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    11.171 Search Results

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    11.171 Price and Stock

    TE Connectivity 61117-1

    CONN SOCKET 14-20AWG CRIMP TIN
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    TME 61117-1 10,000
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    Interstate Connecting Components 61117-1 107,845
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    Richardson RFPD 61117-1 20
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    New Advantage Corporation 61117-1 120,000 1
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    NTEMALL 61117-1 10,009
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    Sager 61117-1 5,000
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    Molex 0532611171

    CONN HEADER SMD R/A 11POS 1.25MM
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    DigiKey 0532611171 Digi-Reel 7,068 1
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    0532611171 Reel 5,000 1,000
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    Texas Instruments TLV1117-18IDCYR

    IC REG LIN 1.8V 800MA SOT223-4
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    DigiKey TLV1117-18IDCYR Digi-Reel 2,331 1
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    Win Source Electronics TLV1117-18IDCYR 54,000
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    UMW LD1117-1.2

    SOT223-3L LINEAR VOLTAGE REGULAT
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    Texas Instruments TLV1117-15CDCYR

    IC REG LIN 1.5V 800MA SOT223-4
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    DigiKey TLV1117-15CDCYR Cut Tape 1,449 1
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    Rochester Electronics TLV1117-15CDCYR 83,771 1
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    11.171 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11171 Desco Industries Accessories, Static Control, ESD, Clean Room Products, STCKY WH 18X36'' 30SHT 8 PER CAS Original PDF
    11171.1 CONTA-CLIP PLUG-IN CONNECTOR Original PDF
    11171.4 CONTA-CLIP PLUG-IN CONNECTOR Original PDF
    111715-8 Tyco Electronics Pin and Pinless Headers (AMP-LATCH); 39/40 LOW PROFILE HEADER ( AMP ) Scan PDF
    111715-8 Tyco Electronics Pin and Pinless Headers (AMP-LATCH); 39/40 LOW PROFILE HEADER ( AMP ) Scan PDF
    111715-8 Tyco Electronics Pin and Pinless Headers (AMP-LATCH); 39/40 LOW PROFILE HEADER ( AMP ) Scan PDF
    1-117169-3 Tyco Electronics .100, .125, .150, .156 Centerline Press-Fit Connectors (AMP PACE and AMP ECONOMATE); CARD GUIDE ECON I ( AMP ) Original PDF
    1-117169-3 Tyco Electronics .100, .125, .150, .156 Centerline Press-Fit Connectors (AMP PACE and AMP ECONOMATE); CARD GUIDE ECON I ( AMP ) Scan PDF
    1-117169-3 Tyco Electronics .100, .125, .150, .156 Centerline Press-Fit Connectors (AMP PACE and AMP ECONOMATE); CARD GUIDE ECON I ( AMP ) Scan PDF
    1-117169-3 Tyco Electronics .100, .125, .150, .156 Centerline Press-Fit Connectors (AMP PACE and AMP ECONOMATE); CARD GUIDE ECON I ( AMP ) Scan PDF
    1-117169-3 Tyco Electronics .100, .125, .150, .156 Centerline Press-Fit Connectors (AMP PACE and AMP ECONOMATE); CARD GUIDE ECON I ( AMP ) Scan PDF

    11.171 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original
    PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    usb 20

    Abstract: jim Williams 5401B INCOMING RAW MATERIAL INSPECTION ha 71741 VHDL CODE FOR PID CONTROLLERS usb trackball mouse transistor NEC D 882 p compaq 7500 nec d 882 p datasheet
    Text: Universal Serial Bus Specification Compaq Hewlett-Packard Intel Lucent Microsoft NEC Philips Revision 2.0 April 27, 2000 Universal Serial Bus Specification Revision 2.0 Scope of this Revision The 2.0 revision of the specification is intended for product design. Every attempt has been made to ensure a


    Original
    PDF

    nec 14305

    Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


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    PDF 2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751

    2N3033

    Abstract: No abstract text available
    Text: , One, J. C/ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18


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    PDF 2N3033 2N3033 200mA 100mA

    148235

    Abstract: A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237
    Text: Agilent AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Features • Wide frequency range: 16 - 32 GHz • High gain: 22 dB • Low 50 Ω Noise Figure: 2.6 dB Chip Size: 1900 x 800 mm 74.8 x 31.5 mils Chip Size Tolerance: ± 10mm (± 0.4 mils) Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)


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    PDF AMMC-6231 AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 5989-1957EN 148235 A004R AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237

    63387

    Abstract: 147709 51952 148235 A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 60673 82291
    Text: AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)


