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    10V SMD Search Results

    10V SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    10V SMD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A5E capacitor

    Abstract: No abstract text available
    Text: CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100|iA typ at IOOji A load . The 10V output is accurate within ±2% and supplies


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    CS8311 100mA CS8311 400mV. 200mV CS8311YD8 CS8311YDR8 A5E capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: CS8311 CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100µA typ. at 100µA load . The 10V output is accurate within ±4% and supplies


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    CS8311 100mA CS8311 400mV. MS-012 CS8311YD8 CS8311YDR8 PDF

    step down Voltage Regulator 230 volt to 150 volt

    Abstract: No abstract text available
    Text: CS8311 CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100µA typ. at 100µA load . The 10V output is accurate within ±4% and supplies


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    CS8311 100mA CS8311 400mV. MS-012 CS8311YD8 CS8311YDR8 step down Voltage Regulator 230 volt to 150 volt PDF

    COBRA5272

    Abstract: sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2
    Text: 5 4 3 2 1 D D +3.3V Switcher L2 U4 100nF SMD0805 + + C4 Power D14 LED Low Current + 220µF/10V SMD 1812 R1 1k C3 LM2596-3.3/TO263 Ringkern 35µH 220µF/10V SMD 1812 FB ON/OFF 2 220µF/10V SMD 1812 100nF SMD0805 4 5 OUT D13 B + VIN C12 C1 CON 1 C2 1000µF/35V radial


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    100nF SMD0805 F/10V LM2596-3 3/TO263 SCHOTTKY31 SMD1812 COBRA5272 sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC MOSFET SMD Type Product specification KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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    KDS2572 PDF

    ja smd

    Abstract: IC MOSFET QG smd diode fr
    Text: IC IC SMD Type N-Channel UltraFET Trench MOSFET KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


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    KDS2572 ja smd IC MOSFET QG smd diode fr PDF

    Untitled

    Abstract: No abstract text available
    Text: Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE D escription The CS8311 is a precision 10V m icropow er voltage regulator w ith very low quiescent current 100//A typ. at 100/iA load . The 10V o u tp u t is accurate w ith in +4% an d supplies


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    100mA CS8311 100//A 100/iA 400mV. MS-012 CS8311YD8 CS8311YDR8 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7460 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ 10V,Ta = 25 ID 12 Continuous Drain Current, VGS @ 10V,TA = 70 ID 10 Pulsed Drain Current*1 IDM 100 Power Dissipation Ta = 25


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    KRF7460 PDF

    KRF7805Z

    Abstract: No abstract text available
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25


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    KRF7805Z KRF7805Z PDF

    smd diode 44a

    Abstract: isd 1710 smd 44A FDB3672 KDB3672 PF247
    Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3672 FDB3672 TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2


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    KDB3672 FDB3672) O-263 smd diode 44a isd 1710 smd 44A FDB3672 KDB3672 PF247 PDF

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    Abstract: No abstract text available
    Text: SMD Type Product specification KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB3632 FDB3632) O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB3652 FDB3652) O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KDB2572 FDB2572 Features TO-263 Unit: mm (Typ.), VGS = 10V, ID = 9A +0.1 1.27-0.1 rDS(ON) = 45m Qg(tot) = 26nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 Low Miller Charge 5.60 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1


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    KDB2572 FDB2572) O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB3682 FDB3682) O-263 PDF

    31A36

    Abstract: KRF7494 IC 31A
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7494 Features High frequency DC-DC converters Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating ID 5.2 Continuous Drain Current, VGS @ 10V,TA = 100 ID 3.7 Pulsed Drain Current*1 IDM 42 PD 3 Continuous Drain Current, VGS @ 10V,Ta = 25


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    KRF7494 31A36 KRF7494 IC 31A PDF

    FDB2552

    Abstract: KDB2552
    Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2552 FDB2552 Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2


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    KDB2552 FDB2552) O-263 FDB2552 PDF

    kds9

    Abstract: TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET
    Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS ON =0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used


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    KDS9952A kds9 TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET PDF

    equivalent smd mosfet

    Abstract: FDB3682 KDB3682
    Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB3682 FDB3682) O-263 equivalent smd mosfet FDB3682 KDB3682 PDF

    FDB3632

    Abstract: KDB3632 84NC mosfet smd
    Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB3632 FDB3632) O-263 FDB3632 84NC mosfet smd PDF

    elna 100uF

    Abstract: RVJ-50V101MH10-R elna 100uF 16v elna 100uf 10v RVJ-35V101MH10-R RVJ-35V221MH10-R elna 50v, 100uF ELNA 25v 47uf RVJ-10V221MG10-R RVJ-10V471MH10-R
    Text: 2002-01-15 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 67-315-25 Ellytkond SMD 330uF/6V 67-316-16 Ellytkond SMD 100uF/10V 67-316-24 Ellytkond SMD 220uF/10V 67-317-49 Ellytkond SMD 470uF/16V


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    330uF/6V 100uF/10V 220uF/10V 470uF/16V 100uF/25V 330uF/25V 220uF/35V 47uF/50V 100uF/50V RVJ-63V470MH10-R elna 100uF RVJ-50V101MH10-R elna 100uF 16v elna 100uf 10v RVJ-35V101MH10-R RVJ-35V221MH10-R elna 50v, 100uF ELNA 25v 47uf RVJ-10V221MG10-R RVJ-10V471MH10-R PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB3652 FDB3652) O-263 PDF

    smd transistor g1

    Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
    Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) < 21mΩ (VGS = 10V) ● RDS(ON) < 24mΩ (VGS = 4.5V) ● RDS(ON) < 32mΩ (VGS = 2.5V)


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    KO8822 00A/s smd transistor g1 g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KDB2552 FDB2552 Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


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    KDB2552 FDB2552) O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel MOSFET KX7N10L SOT-223 ● V DS V = 100V Unit: mm +0.2 3.50-0.2 +0.2 -0.2 0.1max +0.05 0.90-0.05 6.50 ● ID = 1.7 A (V GS = 10V) ● RDS(ON) < 350mΩ (VG S = 10V), ID=0.85A +0.1 3.00-0.1 +0.15 1.65-0.15 • Features +0.2 0.90-0.2


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    KX7N10L PDF