instruction Execution Time 16 ns (at 1.65 V to 1.95 V, 60 MHz) Interrupts • RESET • IRQ × 11 • NMI • Key input • Timer × 40 • Input capture × 16 • PWM × 5 • SIF × 17

Contextual Info: IFSC-1111AZ-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Material categorization: For definitions of

Contextual Info: IFSC-1111AB-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Compliant to RoHS Directive 2011/65/EU APPLICATIONS

Contextual Info: IFSC-1111AB-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Material categorization: For definitions of

Contextual Info: MN103S97 Series MN103S97N MN103SF66R Mask ROM FLASH ROM byte 512K 1024K RAM (byte) 24K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time MBGA255-C-1111A 25 ns (at 1.65 V to 1.95 V, 40 MHz) • Interrupts RESET, IRQ x 11, NMI, Key input, Timer × 40, Input capture × 16, PWM × 5, SIF × 17, DMA × 12, WDT, A/D, System error

mn103sd

Abstract: 76-P-16 UBGA257-P-1111A
Contextual Info: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

2SC4591

Abstract: 2SC4591XM-TL-E SC-59A 2SC459
Contextual Info: 2SC4591 Silicon NPN Epitaxial REJ03G0728-0300 Previous ADE-208-1111A Rev.3.00 Aug.10.2005 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “XM–”.

Contextual Info: IFSC-1111AB-01 Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Compliant to RoHS directive 2002/95/EC APPLICATIONS STANDARD ELECTRICAL SPECIFICATIONS

Contextual Info: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

IFSC1111

Contextual Info: IFSC-1111AZ-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Material categorization: For definitions of

Contextual Info: IFSC-1111AB-01 www.vishay.com Vishay Dale Low Profile, High Current Inductors FEATURES • Shielded construction • Frequency range up to 5.0 MHz • Handles high transient current spikes without saturation • Material categorization: For definitions of

MN103SK7Q

Abstract: UBGA257-P-1111A MN103SK7R MN103SK7 MN103S
Contextual Info: MN103SK7 Series MN103SK7N Type MN103SK7Q MN103SK7R Mask ROM Internal ROM type ROM byte 512K RAM (byte) 32K Package (Lead-free) Minimum Instruction Execution Time 768K 1024K 40K UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error