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    PDF AMMC-6231 AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 5989-3942EN AV02-1288EN 63387 147709 51952 148235 A004R AMMC-6231-W10 AMMC-6231-W50 60673 82291

    554-1

    Abstract: 2SC5435 2SC5600
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    136.21

    Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
    Text: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5


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    PDF TGA4501-SCC TGA4501-EPU 136.21 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815

    5E25

    Abstract: 2SC5600
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original
    PDF PA891TC S21e2 2SC5600) 2SC5600 PA891TC-T1 5E25 2SC5600

    marking 2w

    Abstract: 2SC5600 2SC5737
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)


    Original
    PDF PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737

    2SC5435

    Abstract: 2SC5600 of ic 3915
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications


    Original
    PDF PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 of ic 3915

    2SC5751

    Abstract: nec 14305 2SC5751-T2 P15657JJ1V0DS
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF 2SC5751 2SC5751-T2 2SC5751 nec 14305 2SC5751-T2 P15657JJ1V0DS

    2SC5600

    Abstract: 2SC5668
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SC5600

    Abstract: 2SC5737 marking 2w IC 7432 NAME
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    ZO 607 MA

    Abstract: 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5436, 2SC5600)


    Original
    PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 ZO 607 MA 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537

    ha 1452

    Abstract: 10.3814 10.0729 10.3815 112-361 STA-1100 43652 10.1550 101239 10.5022
    Text: EPIC CONNECTORS OLFLEX ® C A BL E “The Perfect Connection” 800-774-3539 www.lappusa.com EPIC® CONNECTORS Rectangular Industrial Connectors: Technical Data Overview 1. Strain Relief: Strain Relief provides a seal between the cable and the connector housing. It may also be


    Original
    PDF

    irf350

    Abstract: 1RF35 2clg
    Text: HE D I MflSS4S2 GQOTISE T | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.304G T - lî z L l— INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF3SO fo IRF351 IRF3SS IM - C h a n n e l IRF353 Features: 400 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International


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    PDF IRF351 IRF353 G-134 irf350 1RF35 2clg

    Untitled

    Abstract: No abstract text available
    Text: T • bb53131 D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The


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    PDF bb53131 D3333t BFT93W OT323 BFT93W BFT93.

    Untitled

    Abstract: No abstract text available
    Text: REVISION AF MEC1-1XX-XX-XX-D-RAX-XX-SL-XX PATENT NUMBER 6159045 DO NOT SCALE FROM THIS PRINT No OF POSITIONS- 1 -05, -08, -20, -30, -40, -50 SEE FIG 1 -60 & -70 (SEE FIG 2, SHT 3) (PER ROW) "D" REF • ^ — OPTION -TR: TAPE & REEL (SUBSTITUTE -T: FOR-TR:


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    PDF 000COMB

    Untitled

    Abstract: No abstract text available
    Text: 5D-39900-007 NO. OF CI RC. DI M. DIM. DI M. DIM. "A" "B" "C" " D" ASSEMBLY MATERI AL NO. STANDARD 1 ASSEMBLY MATERI AL NO. ( - 10AV O P T . 1 18.2 1 .721 3.81 1.1501 1 2 . 80 1 .5041 8.8 1.351 3 9 9 0 0 1 8 02 399 0 2 1 8 02 03 22.0 1 .871 7.62 1.3001 16.61


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    PDF 5D-39900-007 9069XX

    MARKING CODE 42t

    Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


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    PDF BFT93W OT323 BFT93W BFT93. MBCB70 OT323. MARKING CODE 42t Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 FC 0137

    Philips FA 564

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


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    PDF BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564

    TRANSISTOR D 5702

    Abstract: OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 BFT93W FC 0137 transistor 1661 equivalent 206 transistor specification sheet
    Text: m □ 0 3 2 2 3 ‘ì 3 2 0 H I A P X N A PIER P H I L I P S / D I S C R E T E bTE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEA TU R E S D ES C R IPTIO N • High power gain Silicon PNP transistor in a plastic, S O T 323 S-mini package. The


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    PDF BFT93W OT323 BFT93W BFT93. MBCS70 OT323. TRANSISTOR D 5702 OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 FC 0137 transistor 1661 equivalent 206 transistor specification sheet

    C0840

    Abstract: I100R
    Text: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED 89 AUG 18 Add figure 4. Technical changes to 1.3, 1.4» table I, and table II. Change terminal connections. Editorial changes throughout. REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARDIZED


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    PDF 5962-8772801EX 10H519/BEAJC 5962-8772801FX 10H519/BFAJC 5962-87728012X 10H519M/B2AJC C0840 I100R